US6835607B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and a method for manufacturing the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2001-12-28
•
Granted: 2004-12-28
•
Expires: 2021-12-28
Abstract
Abstract A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
Inventors
- 👤 Yasuhiko Takemura
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:44
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6755; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/601; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6757; H10D64/00; H10D64/01; H10D64/025; H10D64/027; H10D86/00; H10D86/40; H10D86/451; H10D86/481; H10D86/60; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P95/00; H10P95/90; H10D30/6721
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
184 words
A method for forming a semiconductor device comprising: forming a semiconductor film over a substrate; forming a first insulating film comprising silicon oxide over said semiconductor film; forming a gate electrode over said first insulating film; patterning said first insulating film into a second insulating film comprising silicon oxide; introducing an impurity into said semiconductor film using said gate electrode and said second insulating film as masks to form a source region and a drain region in said semiconductor film outside said second insulating film and to form a high resistivity impurity region under a part of said second insulating film which extends beyond said gate electrode; thinning said part of said second insulating film which extends beyond said gate electrode; forming a third insulating film comprising silicon nitride over at least said part of said second insulating film which extends beyond said gate electrode; and forming a fourth insulating film comprising silicon oxide over said third insulating film and over said pert of said second insulating film which extends beyond said gate electrode, wherein said fourth insulating film is formed by using TEOS.
Claim 2
Independent Claim
184 words
A method for forming a semiconductor device comprising: forming a semiconductor film over a substrate; forming a first insulating film comprising silicon oxide over said semiconductor film; forming a gate electrode over said first insulating film; patterning said first insulating film into a second insulating film comprising silicon oxide; introducing an impurity into said semiconductor film using said gate electrode and said second insulating film as masks to form a source region and a drain region in said semiconductor film outside said second insulating film and to form a high resistivity impurity region under a part of said second insulating film which extends beyond said gate electrode; thinning said part of said second insulating film which extends beyond said gate electrode; forming a third insulating film comprising silicon nitride over at least said part of said second insulating film which extends beyond said gate electrode; and forming a fourth insulating film comprising silicon oxide over said third insulating film and over said pert of said second insulating film which extends beyond said gate electrode, wherein said fourth insulating film is formed by using TEOS.
Claim 3
Independent Claim
183 words
A method for forming a semiconductor device comprising: forming a semiconductor film over a substrate; forming a first insulating film comprising silicon oxide over said semiconductor film; forming a gate electrode over said first insulating film; patterning said first insulating film into a second insulating film comprising silicon oxide; introducing an impurity into said semiconductor film using said gate electrode and said second insulating film as masks to form a source region and a drain region in said semiconductor film outside said second insulating film and to form an N − region under a part of said second insulating film which extends beyond said gate electrode; thinning said part of said second insulating film which extends beyond said gate electrode; forming a third insulating film comprising silicon nitride over at least said part of said second insulating film which extends beyond said gate electrode; and forming a fourth insulating film comprising silicon oxide over said third insulating film and over said part of said second insulating film which extends beyond said gate electrode, wherein said fourth insulating film is formed by using TEOS.
Claim 4
Independent Claim
183 words
A method for forming a semiconductor device comprising: forming a semiconductor film over a substrate; forming a first insulating film comprising silicon oxide over said semiconductor film; forming a gate electrode over said first insulating film; patterning said first insulating film into a second insulating film comprising silicon oxide; introducing an impurity into said semiconductor film using said gate electrode and said second insulating film as masks to form a source region and a drain region in said semiconductor film outside said second insulating film and to form an N − region under a part of said second insulating film which extends beyond said gate electrode; thinning said part of said second insulating film which extends beyond said gate electrode; forming a third insulating film comprising silicon nitride over at least said part of said second insulating film which extends beyond said gate electrode; and forming a fourth insulating film comprising silicon oxide over said third insulating film and over said part of said second insulating film which extends beyond said gate electrode, wherein said fourth insulating film is formed by using TEOS.
Claim 5
Independent Claim
174 words
A method for forming a semiconductor, device comprising: forming a semiconductor film over a substrate; forming a first insulating film comprising silicon oxide over said semiconductor film; forming a gate electrode over said first insulating film; patterning said first insulating film into a second insulating film comprising silicon oxide; introducing an impurity into said semiconductor film using said gate electrode and said second insulating film as masks to form a source region and a drain region in said semiconductor film outside said second insulating film and to form a high resistivity impurity region under a pert of said second insulating film which extends beyond said gate electrode; thinning said part of said second insulating film which extends beyond said gate electrode; forming a third insulating film comprising silicon nitride over at least said part of said second insulating film which extends beyond said gate electrode; and forming a fourth insulating film comprising silicon oxide over said third insulating film and over said part of said second insulating film which extends beyond said gate electrode.
Claim 6
Independent Claim
174 words
A method for forming a semiconductor, device comprising: forming a semiconductor film over a substrate; forming a first insulating film comprising silicon oxide over said semiconductor film; forming a gate electrode over said first insulating film; patterning said first insulating film into a second insulating film comprising silicon oxide; introducing an impurity into said semiconductor film using said gate electrode and said second insulating film as masks to form a source region and a drain region in said semiconductor film outside said second insulating film and to form a high resistivity impurity region under a pert of said second insulating film which extends beyond said gate electrode; thinning said part of said second insulating film which extends beyond said gate electrode; forming a third insulating film comprising silicon nitride over at least said part of said second insulating film which extends beyond said gate electrode; and forming a fourth insulating film comprising silicon oxide over said third insulating film and over said part of said second insulating film which extends beyond said gate electrode.
Claim 7
Independent Claim
173 words
A method for forming a semiconductor device comprising: forming a semiconductor film over a substrate; forming a first insulating film comprising silicon oxide over said semiconductor film; forming a gate electrode over said first insulating film; patterning said first insulating film into a second insulating film comprising silicon oxide; introducing an impurity into said semiconductor film using said gate electrode and said second insulating film as masks to form a source region and a drain region in said semiconductor film outside said second insulating film and to form an N − region under a part of said second insulating film which extends beyond said gate electrode; thinning said pert of said second insulating film which extends beyond said gate electrode; forming a third insulating film comprising silicon nitride over at least said part of said second insulating film which extends beyond said gate electrode; and forming a fourth insulating film comprising silicon oxide over said third insulating film and over said part of said second insulating film which extends beyond said gate electrode.
Claim 8
Independent Claim
173 words
A method for forming a semiconductor device comprising: forming a semiconductor film over a substrate; forming a first insulating film comprising silicon oxide over said semiconductor film; forming a gate electrode over said first insulating film; patterning said first insulating film into a second insulating film comprising silicon oxide; introducing an impurity into said semiconductor film using said gate electrode and said second insulating film as masks to form a source region and a drain region in said semiconductor film outside said second insulating film and to form an N − region under a part of said second insulating film which extends beyond said gate electrode; thinning said pert of said second insulating film which extends beyond said gate electrode; forming a third insulating film comprising silicon nitride over at least said part of said second insulating film which extends beyond said gate electrode; and forming a fourth insulating film comprising silicon oxide over said third insulating film and over said part of said second insulating film which extends beyond said gate electrode.
Claim 9
Dependent Claim
43 words
A method according to claim 1 further comprising: forming an anodic oxide film on at least a side of said gate electrode; etching said first insulating film using said gate electrode and said anodic oxide as masks to form said second insulating film.
Claim 10
Dependent Claim
43 words
A method according to claim 2 further comprising: forming an anodic oxide film on at least a side of said gate electrode; etching said first insulating film using said gate electrode and said anodic oxide as masks to form said second insulating film.
Claim 11
Dependent Claim
43 words
A method according to claim 3 further comprising: forming an anodic oxide film on at least a side of said gate electrode; etching said first insulating film using said gate electrode and said anodic oxide as masks to form said second insulating film.
Claim 12
Dependent Claim
43 words
A method according to claim 4 further comprising: forming an anodic oxide film on at least a side of said gate electrode; etching said first insulating film using said gate electrode and said anodic oxide as masks to form said second insulating film.
Claim 13
Dependent Claim
16 words
A method according to claim 1 wherein said third insulating film is formed by plasma CVD.
Claim 14
Dependent Claim
16 words
A method according to claim 2 wherein said third insulating film is formed by plasma CVD.
Claim 15
Dependent Claim
16 words
A method according to claim 3 wherein said third insulating film is formed by plasma CVD.
Claim 16
Dependent Claim
16 words
A method according to claim 4 wherein said third insulating film is formed by plasma CVD.
Claim 17
Dependent Claim
15 words
A method according to claim 1 wherein said semiconductor device is incorporated into a display.
Claim 18
Dependent Claim
15 words
A method according to claim 2 wherein said semiconductor device is incorporated into a display.
Claim 19
Dependent Claim
15 words
A method according to claim 3 wherein said semiconductor device is incorporated into a display.
Claim 20
Dependent Claim
15 words
A method according to claim 4 wherein said semiconductor device is incorporated into a display.
Claim 21
Dependent Claim
17 words
A method according to claim 1 wherein said semiconductor device is incorporated into a liquid crystal display.
Claim 22
Dependent Claim
17 words
A method according to claim 2 wherein said semiconductor device is incorporated into a liquid crystal display.
Claim 23
Dependent Claim
17 words
A method according to claim 3 wherein said semiconductor device is incorporated into a liquid crystal display.
Claim 24
Dependent Claim
17 words
A method according to claim 4 wherein said semiconductor device is incorporated into a liquid crystal display.
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