Method of forming crystal

Claim 2

A crystal forming method which comprises; (a) forming a polycrystalline semiconductor layer on a substrate having an amorphous surface; (b) forming an insulating layer on the polycrystalline semiconductor layer; (c) partially removing the polycrystalline semiconductor layer and the insulating layer to leave a polycrystalline semiconductor region which can become a primary seed to singly aggregate; (d) forming an insulating region at a side portion of the polycrystalline semiconductor region to cover the polycrystalline semiconductor region with an insulating material; (e) removing the insulating layer existing on the polycrystalline semiconductor region; (f) performing a heat treatment for aggregating the polycrystalline semiconductor region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (g) selectively growing monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 3

A crystal forming method according to claim 1, wherein said substrate has at least a surface with a low nucleation density.

Claim 4

A crystal forming method according to claim 2, wherein said surface with a low nucleation density comprises at least an amorphous insulating surface.

Claim 5

A crystal forming method according to claim 1, wherein the temperature of said heat treatment is lower than the melting point of said primary seed.

Claim 6

A crystal forming method according to claim 1, wherein said primary seed is subjected to heat treatment in an atmosphere of hydrogen.

Claim 7

A crystal forming method which comprises: (a) providing a substrate having a recessed portion, the surface of the recessed portion comprising an amorphous material; (b) forming a polycrystalline semiconductor layer on the surface of the recessed portion; (c) partially removing the polycrystalline semiconductor layer to leave a polycrystalline semiconductor region which can become a primary seed to singly aggregate at one angular portion of the recessed portion; (d) performing a heat treatment for aggregating the polycrystalline semiconductor region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (e) selectively growing monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 8

A crystal forming method which comprises: (a) providing a substrate having a recessed portion, the surface of the recessed portion comprising an amorphous material; (b) forming a polycrystalline semiconductor layer on the surface of the recessed portion; (c) partially removing the polycrystalline semiconductor layer to leave a polycrystalline semiconductor region which can become a primary seed to singly aggregate at one angular portion of the recessed portion; (d) performing a heat treatment for aggregating the polycrystalline semiconductor region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (e) selectively growing monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 9

A crystal forming method according to claim 6, wherein said heat treatment of said primary seed is performed in an atmosphere of hydrogen.

Claim 10

A crystal forming method according to claim 6, wherein said plane orientation (100) is vertical to said substrate.

Claim 11

A crystal forming method according to claim 6, wherein said recessed portion is completely filled with said grown monocrystal.

Claim 12

A crystal forming method which comprises: (a) providing a substrate having a recessed portion, the surface of the recessed portion comprising an insulating material; (b) forming a semiconductor material or a metal material region in said recessed portion so that a side wall of said region comes in contact with a side wall of said recessed portion, said region having a sufficient size to become a primary seed to singly aggregate; (c) performing a heat treatment for aggregating said region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (d) selectively growing a monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 13

A crystal forming method which comprises: (a) providing a substrate having a recessed portion, the surface of the recessed portion comprising an insulating material; (b) forming a semiconductor material or a metal material region in said recessed portion so that a side wall of said region comes in contact with a side wall of said recessed portion, said region having a sufficient size to become a primary seed to singly aggregate; (c) performing a heat treatment for aggregating said region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (d) selectively growing a monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 14

A crystal forming method which comprises: (a) forming a semiconductor material layer or a metal material layer on a substrate having an insulating surface; (b) forming an insulating layer on said semiconductor material layer or said metal material layer; (c) partially removing the semiconductor material layer or the metal material layer leaving a semiconductor material region or a metal material region which can become a primary seed to singly aggregate; (d) forming an insulating region at a side portion of the semiconductor material region or the metal material region by covering the semiconductor material region or the metal material region with an insulating material; (e) removing the insulating layer existing on the semiconductor material region or the metal material region; (f) performing a heat treatment for aggregating the semiconductor material region or the metal material region as the primary seed to form a monocrystalline seed crystal having controlled plane orientation; and (g) selectively growing a monocrystal by crystal growth treatment using the monocrystalline seed crystal as a starting point.

Claim 15

A crystal forming method which comprises: (a) forming a semiconductor material layer or a metal material layer on a substrate having an insulating surface; (b) forming an insulating layer on said semiconductor material layer or said metal material layer; (c) partially removing the semiconductor material layer or the metal material layer leaving a semiconductor material region or a metal material region which can become a primary seed to singly aggregate; (d) forming an insulating region at a side portion of the semiconductor material region or the metal material region by covering the semiconductor material region or the metal material region with an insulating material; (e) removing the insulating layer existing on the semiconductor material region or the metal material region; (f) performing a heat treatment for aggregating the semiconductor material region or the metal material region as the primary seed to form a monocrystalline seed crystal having controlled plane orientation; and (g) selectively growing a monocrystal by crystal growth treatment using the monocrystalline seed crystal as a starting point.

Claim 16

A crystal forming method which comprises: (a) providing a substrate having a recessed portion, the surface of the recessed portion comprising an insulating material; (b) forming a semiconductor material layer or a metal material layer on the surface of the recessed portion; (c) partially removing the semiconductor material layer or the metal material layer leaving a semiconductor material region or metal material region which can become a primary seed to singly aggregate at one angular portion of the recessed portion; (d) performing a heat treatment for aggregating the semiconductor material region or the metal material region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (e) selectively growing a monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 17

A crystal forming method which comprises: (a) providing a substrate having a recessed portion, the surface of the recessed portion comprising an insulating material; (b) forming a semiconductor material layer or a metal material layer on the surface of the recessed portion; (c) partially removing the semiconductor material layer or the metal material layer leaving a semiconductor material region or metal material region which can become a primary seed to singly aggregate at one angular portion of the recessed portion; (d) performing a heat treatment for aggregating the semiconductor material region or the metal material region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (e) selectively growing a monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 18

A crystal forming method which comprises: (a) providing a substrate having a recessed portion, the surface of the recessed portion comprising an insulating material; (b) forming a semiconductor material layer or a metal material region in said recessed portion so that a side wall of said region comes in contact with a side wall of said recessed portion, said region having a size sufficient to become a primary seed to singly melt and solidify; (c) forming an insulating film on said region; (d) performing a heat treatment for melting and solidifying said region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (e) selectively growing a monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 19

A crystal forming method which comprises: (a) providing a substrate having a recessed portion, the surface of the recessed portion comprising an insulating material; (b) forming a semiconductor material layer or a metal material region in said recessed portion so that a side wall of said region comes in contact with a side wall of said recessed portion, said region having a size sufficient to become a primary seed to singly melt and solidify; (c) forming an insulating film on said region; (d) performing a heat treatment for melting and solidifying said region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (e) selectively growing a monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 20

A crystal forming method which comprises: (a) forming a semiconductor material layer or a metal material layer on a substrate having an insulating surface; (b) forming an insulating layer on said semiconductor material layer or said metal material layer; (c) partially removing the semiconductor material layer or the metal material layer leaving a semiconductor material region or a metal material region which can become a primary seed to singly aggregate; (d) forming an insulating region at a side portion of the semiconductor material region or the metal material region by covering the semiconductor material region or the metal material region with an insulating material; (e) removing the insulating layer existing on the semiconductor material region or the metal material region; (f) performing a heat treatment for melting and solidifying the semiconductor material region or the metal material region as the primary seed to form a monocrystalline seed crystal having controlled plane orientation; and (g) selectively growing a monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 21

A crystal forming method which comprises: (a) forming a semiconductor material layer or a metal material layer on a substrate having an insulating surface; (b) forming an insulating layer on said semiconductor material layer or said metal material layer; (c) partially removing the semiconductor material layer or the metal material layer leaving a semiconductor material region or a metal material region which can become a primary seed to singly aggregate; (d) forming an insulating region at a side portion of the semiconductor material region or the metal material region by covering the semiconductor material region or the metal material region with an insulating material; (e) removing the insulating layer existing on the semiconductor material region or the metal material region; (f) performing a heat treatment for melting and solidifying the semiconductor material region or the metal material region as the primary seed to form a monocrystalline seed crystal having controlled plane orientation; and (g) selectively growing a monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 22

A crystal forming method which comprises: (a) providing a substrate having a recessed portion, the surface of the recessed portion comprising an insulating material; (b) forming a semiconductor material layer or a metal material layer on the surface of the recessed portion; (c) partially removing the semiconductor material layer or the metal material layer leaving a semiconductor material region or metal material region which can become a primary seed to singly melt and solidify at one angular portion of the recessed portion; (d) performing heat treatment for melting and solidifying the semiconductor material region or the metal material region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (e) selectively growing a monocrystal by a crystal growth treatment using the seed crystal as a starting point.

Claim 23

A crystal forming method which comprises: (a) providing a substrate having a recessed portion, the surface of the recessed portion comprising an insulating material; (b) forming a semiconductor material layer or a metal material layer on the surface of the recessed portion; (c) partially removing the semiconductor material layer or the metal material layer leaving a semiconductor material region or metal material region which can become a primary seed to singly melt and solidify at one angular portion of the recessed portion; (d) performing heat treatment for melting and solidifying the semiconductor material region or the metal material region as the primary seed to form a monocrystalline seed crystal having a controlled plane orientation; and (e) selectively growing a monocrystal by a crystal growth treatment using the seed crystal as a starting point.