US5403778A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Limited metal reaction for contact cleaning and improved metal-to-metal antifuse contact cleaning method
Assignee: Texas Instruments Inc
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Filing: 1994-01-06
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Granted: 1995-04-04
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Expires: 2014-01-06
Abstract
Abstract An antifuse contact (30) cleaning method and the resulting antifuse (10) uses limited-reaction Ti/α-Si contact cleaning. The method includes the steps of placing a limited-reaction metal such as Ti (22, 24, 34) at the interface of a metal (20)/α-Si (32)/metal (36) antifuse contact (30). The method is to react the thin reaction metal (22, 24, 34) at a temperature of less than approximately 450° C. to remove the native interface layer of the metal (20)/α-Si (32)/metal (36) antifuse to, thereby, clean the metal (20)/α-Si (32)/metal (36) antifuse contact (30).
Inventors
- 👤 Siang P. Kwok
- 👤 Shoue-Jen Wang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/01; H10W20/031; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
53 words
A method for cleaning metal/α-Si/metal antifuse contacts, comprising the steps of: placing a reaction metal at the interface of a metal/α-Si/metal antifuse contact; reacting the reaction metal at a temperature of less than approximately 450° C. to remove the native interface layer of the metal/α-Si/metal antifuse to, thereby, clean the metal/α-Si/metal antifuse contact.
Claim 2
Independent Claim
53 words
A method for cleaning metal/α-Si/metal antifuse contacts, comprising the steps of: placing a reaction metal at the interface of a metal/α-Si/metal antifuse contact; reacting the reaction metal at a temperature of less than approximately 450° C. to remove the native interface layer of the metal/α-Si/metal antifuse to, thereby, clean the metal/α-Si/metal antifuse contact.
Claim 3
Dependent Claim
26 words
The method of claim 1, wherein said placing step further comprises the step of placing a Ti layer at the interface of said metal/α-Si/metal antifuse contact.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein said reacting step comprises the step of reacting a Ti layer with the native interface layer.
Claim 5
Dependent Claim
17 words
The method of claim 1, further comprising the step of forming a via over said antifuse contact.
Claim 6
Dependent Claim
18 words
The method of claim 1, further comprising the step of associating said metal/α-Si/metal antifuse contact with an antifuse.
Claim 7
Dependent Claim
20 words
The method of claim 1, further comprising the step of associating said cleaned metal/α-Si/metal antifuse with a user-programmable integrated circuit.
Claim 8
Dependent Claim
21 words
The method of claim 1, further comprising the step of associating said cleaned metal/α-Si/metal antifuse with a field programmable gate array.
Claim 9
Independent Claim
83 words
A method of forming a user-programmable integrated circuit, comprising the steps of: forming an antifuse for a user-programmable integrated circuit; forming a metal/α-Si/metal antifuse contact for association with the antifuse, including the step of cleaning the antifuse contact by placing a reaction metal at a metal/α-Si interface of the metal/α-Si/metal antifuse contact; reacting the reaction metal at a temperature of less than approximately 450° C. to remove the native interface layer of the metal/α-Si/metal antifuse contact, and thereby, clean the metal/α-Si/metal antifuse contact.
Claim 10
Independent Claim
83 words
A method of forming a user-programmable integrated circuit, comprising the steps of: forming an antifuse for a user-programmable integrated circuit; forming a metal/α-Si/metal antifuse contact for association with the antifuse, including the step of cleaning the antifuse contact by placing a reaction metal at a metal/α-Si interface of the metal/α-Si/metal antifuse contact; reacting the reaction metal at a temperature of less than approximately 450° C. to remove the native interface layer of the metal/α-Si/metal antifuse contact, and thereby, clean the metal/α-Si/metal antifuse contact.
Claim 11
Dependent Claim
19 words
The method of claim 8, further comprising the step of forming said antifuse from layers of AlSiCu and TiW.
Claim 12
Dependent Claim
21 words
The method of claim 8, further comprising the step of fabricating said user-programmable gate array as a field programmable gate array.
Claim 13
Dependent Claim
38 words
The method of claim 8, further comprising the step of cleaning the metal/α-Si/metal antifuse contact by placing a TI layer at the interface of said metal/α-Si/metal antifuse contact and reacting the Ti layer with the native interface layer.
Claim 14
Dependent Claim
19 words
The method of claim 8, further comprising the step of forming said metal/α-Si/metal antifuse contact of TiW and α-Si.
Claim 15
Dependent Claim
18 words
The method of claim 8, further comprising the step of placing the metal/α-Si/metal antifuse contact over the antifuse.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |