EP0366276A2
Expired / Lapsed
EP
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Method for forming crystal
Assignee: Canon Inc
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Filing: 1989-09-29
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Granted: —
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Expires: 2009-09-29
Abstract
Abstract A method for forming a crystal, which comprises applying, on a substrate (301) having a primary seed comprising a non-single crystalline material (303) having a surface area fine enough to be agglomeratable into a single single-crystalline body (304) by heat treatment and a non-nucleation surface with smaller nucleation density than said primary seed, a heat treatment for agglomerating said primary seed to form a single crystalline seed in an atmosphere containing hydrogen gas at a temperature lower than the temperature at which said primary seed is melted, and applying a crystal growth treatment, thereby permitting a single crystal to grow with said seed as the origination point.
Inventors
- 👤 Kenji Yamagata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 22:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/38; H10P14/3802; C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B29/00; C30B29/02; C30B29/06; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
104 words
A method for forming a crystal, which comprises applying, on a substrate having a primary seed comprising a non-single crystalline material having a surface area fine enough to be agglomeratable into a single single-crystalline body by heat treatment and a non-nucleation surface with smaller nucleation density than said primary seed, a heat treatment for agglomerating said primary seed to form a single crystalline seed in an atmosphere containing hydrogen gas at a temperature lower than the temperature at which said primary seed is melted, and applying a crystal growth treatment, thereby permitting a single crystal to grow with said seed as the origination point.
Claim 2
Independent Claim
104 words
A method for forming a crystal, which comprises applying, on a substrate having a primary seed comprising a non-single crystalline material having a surface area fine enough to be agglomeratable into a single single-crystalline body by heat treatment and a non-nucleation surface with smaller nucleation density than said primary seed, a heat treatment for agglomerating said primary seed to form a single crystalline seed in an atmosphere containing hydrogen gas at a temperature lower than the temperature at which said primary seed is melted, and applying a crystal growth treatment, thereby permitting a single crystal to grow with said seed as the origination point.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein said primary seed comprises an amorphous material.
Claim 4
Dependent Claim
14 words
A method according to claim 1, wherein said primary seed comprises a polycrystalline material.
Claim 5
Dependent Claim
20 words
A method according to claim 1, wherein said atmosphere contains 20 vol. % to 100 vol. % of hydrogen gas.
Claim 6
Dependent Claim
16 words
A method according to claim 1, wherein said crystal growth treatment is a gas phase method.
Claim 7
Dependent Claim
16 words
A method according to claim 1, wherein said crystal growth treatment is a liquid phase method.
Claim 8
Dependent Claim
17 words
A method according to claim 1, wherein said non-nucleation surface is formed of a non-single crystalline material.
Claim 9
Dependent Claim
17 words
A method according to claim 1, wherein said non-nucleation surface is formed of an electrically insulating material.
Claim 10
Dependent Claim
27 words
A method according to claim 1, wherein said non-nucleation surface is formed of a material which can react with said primary seed in solid phase with difficulty.
Claim 11
Independent Claim
93 words
A method of forming a crystal of the kind in which a seed material is placed on the substrate and then subjected to a crystal growth treatment to grow the seed into a crystal, characterised in that the seed is a non-single crystalline material capable of being agglomerated and it is then so agglomerated by the application of heat which is not great enough to melt the seed but is great enough to cause the seed to form into a single crystalline body prior to the application of the said crystal growth treatment.
Claim 12
Independent Claim
93 words
A method of forming a crystal of the kind in which a seed material is placed on the substrate and then subjected to a crystal growth treatment to grow the seed into a crystal, characterised in that the seed is a non-single crystalline material capable of being agglomerated and it is then so agglomerated by the application of heat which is not great enough to melt the seed but is great enough to cause the seed to form into a single crystalline body prior to the application of the said crystal growth treatment.
Claim 13
Dependent Claim
12 words
A crystal formed by the method as claimed in any previous claim.
References Cited (Backward Citations)
No citation records indexed.
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