US7414288B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having display device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2005-10-21
•
Granted: 2008-08-19
•
Expires: 2025-10-21
Abstract
Abstract A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).
Inventors
- 👤 Hisashi Ohtani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:38
CPC Classifications
H; H10; H10D; H10D86/00; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/673; H10D30/6737; H10D30/6739; H10D86/40; H10D86/431; H10D86/441; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454
Claims Analysis
Total Claims: 52
Claim 1
Independent Claim
187 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode; and a pixel electrode formed over said third insulating film wherein said pixel electrode is electrically connected to the semiconductor layer, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film.
Claim 2
Dependent Claim
187 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode; and a pixel electrode formed over said third insulating film wherein said pixel electrode is electrically connected to the semiconductor layer, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film.
Claim 3
Dependent Claim
266 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode, said third insulating film having at least one contact hole; at least one of source and drain electrodes formed over said third insulating film; and a pixel electrode formed over said third insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode, wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said one of the source and drain electrodes is electrically connected to one of said pair of impurity regions through the contact hole, and wherein said one of the source and drain electrodes is not in direct contact with the second insulating film.
Claim 4
Dependent Claim
266 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode, said third insulating film having at least one contact hole; at least one of source and drain electrodes formed over said third insulating film; and a pixel electrode formed over said third insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode, wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said one of the source and drain electrodes is electrically connected to one of said pair of impurity regions through the contact hole, and wherein said one of the source and drain electrodes is not in direct contact with the second insulating film.
Claim 5
Dependent Claim
212 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode; and a pixel electrode formed over said third insulating film wherein said pixel electrode is electrically connected to the semiconductor layer, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of the gate electrode and side surfaces of the gate electrode.
Claim 6
Dependent Claim
212 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode; and a pixel electrode formed over said third insulating film wherein said pixel electrode is electrically connected to the semiconductor layer, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of the gate electrode and side surfaces of the gate electrode.
Claim 7
Dependent Claim
224 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and at least one lightly doped impurity region between the channel region and one of the pair of impurity regions; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode; and a pixel electrode formed over said third insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, wherein said second insulating film overlaps said lightly doped impurity region.
Claim 8
Dependent Claim
224 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and at least one lightly doped impurity region between the channel region and one of the pair of impurity regions; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode; and a pixel electrode formed over said third insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, wherein said second insulating film overlaps said lightly doped impurity region.
Claim 9
Dependent Claim
291 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode, said third insulating film having at least one contact hole; at least one of source and drain electrodes formed over said third insulating film, wherein said second insulating film extends beyond edges of the gate electrode; and a pixel electrode formed over said third insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said one of the source and drain electrodes is electrically connected to one of said pair of impurity regions through the contact hole, and wherein said one of the source and drain electrodes is not in direct contact with the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of the gate electrode and side surfaces of the gate electrode.
Claim 10
Dependent Claim
291 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode, said third insulating film having at least one contact hole; at least one of source and drain electrodes formed over said third insulating film, wherein said second insulating film extends beyond edges of the gate electrode; and a pixel electrode formed over said third insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said one of the source and drain electrodes is electrically connected to one of said pair of impurity regions through the contact hole, and wherein said one of the source and drain electrodes is not in direct contact with the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of the gate electrode and side surfaces of the gate electrode.
Claim 11
Dependent Claim
210 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating fihns and the gate electrode; a fourth insulating film formed over said third insulating film comprises an organic resin; a pixel electrode formed over said fourth insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film.
Claim 12
Dependent Claim
210 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating fihns and the gate electrode; a fourth insulating film formed over said third insulating film comprises an organic resin; a pixel electrode formed over said fourth insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film.
Claim 13
Dependent Claim
279 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode, said third insulating film having at least one contact hole, at least one of source and drain electrodes formed over said third insulating film; a fourth insulating film formed over said third insulating film comprises an organic resin; a pixel electrode formed over said fourth insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said one of the source and drain electrodes is electrically connected to one of said pair of impurity regions though the contact hole, and wherein said one of the source and drain electrodes is not in direct contact with the second insulating film.
Claim 14
Dependent Claim
279 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode, said third insulating film having at least one contact hole, at least one of source and drain electrodes formed over said third insulating film; a fourth insulating film formed over said third insulating film comprises an organic resin; a pixel electrode formed over said fourth insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said one of the source and drain electrodes is electrically connected to one of said pair of impurity regions though the contact hole, and wherein said one of the source and drain electrodes is not in direct contact with the second insulating film.
Claim 15
Dependent Claim
235 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode; a fourth insulating film formed over said third insulating film comprises an organic resin; a pixel electrode formed over said fourth insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of the gate electrode and side surfaces of the gate electrode.
Claim 16
Dependent Claim
235 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode; a fourth insulating film formed over said third insulating film comprises an organic resin; a pixel electrode formed over said fourth insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode; wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of the gate electrode and side surfaces of the gate electrode.
Claim 17
Dependent Claim
237 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and at least one lightly doped impurity region between the channel region and one of the pair of impurity regions; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode; a fourth insulating film formed over said third insulating film comprises an organic resin; a pixel electrode formed over said fourth insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode, wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, wherein said second insulating film overlaps said lightly doped impurity region.
Claim 18
Dependent Claim
237 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and at least one lightly doped impurity region between the channel region and one of the pair of impurity regions; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode; a fourth insulating film formed over said third insulating film comprises an organic resin; a pixel electrode formed over said fourth insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode, wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, wherein said second insulating film overlaps said lightly doped impurity region.
Claim 19
Dependent Claim
304 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode, said third insulating film having at least one contact hole; at least one of source and drain electrodes formed over said third insulating film; a fourth insulating film formed over said third insulating film comprises an organic resin; a pixel electrode formed over said fourth insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode, wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said one of the source and drain electrodes is electrically connected to one of said pair of impurity regions through the contact hole, and wherein said one of the source and drain electrodes is not in direct contact with the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of the gate electrode and side surfaces of the gate electrode.
Claim 20
Dependent Claim
304 words
A semiconductor device comprising at least a display device, said display device comprising: a substrate having an insulating surface; a semiconductor layer over the substrate, said semiconductor layer including at least a pair of impurity regions and a channel region; a first insulating film comprising silicon oxide formed over the semiconductor layer; a second insulating film comprising silicon nitride formed over the first insulating film; a gate electrode located over the channel region of the semiconductor layer with the first insulating film and the second insulating film interposed therebetween; a third insulating film comprising silicon nitride formed over the semiconductor layer, the first and second insulating films and the gate electrode, said third insulating film having at least one contact hole; at least one of source and drain electrodes formed over said third insulating film; a fourth insulating film formed over said third insulating film comprises an organic resin; a pixel electrode formed over said fourth insulating film wherein said pixel electrode is electrically connected to one of said pair of impurity regions, wherein said second insulating film extends beyond edges of the gate electrode, wherein said first insulating film extends beyond edges of the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of an extending portion of the first insulating film and an upper surface of an extending portion of the second insulating film, and wherein said one of the source and drain electrodes is electrically connected to one of said pair of impurity regions through the contact hole, and wherein said one of the source and drain electrodes is not in direct contact with the second insulating film, and wherein said third insulating film is in direct contact with an upper surface of the gate electrode and side surfaces of the gate electrode.
Claim 21
Dependent Claim
32 words
A semiconductor device according to any one of claim 1 , further comprising a fourth insulating film formed over said third insulating film, wherein said fourth insulating film comprises an organic resin.
Claim 22
Dependent Claim
32 words
A semiconductor device according to any one of claim 2 , further comprising a fourth insulating film formed over said third insulating film, wherein said fourth insulating film comprises an organic resin.
Claim 23
Dependent Claim
32 words
A semiconductor device according to any one of claim 3 , further comprising a fourth insulating film formed over said third insulating film, wherein said fourth insulating film comprises an organic resin.
Claim 24
Dependent Claim
32 words
A semiconductor device according to any one of claim 4 , further comprising a fourth insulating film formed over said third insulating film, wherein said fourth insulating film comprises an organic resin.
Claim 25
Dependent Claim
32 words
A semiconductor device according to any one of claim 5 , further comprising a fourth insulating film formed over said third insulating film, wherein said fourth insulating film comprises an organic resin.
Claim 26
Dependent Claim
42 words
A semiconductor device according to claim 1 , wherein said semiconductor layer includes a pair of impurity regions, wherein said semiconductor layer includes at least one lightly doped impurity region between the channel region and one of the pair of impurity regions.
Claim 27
Dependent Claim
37 words
A semiconductor device according to any one of claim 2 , wherein said second insulating film at least partly overlaps one lightly doped impurity region between the channel region and one of the pair of impurity regions.
Claim 28
Dependent Claim
37 words
A semiconductor device according to any one of claim 3 , wherein said second insulating film at least partly overlaps one lightly doped impurity region between the channel region and one of the pair of impurity regions.
Claim 29
Dependent Claim
37 words
A semiconductor device according to any one of claim 5 , wherein said second insulating film at least partly overlaps one lightly doped impurity region between the channel region and one of the pair of impurity regions.
Claim 30
Dependent Claim
37 words
A semiconductor device according to any one of claim 7 , wherein said second insulating film at least partly overlaps one lightly doped impurity region between the channel region and one of the pair of impurity regions.
Claim 31
Dependent Claim
37 words
A semiconductor device according to any one of claim 8 , wherein said second insulating film at least partly overlaps one lightly doped impurity region between the channel region and one of the pair of impurity regions.
Claim 32
Dependent Claim
37 words
A semiconductor device according to any one of claim 10 , wherein said second insulating film at least partly overlaps one lightly doped impurity region between the channel region and one of the pair of impurity regions.
Claim 33
Dependent Claim
22 words
A semiconductor device according to any one of claim 1 , wherein said display comprises a driving circuit formed over said substrate.
Claim 34
Dependent Claim
22 words
A semiconductor device according to any one of claim 2 , wherein said display comprises a driving circuit formed over said substrate.
Claim 35
Dependent Claim
22 words
A semiconductor device according to any one of claim 3 , wherein said display comprises a driving circuit formed over said substrate.
Claim 36
Dependent Claim
22 words
A semiconductor device according to any one of claim 4 , wherein said display comprises a driving circuit formed over said substrate.
Claim 37
Dependent Claim
22 words
A semiconductor device according to any one of claim 5 , wherein said display comprises a driving circuit formed over said substrate.
Claim 38
Dependent Claim
22 words
A semiconductor device according to any one of claim 6 , wherein said display comprises a driving circuit formed over said substrate.
Claim 39
Dependent Claim
22 words
A semiconductor device according to any one of claim 7 , wherein said display comprises a driving circuit formed over said substrate.
Claim 40
Dependent Claim
22 words
A semiconductor device according to any one of claim 8 , wherein said display comprises a driving circuit formed over said substrate.
Claim 41
Dependent Claim
22 words
A semiconductor device according to any one of claim 9 , wherein said display comprises a driving circuit formed over said substrate.
Claim 42
Dependent Claim
22 words
A semiconductor device according to any one of claim 10 , wherein said display comprises a driving circuit formed over said substrate.
Claim 43
Dependent Claim
33 words
A semiconductor device according to any one of claim 1 , wherein said semiconductor device is one selected a group consisting of: video movie, digital camera, car navigation system, personal computer and projector.
Claim 44
Dependent Claim
33 words
A semiconductor device according to any one of claim 2 , wherein said semiconductor device is one selected a group consisting of: video movie, digital camera, car navigation system, personal computer and projector.
Claim 45
Dependent Claim
33 words
A semiconductor device according to any one of claim 3 , wherein said semiconductor device is one selected a group consisting of: video movie, digital camera, car navigation system, personal computer and projector.
Claim 46
Dependent Claim
33 words
A semiconductor device according to any one of claim 4 , wherein said semiconductor device is one selected a group consisting of: video movie, digital camera, car navigation system, personal computer and projector.
Claim 47
Dependent Claim
33 words
A semiconductor device according to any one of claim 5 , wherein said semiconductor device is one selected a group consisting of: video movie, digital camera, car navigation system, personal computer and projector.
Claim 48
Dependent Claim
33 words
A semiconductor device according to any one of claim 6 , wherein said semiconductor device is one selected a group consisting of: video movie, digital camera, car navigation system, personal computer and projector.
Claim 49
Dependent Claim
33 words
A semiconductor device according to any one of claim 7 , wherein said semiconductor device is one selected a group consisting of: video movie, digital camera, car navigation system, personal computer and projector.
Claim 50
Dependent Claim
33 words
A semiconductor device according to any one of claim 8 , wherein said semiconductor device is one selected a group consisting of: video movie, digital camera, car navigation system, personal computer and projector.
Claim 51
Dependent Claim
33 words
A semiconductor device according to any one of claim 9 , wherein said semiconductor device is one selected a group consisting of: video movie, digital camera, car navigation system, personal computer and projector.
Claim 52
Dependent Claim
33 words
A semiconductor device according to any one of claim 10 , wherein said semiconductor device is one selected a group consisting of: video movie, digital camera, car navigation system, personal computer and projector.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2011-08-19 | 2012-02-18 | 2012-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2015-08-19 | 2016-02-18 | 2016-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2019-08-19 | 2020-02-18 | 2020-08-19 | $7700.00 | Window Closed / Lapsed |