EP0284437A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
III - V Group compound crystal article and process for producing the same
Assignee: Canon Inc
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Filing: 1988-03-25
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Granted: —
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Expires: 2008-03-25
Abstract
Abstract A III - V group compound crystal article comprises a substrate (4) having a non-nucleation surface with smaller nucleation density (SNDS) (5) and a nucleation surface (SNDL) (6) which is arranged adjacent to said non-nucleation surface (SNDS), has a sufficiently small area for a crystal (7) to grow only from a single nucleus and a larger nucleation density (NDL) than the nucleation density (NDS) of said non-nucleation surface (SNDS) and is comprised of an amorphous material, and a III - V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (SNDS) beyond said nucleation surface (SNDL).
Inventors
- 👤 Hiroyuki Tokunaga
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 03:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H10P14/24; H10P14/27; H10P14/271; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
116 words
A III - V group compound crystal article comprising a substrate having a non-nucleation surface with smaller nucleation density (S NDS ) and a nucleation surface (S NDL ) which is arranged adjacent to said non-nucleation surface (S NDS ), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) and is comprised of an amorphous material, and a III - V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S NDS ) beyond said nucleation surface (S NDL ).
Claim 2
Dependent Claim
116 words
A III - V group compound crystal article comprising a substrate having a non-nucleation surface with smaller nucleation density (S NDS ) and a nucleation surface (S NDL ) which is arranged adjacent to said non-nucleation surface (S NDS ), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) and is comprised of an amorphous material, and a III - V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S NDS ) beyond said nucleation surface (S NDL ).
Claim 3
Dependent Claim
25 words
A III - V group compound crystal article according to claim 1, wherein said nucleation surface (S NDL ) is arranged in a plural number.
Claim 4
Dependent Claim
27 words
A III - V group compound crystal article according to claim 1, wherein said nucleation surface (S NDL ) is arranged in a plural number as sectionalized.
Claim 5
Dependent Claim
35 words
A III - V group compound crystal article according to claim 1, wherein said nucleation surface (S NDL ) is arranged in a plural number as sectionalized regularly within the non-nucleation surface (S NDS ).
Claim 6
Dependent Claim
35 words
A III - V group compound crystal article according to claim 1, wherein said nucleation surface (S NDL ) is arranged in a plural number as sectionalized irregularly within the non-nucleation surface (S NDS ).
Claim 7
Dependent Claim
38 words
A III - V group compound crystal article according to claim 2, wherein the monocrystals grown respectively from said nucleation surfaces (S NDL ) are adjacent to the monocrystals grown from the adjoining nucleation surfaces (S NDL ).
Claim 8
Dependent Claim
39 words
A III - V group compound crystal article according to claim 2, wherein the monocrystals grown respectively from said nucleation surfaces (S NDL ) are spatially apart from the monocrystals grown from the adjoining nucleation surfaces (S NDL ).
Claim 9
Dependent Claim
47 words
A III - V group compound crystal article according to claim 1, wherein said nucleation surface (S NDL ) is formed on the bottom surface of a recess provided in said non-nucleation surface (S NDS ), and said monocrystal is formed so as to fill said recess
Claim 10
Dependent Claim
23 words
A III - V group compound crystal article according to claim 1, wherein said non-nucleation surface (S NDS ) comprises an amorphous material.
Claim 11
Dependent Claim
18 words
A III - V group compound crystal article accrding to claim 9, wherein said amorphous material is SiO₂.
Claim 12
Dependent Claim
30 words
A III - V group compound crystal article according to claim 1, wherein said III - V group compound semiconductor is a binary system III - V group compound semiconductor.
Claim 13
Dependent Claim
30 words
A III - V group compound crystal article according to claim 1, wherein said III - V group compound semiconductor is a mixed crystal III - V group compound semiconductor.
Claim 14
Dependent Claim
123 words
A process for forming a III - V group compound crystal, which comprises applying, in a gas phase including a starting material for supplying Group III atoms and a starting material for supplying Group V atoms, crystal forming treatment on a substrate having a free surface comprising a non-nucleation surface (S NDS ) with smaller nucleation density and a nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) and comprised of an amorphous material, thereby growing a III - V group compound monocrystal from said single nucleus.
Claim 15
Dependent Claim
123 words
A process for forming a III - V group compound crystal, which comprises applying, in a gas phase including a starting material for supplying Group III atoms and a starting material for supplying Group V atoms, crystal forming treatment on a substrate having a free surface comprising a non-nucleation surface (S NDS ) with smaller nucleation density and a nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) and comprised of an amorphous material, thereby growing a III - V group compound monocrystal from said single nucleus.
Claim 16
Dependent Claim
142 words
A process for forming a III - V group compound crystal, which comprises forming with an amorphous material ,in a gas phase including a starting material for supplying Group III atoms and a starting material for supplying Group V atoms, on a substrate having a non-nucleation surface (S NDS ) with smaller nucleation density at a desired position of said non-nucleation surface (S NDS ) ,a nucleation surface (S NDL ) having a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) and a sufficiently small area for a crystal to grow only from a single nucleus and then applying crystal forming treatment on said substrate to form a single nucleus on said nucleation surface (S NDL ) to grow a III - V group compound monocrystal from said single nucleus.
Claim 17
Dependent Claim
142 words
A process for forming a III - V group compound crystal, which comprises forming with an amorphous material ,in a gas phase including a starting material for supplying Group III atoms and a starting material for supplying Group V atoms, on a substrate having a non-nucleation surface (S NDS ) with smaller nucleation density at a desired position of said non-nucleation surface (S NDS ) ,a nucleation surface (S NDL ) having a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) and a sufficiently small area for a crystal to grow only from a single nucleus and then applying crystal forming treatment on said substrate to form a single nucleus on said nucleation surface (S NDL ) to grow a III - V group compound monocrystal from said single nucleus.
Claim 18
Dependent Claim
33 words
A process for forming a III - V group compound crystal according to claim 14, wherein said nucleation surface (S NDL ) is formed internally of said non nucleation surface (S NDS ).
Claim 19
Dependent Claim
34 words
A process for forming a III - V group compound crystal according to claim 14, wherein said nucleation surface (S NDL ) is formed on the face of said non-nucleation surface (S NDS ).
Claim 20
Dependent Claim
30 words
A process for forming a III - V group compound crystal according to claim 15, wherein said nucleation surface (S NDL ) is formed in a plural number as sectionalized.
Claim 21
Dependent Claim
31 words
A process for forming a III - V group compound crystal according to claim 15, wherein said nucleation surface (S NDL ) is formed in a plural number as sectionalized regularly.
Claim 22
Dependent Claim
31 words
A process for forming a III - V group compound crystal according to claim 15, wherein said nucleation surface (S NDL ) is formed in a plural number as sectionalized irregularly.
Claim 23
Dependent Claim
29 words
A process for forming a III - V group compound crystal according to claim 15, wherein said nucleation surface (S NDL ) is formed in shape of a lattice.
Claim 24
Dependent Claim
42 words
A process for forming a III - V group compound crystal according to claim 14, wherein said nucleation surface (S NDL ) is formed in a plural number as sectionalized, and monocrystals are formed from said nucleation surfaces (S NDL ), respectively.
Claim 25
Dependent Claim
48 words
A process for forming a III - V group compound crystal according to claim 21, wherein the monocrystals grown from the above respective nucleation surfaces (S NDL ) are grown in the directions of the respective nucleation surfaces (S NDL ) beyond said nucleation surfaces (S NDL ).
Claim 26
Dependent Claim
42 words
A process for forming a III - V group compound crystal according to claim 21, wherein the monocrystals grown from the respective nucleation surfaces (S NDL ) are grown to the sizes to be adjacent to adjoining nucleation surfaces (S NDL ).
Claim 27
Dependent Claim
41 words
A process for forming a III - V group compound crystal according to claim 14, wherein said nucleation surface (S NDL ) is formed of a material which is modified from the material for forming said non-nucleation surface (S NDS ).
Claim 28
Dependent Claim
29 words
A process for forming a III - V group compound crystal according to claim 14, wherein said nucleation surface (S NDL ) is formed by the ion implantation method.
Claim 29
Dependent Claim
56 words
A process for forming a III - V group compound crystal according to claim 14, wherein said nucleation surface (S NDL ) is formed by depositing a material having sufficiently larger nucleation density than the material for forming said non-nucleation surface (S NDS ) on said non-nucleation surface (S NDS ), followed by sufficiently fine patterning.
Claim 30
Dependent Claim
79 words
A process for forming a III - V group compound crystal according to claim 14, wherein said non-nucleation surface (S NDS ) is formed so as to cover over the surface comprising the material constituting said nucleation surface (S NDL ) and the desired portion of said non nucleation surface (S NDS ) is removed, thereby having exposed a nucleation surface (S NDL ) with a suficiently small area for a crystal to grow only from a single nucleus.
Claim 31
Dependent Claim
24 words
A process for forming a III - V group compound crystal according to claim 14, wherein said substrate is constituted of an amorphous material.
Claim 32
Dependent Claim
21 words
A process for forming a III - V group compound crystal according to claim 28, wherein said amorphous material is SiO₂.
Claim 33
Dependent Claim
31 words
A process for forming a III - V group compound crystal according to claim 14, wherein said III - V group compound is a binary system III - V group compound.
Claim 34
Dependent Claim
31 words
A process for forming a III - V group compound crystal according to claim 14, wherein said III - V group compound is a mixed crystal III - V group compound.
Claim 35
Dependent Claim
24 words
A process for forming a III - V group compound crystal according to claim 30, wherein said crystal forming treatment is the MOCVD method.
References Cited (Backward Citations)
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