US6013928A
Expired / Lapsed
US
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Semiconductor device having interlayer insulating film and method for forming the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1995-06-07
•
Granted: 2000-01-11
•
Expires: 2015-06-07
Abstract
Abstract An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Akira Mase
- 👤 Masaaki Hiroki
- 👤 Yasuhiko Takemura
- 👤 Hongyong Zhang
- 👤 Hideki Uochi
- 👤 Hideki Nemoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:45
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1343; G02F1/134309; G02F1/134363; G02F1/136; G02F1/1362; G02F1/136286; H04; H04N; H04N3/00; H04N3/10; H04N3/12; H04N3/127; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/6737; H10D30/6739; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0135; H10D84/0149; H10D86/421; H10D86/60; G02F1/13624; G02F1/136245; G02F1/1368; G09; G09G; G09G2300/00; G09G2300/08; G09G2300/0809; G09G2300/0823; H10D86/451
Claims Analysis
Total Claims: 87
Claim 1
Independent Claim
186 words
A liquid crystal display device comprising: a pixel electrode; at least one thin film transistor for switching said pixel electrode; a liquid crystal layer adjacent to said pixel electrode, said thin film transistor comprising: a crystalline semiconductor layer formed on an insulating surface; a first pair of impurity regions formed in said crystalline semiconductor layer wherein said first pair of impurity regions are doped with an impurity having one conductivity type at a first concentration; a channel region formed in said crystalline semiconductor layer between said pair of impurity regions; a second pair of impurity regions formed between said first pair of impurity regions and said channel region wherein said second pair of impurity regions are doped with an impurity having said conductivity type at a second concentration smaller than said first concentration; a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; an interlayer insulating film formed over said crystalline semiconductor layer; an organic resin film formed over said interlayer insulating film, said organic resin film having a leveled upper surface; a pixel electrode formed over said organic resin film.
Claim 2
Dependent Claim
186 words
A liquid crystal display device comprising: a pixel electrode; at least one thin film transistor for switching said pixel electrode; a liquid crystal layer adjacent to said pixel electrode, said thin film transistor comprising: a crystalline semiconductor layer formed on an insulating surface; a first pair of impurity regions formed in said crystalline semiconductor layer wherein said first pair of impurity regions are doped with an impurity having one conductivity type at a first concentration; a channel region formed in said crystalline semiconductor layer between said pair of impurity regions; a second pair of impurity regions formed between said first pair of impurity regions and said channel region wherein said second pair of impurity regions are doped with an impurity having said conductivity type at a second concentration smaller than said first concentration; a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; an interlayer insulating film formed over said crystalline semiconductor layer; an organic resin film formed over said interlayer insulating film, said organic resin film having a leveled upper surface; a pixel electrode formed over said organic resin film.
Claim 3
Dependent Claim
25 words
A device according to claim 1 wherein said second pair of impurity regions have a same conductivity type as said first pair of impurity regions.
Claim 4
Dependent Claim
33 words
A device according to claim 1 wherein said crystalline semiconductor layer has a hole mobility not lower than 10 cm 2 /Vsec or an electron mobility not lower than 15 cm 2 /Vsec.
Claim 5
Dependent Claim
25 words
A device according to claim 1 wherein said gate electrode comprises a material selected from the group consisting of Ti, Al, Ta, Cr and Si.
Claim 6
Dependent Claim
14 words
A device according to claim 1 wherein said interlayer insulating film comprises silicon oxide.
Claim 7
Dependent Claim
12 words
A device according to claim 1 wherein said pixel electrode is transparent.
Claim 8
Dependent Claim
22 words
A device according to claim 1 wherein said interlayer insulating film has a thickness within a range from 0.2 to 0.6 μm.
Claim 9
Dependent Claim
16 words
A device according to claim 1 wherein said thin film transistor is a top-gate type transistor.
Claim 10
Dependent Claim
152 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a larger band gap than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a planarizing film comprising an organic resin formed over said interlayer insulating film; and a pixel electrode formed over said planarizing film and electrically connected to said thin film transistor through a hole of said planarizing film.
Claim 11
Dependent Claim
152 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a larger band gap than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a planarizing film comprising an organic resin formed over said interlayer insulating film; and a pixel electrode formed over said planarizing film and electrically connected to said thin film transistor through a hole of said planarizing film.
Claim 12
Dependent Claim
151 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a lower crystallinity than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a planarizing film comprising an organic resin formed over said interlayer insulating film; and a pixel electrode formed over said planarizing film and electrically connected to said thin film transistor through a hole of said planarizing film.
Claim 13
Dependent Claim
151 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a lower crystallinity than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a planarizing film comprising an organic resin formed over said interlayer insulating film; and a pixel electrode formed over said planarizing film and electrically connected to said thin film transistor through a hole of said planarizing film.
Claim 14
Dependent Claim
205 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions contain a dopant impurity at a lower concentration than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said second contact hole does not overlap said first contact hole.
Claim 15
Dependent Claim
205 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions contain a dopant impurity at a lower concentration than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said second contact hole does not overlap said first contact hole.
Claim 16
Dependent Claim
12 words
A device according to claim 11 wherein said conductive layer comprises aluminum.
Claim 17
Dependent Claim
17 words
A device according to claim 11 wherein said gate electrode is located over said channel forming region.
Claim 18
Dependent Claim
14 words
A device according to claim 11 wherein said interlayer insulating film comprises silicon oxide.
Claim 19
Dependent Claim
12 words
A device according to claim 11 wherein said planarizing film comprises polyimide.
Claim 20
Dependent Claim
33 words
A device according to claim 11 wherein said crystalline semiconductor layer has a hole mobility not lower than 10 cm 2 /Vsec or an electron mobility not lower than 15 cm 2 /Vsec.
Claim 21
Dependent Claim
25 words
A device according to claim 11 wherein said gate electrode comprises a material selected from the group consisting of Ti, Al, Ta, Cr and Si.
Claim 22
Dependent Claim
12 words
A device according to claim 11 wherein said pixel electrode is transparent.
Claim 23
Dependent Claim
22 words
A device according to claim 11 wherein said interlayer insulating film has a thickness within a range from 0.2 to 0.6 μm.
Claim 24
Dependent Claim
202 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a larger band gap than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said second contact hole does not overlap said first contact hole.
Claim 25
Dependent Claim
202 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a larger band gap than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said second contact hole does not overlap said first contact hole.
Claim 26
Dependent Claim
201 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a lower crystallinity than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said second contact hole does not overlap said first contact hole.
Claim 27
Dependent Claim
201 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a lower crystallinity than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said second contact hole does not overlap said first contact hole.
Claim 28
Dependent Claim
216 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions contain a dopant impurity at a lower concentration than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said conductive layer has an extended portion which extends from said first contact hole and said pixel electrode contacts said extended portion.
Claim 29
Dependent Claim
216 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions contain a dopant impurity at a lower concentration than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said conductive layer has an extended portion which extends from said first contact hole and said pixel electrode contacts said extended portion.
Claim 30
Dependent Claim
12 words
A device according to claim 22 wherein said conductive layer comprises aluminum.
Claim 31
Dependent Claim
17 words
A device according to claim 22 wherein said gate electrode is located over said channel forming region.
Claim 32
Dependent Claim
14 words
A device according to claim 22 wherein said interlayer insulating film comprises silicon oxide.
Claim 33
Dependent Claim
12 words
A device according to claim 22 wherein said planarizing film comprises polyimide.
Claim 34
Dependent Claim
33 words
A device according to claim 22 wherein said crystalline semiconductor layer has a hole mobility not lower than 10 cm 2 /Vsec or an electron mobility not lower than 15 cm 2 /Vsec.
Claim 35
Dependent Claim
12 words
A device according to claim 22 wherein said pixel electrode is transparent.
Claim 36
Dependent Claim
22 words
A device according to claim 22 wherein said interlayer insulating film has a thickness within a range from 0.2 to 0.6 μm.
Claim 37
Dependent Claim
213 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a larger band gap than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said conductive layer has an extended portion which extends from said first contact hole and said pixel electrode contacts said extended portion.
Claim 38
Dependent Claim
213 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a larger band gap than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said conductive layer has an extended portion which extends from said first contact hole and said pixel electrode contacts said extended portion.
Claim 39
Dependent Claim
212 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a lower crystallinity than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said conductive layer has an extended portion which extends from said first contact hole and said pixel electrode contacts said extended portion.
Claim 40
Dependent Claim
212 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a lower crystallinity than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said conductive layer has an extended portion which extends from said first contact hole and said pixel electrode contacts said extended portion.
Claim 41
Dependent Claim
168 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said second contact hole does not overlap said first contact hole.
Claim 42
Dependent Claim
168 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said second contact hole does not overlap said first contact hole.
Claim 43
Dependent Claim
12 words
A device according to claim 32 wherein said conductive layer comprises aluminum.
Claim 44
Dependent Claim
17 words
A device according to claim 32 wherein said gate electrode is located over said channel forming region.
Claim 45
Dependent Claim
14 words
A device according to claim 32 wherein said interlayer insulating film comprises silicon oxide.
Claim 46
Dependent Claim
12 words
A device according to claim 32 wherein said planarizing film comprises polyimide.
Claim 47
Dependent Claim
33 words
A device according to claim 32 wherein said crystalline semiconductor layer has a hole mobility not lower than 10 cm 2 /Vsec or an electron mobility not lower than 15 cm 2 /Vsec.
Claim 48
Dependent Claim
25 words
A device according to claim 32 wherein said gate electrode comprises a material selected from the group consisting of Ti, Al, Ta, Cr and Si.
Claim 49
Dependent Claim
12 words
A device according to claim 32 wherein said pixel electrode is transparent.
Claim 50
Dependent Claim
22 words
A device according to claim 32 wherein said interlayer insulating film has a thickness within a range from 0.2 to 0.6 μm.
Claim 51
Dependent Claim
179 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said conductive layer has an extended portion which extends from said first contact hole and said pixel electrode contacts said extended portion.
Claim 52
Dependent Claim
179 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said conductive layer has an extended portion which extends from said first contact hole and said pixel electrode contacts said extended portion.
Claim 53
Dependent Claim
12 words
A device according to claim 41 wherein said conductive layer comprises aluminum.
Claim 54
Dependent Claim
17 words
A device according to claim 41 wherein said gate electrode is located over said channel forming region.
Claim 55
Dependent Claim
14 words
A device according to claim 41 wherein said interlayer insulating film comprises silicon oxide.
Claim 56
Dependent Claim
12 words
A device according to claim 41 wherein said planarizing film comprises polyimide.
Claim 57
Dependent Claim
33 words
A device according to claim 41 wherein said crystalline semiconductor layer has a hole mobility not lower than 10 cm 2 /Vsec or an electron mobility not lower than 15 cm 2 /Vsec.
Claim 58
Dependent Claim
12 words
A device according to claim 41 wherein said pixel electrode is transparent.
Claim 59
Dependent Claim
22 words
A device according to claim 41 wherein said interlayer insulating film has a thickness within a range from 0.2 to 0.6 μm.
Claim 60
Dependent Claim
214 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions contain a dopant impurity at a lower concentration than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said channel forming region is doped with boron at a concentration of 1×10 15 to 1×10 18 atoms/cm 3 .
Claim 61
Dependent Claim
214 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions contain a dopant impurity at a lower concentration than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said channel forming region is doped with boron at a concentration of 1×10 15 to 1×10 18 atoms/cm 3 .
Claim 62
Dependent Claim
12 words
A device according to claim 49 wherein said conductive layer comprises aluminum.
Claim 63
Dependent Claim
17 words
A device according to claim 49 wherein said gate electrode is located over said channel forming region.
Claim 64
Dependent Claim
14 words
A device according to claim 49 wherein said interlayer insulating film comprises silicon oxide.
Claim 65
Dependent Claim
12 words
A device according to claim 49 wherein said planarizing film comprises polyimide.
Claim 66
Dependent Claim
33 words
A device according to claim 49 wherein said crystalline semiconductor layer has a hole mobility not lower than 10 cm 2 /Vsec or an electron mobility not lower than 15 cm 2 /Vsec.
Claim 67
Dependent Claim
25 words
A device according to claim 49 wherein said gate electrode comprises a material selected from the group consisting of Ti, Al, Ta, Cr and Si.
Claim 68
Dependent Claim
12 words
A device according to claim 49 wherein said pixel electrode is transparent.
Claim 69
Dependent Claim
22 words
A device according to claim 49 wherein said interlayer insulating film has a thickness within a range from 0.2 to 0.6 μm.
Claim 70
Dependent Claim
211 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a larger band gap than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said channel forming region is doped with boron at a concentration of 1×10 15 to 1×10 18 atoms/cm 3 .
Claim 71
Dependent Claim
211 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a larger band gap than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said channel forming region is doped with boron at a concentration of 1×10 15 to 1×10 18 atoms/cm 3 .
Claim 72
Dependent Claim
210 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a lower crystallinity than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said channel forming region is doped with boron at a concentration of 1×10 15 to 1×10 18 atoms/cm 3 .
Claim 73
Dependent Claim
210 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a lower crystallinity than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said channel forming region is doped with boron at a concentration of 1×10 15 to 1×10 18 atoms/cm 3 .
Claim 74
Dependent Claim
213 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions contain a dopant impurity at a lower concentration than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said semiconductor island exhibits a peak of Raman spectroscopy shifted toward lower frequency side from 522 cm -1 .
Claim 75
Dependent Claim
213 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions contain a dopant impurity at a lower concentration than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said semiconductor island exhibits a peak of Raman spectroscopy shifted toward lower frequency side from 522 cm -1 .
Claim 76
Dependent Claim
12 words
A device according to claim 60 wherein said conductive layer comprises aluminum.
Claim 77
Dependent Claim
17 words
A device according to claim 60 wherein said gate electrode is located over said channel forming region.
Claim 78
Dependent Claim
14 words
A device according to claim 60 wherein said interlayer insulating film comprises silicon oxide.
Claim 79
Dependent Claim
12 words
A device according to claim 60 wherein said planarizing film comprises polyimide.
Claim 80
Dependent Claim
33 words
A device according to claim 60 wherein said crystalline semiconductor layer has a hole mobility not lower than 10 cm 2 /Vsec or an electron mobility not lower than 15 cm 2 /Vsec.
Claim 81
Dependent Claim
25 words
A device according to claim 60 wherein said gate electrode comprises a material selected from the group consisting of Ti, Al, Ta, Cr and Si.
Claim 82
Dependent Claim
12 words
A device according to claim 60 wherein said pixel electrode is transparent.
Claim 83
Dependent Claim
22 words
A device according to claim 60 wherein said interlayer insulating film has a thickness within a range from 0.2 to 0.6 μm.
Claim 84
Dependent Claim
210 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a larger band gap than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said semiconductor island exhibits a peak of Raman spectroscopy shifted toward lower frequency side from 522 cm -1 .
Claim 85
Dependent Claim
210 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a larger band gap than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said semiconductor island exhibits a peak of Raman spectroscopy shifted toward lower frequency side from 522 cm -1 .
Claim 86
Dependent Claim
209 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a lower crystallinity than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said semiconductor island exhibits a peak of Raman spectroscopy shifted toward lower frequency side from 522 cm -1 .
Claim 87
Dependent Claim
209 words
An active matrix device comprising: a substrate having an insulating surface; a thin film transistor formed over said substrate wherein said thin film transistor comprises: a semiconductor island comprising crystalline silicon; a channel forming region in said semiconductor island; source and drain regions formed in said semiconductor island with said channel forming region interposed therebetween; a pair of impurity regions disposed between said source and drain regions and said channel forming region wherein said pair of impurity regions have a lower crystallinity than said source and drain regions; and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; an interlayer insulating film covering said thin film transistor; a conductive layer formed on said interlayer insulating film and connected to one of the source or drain regions of said thin film transistor through a first contact hole of said interlayer insulating film; a planarizing film comprising an organic resin formed over said interlayer insulating film and said conductive layer; and a pixel electrode formed over said planarizing film and connected to said conductive layer through a second contact hole of said planarizing film, wherein said semiconductor island exhibits a peak of Raman spectroscopy shifted toward lower frequency side from 522 cm -1 .
References Cited (Backward Citations)
JPS4977537A
Cited
US4068020A
Cited
US4103297A
Cited
JPS53144297A
Cited
JPS5532026A
Cited
US4239346A
Cited
US4378417A
Cited
US4365013A
Cited
US4420870A
Cited
US4646426A
Cited
JPS582073A
Cited
JPS5823478A
Cited
JPS5823479A
Cited
US4468855A
Cited
JPS5827365A
Cited
JPS58105574A
Cited
JPS58106861A
Cited
JPS58115864A
Cited
US4528480A
Cited
JPS58118154A
Cited
US4969031A
Cited
US4680580A
Cited
JPS58164268A
Cited
JPS5921067A
Cited
US4591892A
Cited
US4740829A
Cited
US5077223A
Cited
US4862237A
Cited
JPS6047574A
Cited
US4860069A
Cited
EP0161555A2
Cited
US5543636A
Cited
US5315132A
Cited
US4959700A
Cited
JPS60245174A
Cited
US4727044A
Cited
JPS60245173A
Cited
US5142344A
Cited
US5313077A
Cited
US4818077A
Cited
JPS61136263A
Cited
JPS61141174A
Cited
US4986213A
Cited
US4888305A
Cited
US4597160A
Cited
JPS6273658A
Cited
JPS6273660A
Cited
JPS62126677A
Cited
US4755865A
Cited
JPS62193277A
Cited
JPS62214669A
Cited
JPS639978A
Cited
JPS6366969A
Cited
JPS6370832A
Cited
JPS6396636A
Cited
JPS63100777A
Cited
JPS63119578A
Cited
JPS63178560A
Cited
US4969025A
Cited
JPS63219152A
Cited
US5132754A
Cited
JPS6430272A
Cited
US4891330A
Cited
US5012228A
Cited
US4938565A
Cited
JPS6468724A
Cited
US5003356A
Cited
JPS6468728A
Cited
US5055899A
Cited
JPS6489464A
Cited
JPH01130131A
Cited
US4897360A
Cited
JPH01156725A
Cited
EP0321073A2
Cited
US4949141A
Cited
JPH01274117A
Cited
US5250931A
Cited
US4905066A
Cited
US5245452A
Cited
US5023679A
Cited
JPH0227320A
Cited
JPH0251129A
Cited
JPH0290683A
Cited
US5084905A
Cited
US5051570A
Cited
EP0412701A2
Cited
US5132821A
Cited
US5056895A
Cited
US5235195A
Cited
US5302845A
Cited
US5744818A
Cited
US5495353A
Cited
US5612799A
Cited
US5521107A
Cited
US5250818A
Cited
US5289030A
Cited
US5327901A
Cited
US5308998A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-10 | 2003-07-12 | 2004-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-10 | 2007-07-12 | 2008-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-10 | 2011-07-12 | 2012-01-11 | $7700.00 | Window Closed / Lapsed |