EP0365166A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Crystal article and method for forming same
Assignee: Canon Inc
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Filing: 1989-09-29
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Granted: —
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Expires: 2009-09-29
Abstract
Abstract A crystal article comprises a substrate and single crystals provided on said substrate, with the shape of the contacted surface of said single crystals with said substrate being n-gonal (provided that n ≧ 5) or circular.
Inventors
- 👤 Nobuhiko Sato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 21:12
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; C30B25/18; Y; Y10; Y10S; Y10S117/00; Y10S117/913
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
36 words
A crystal article comprising a substrate and single crystals provided on said substrate, with the shape of the contacted surface of said single crystals with said substrate being n-gonal (provided that n ≧ 5) or circular.
Claim 2
Dependent Claim
36 words
A crystal article comprising a substrate and single crystals provided on said substrate, with the shape of the contacted surface of said single crystals with said substrate being n-gonal (provided that n ≧ 5) or circular.
Claim 3
Dependent Claim
11 words
A crystal article according to claim 1, wherein n is 6.
Claim 4
Independent Claim
46 words
A method for forming a crystal article comprising forming a single crystal at the concavity of a substrate having a concavity formed on the surface thereof, wherein the shape of said concavity seen from the upper surface is n-gonal (provided that n ≧ 5) or circular.
Claim 5
Independent Claim
46 words
A method for forming a crystal article comprising forming a single crystal at the concavity of a substrate having a concavity formed on the surface thereof, wherein the shape of said concavity seen from the upper surface is n-gonal (provided that n ≧ 5) or circular.
Claim 6
Dependent Claim
15 words
A method for forming a crystal article according to claim 3, wherein n is 6.
Claim 7
Independent Claim
42 words
A method for forming a crystal article, which comprises forming a single crystal by applying crystal growth treatment on a substrate having the growth origination point of the crystal, wherein the growth origination points are arranged at the positions of 6-ply symmetry.
Claim 8
Independent Claim
42 words
A method for forming a crystal article, which comprises forming a single crystal by applying crystal growth treatment on a substrate having the growth origination point of the crystal, wherein the growth origination points are arranged at the positions of 6-ply symmetry.
Claim 9
Dependent Claim
51 words
In a method of manufacturing a semi-conductor which involves growing a plurality of crystals on a substrate to a point where adjacent crystals contact one another the characterising step of growing the crystals with a polygonal or circular cross section where the sides of the polygon are not less than five.
Claim 10
Dependent Claim
51 words
In a method of manufacturing a semi-conductor which involves growing a plurality of crystals on a substrate to a point where adjacent crystals contact one another the characterising step of growing the crystals with a polygonal or circular cross section where the sides of the polygon are not less than five.
Claim 11
Dependent Claim
9 words
A semi-conductor produced by the method of claim 6.
References Cited (Backward Citations)
EP0284437A2
Cited
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