US5504020A
Expired / Lapsed
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Method for fabricating thin film transistor
Assignee: Sharp Corp
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Filing: 1994-09-16
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Granted: 1996-04-02
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Expires: 2014-09-16
Abstract
Abstract A method for fabricating a thin film transistor includes the steps of: forming a semiconductor layer and a gate electrode on an insulating substrate with a gate insulating film interposed therebetween; and implanting an impurity element into a surface of the semiconductor layer by accelerating hydrogen ions and ions of an element of the group III or the group V of the periodic table using at least one of the gate electrode and a resist mask used for forming the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region of the semiconductor layer is regulated in the range of 1×10 19 ions/cm 3 to 1×10 20 ions/cm 3 .
Inventors
- 👤 Shigeru Aomori
- 👤 Atsushi Yoshinouchi
- 👤 Keiji Tarui
- 👤 Tatsuo Morita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 03:52
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D86/00; H10D86/01; H10D86/021; H10D86/0231; H10D86/40; H10D86/60; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/1204; H10P95/00; H10P95/94; H01; H01J; H01J2237/00; H01J2237/30; H01J2237/317; H01J2237/31701
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
139 words
A method for fabricating a thin film transistor comprising the steps of: forming a semiconductor layer and a gate electrode on an insulating substrate with a gate insulating film interposed between the layer and the electrode; and implanting an impurity element into a surface of the semiconductor layer by accelerating hydrogen ions and ions of an element of one of the group III and the group V of the periodic table using at least one of the gate electrode and a resist mask used for forming the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region of the semiconductor layer is regulated in the range of 1×10 19 ions/cm 3 to 1×10 20 ions/cm 3 .
Claim 2
Independent Claim
139 words
A method for fabricating a thin film transistor comprising the steps of: forming a semiconductor layer and a gate electrode on an insulating substrate with a gate insulating film interposed between the layer and the electrode; and implanting an impurity element into a surface of the semiconductor layer by accelerating hydrogen ions and ions of an element of one of the group III and the group V of the periodic table using at least one of the gate electrode and a resist mask used for forming the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region of the semiconductor layer is regulated in the range of 1×10 19 ions/cm 3 to 1×10 20 ions/cm 3 .
Claim 3
Dependent Claim
21 words
A method for fabricating a thin film transistor according to claim 1, wherein the semiconductor layer is made of polycrystalline silicon.
Claim 4
Dependent Claim
45 words
A method for fabricating a thin film transistor according to claim 1, wherein the gate electrode is formed of a material selected from a group at least including aluminum, a metal containing aluminum, and a layered structure of aluminum and a metal other than aluminum.
Claim 5
Dependent Claim
46 words
A method for fabricating a thin film transistor according to claim 1, wherein steps of forming an insulating film, forming contact holes, depositing a metalization layer which are performed after the step of implanting the impurity element are performed at temperatures of 450° C. or less.
Claim 6
Independent Claim
120 words
A method for fabricating a thin film transistor comprising the steps of: forming a semiconductor layer on an insulating substrate; forming a gate insulating film on the semiconductor layer; forming a gate electrode on the gate insulating film; and implanting an impurity element into the semiconductor layer by accelerating hydrogen ions and ions of an element of one of the group III and the group V of the periodic table using the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region is regulated in the range of 1×10 19 ions/cm 3 to 1×10 20 ions/cm 3 .
Claim 7
Independent Claim
120 words
A method for fabricating a thin film transistor comprising the steps of: forming a semiconductor layer on an insulating substrate; forming a gate insulating film on the semiconductor layer; forming a gate electrode on the gate insulating film; and implanting an impurity element into the semiconductor layer by accelerating hydrogen ions and ions of an element of one of the group III and the group V of the periodic table using the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region is regulated in the range of 1×10 19 ions/cm 3 to 1×10 20 ions/cm 3 .
Claim 8
Dependent Claim
21 words
A method for fabricating a thin film transistor according to claim 5, wherein the semiconductor layer is made of polycrystalline silicon.
Claim 9
Dependent Claim
45 words
A method for fabricating a thin film transistor according to claim 5, wherein the gate electrode is formed of a material selected from a group at least including aluminum, a metal containing aluminum, and a layered structure of aluminum and a metal other than aluminum.
Claim 10
Dependent Claim
47 words
A method for fabricating a thin film transistor according to claim 5, wherein steps of forming an insulating film, forming contact holes, and depositing a metalization layer which are performed after the step of implanting the impurity element are performed at temperatures of 450° C. or less.
Claim 11
Independent Claim
159 words
A method for fabricating a thin film transistor comprising the steps of: forming a semiconductor layer on an insulating substrate; forming a gate insulating film on the semiconductor layer; forming a conductive thin film on the gate insulating film; forming a resist pattern having a predetermined pattern on the conductive thin film; forming a gate electrode and a gate electrode interconnection from the conductive thin film using the resist pattern as a mask; and implanting an impurity element into the semiconductor layer by accelerating hydrogen ions and ions of an element of one of the group III and the group V of the periodic table using the resist pattern and the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region is regulated in the range of 1×10 19 ions/cm 3 to 1×10 20 ions/cm 3 .
Claim 12
Independent Claim
159 words
A method for fabricating a thin film transistor comprising the steps of: forming a semiconductor layer on an insulating substrate; forming a gate insulating film on the semiconductor layer; forming a conductive thin film on the gate insulating film; forming a resist pattern having a predetermined pattern on the conductive thin film; forming a gate electrode and a gate electrode interconnection from the conductive thin film using the resist pattern as a mask; and implanting an impurity element into the semiconductor layer by accelerating hydrogen ions and ions of an element of one of the group III and the group V of the periodic table using the resist pattern and the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region is regulated in the range of 1×10 19 ions/cm 3 to 1×10 20 ions/cm 3 .
Claim 13
Dependent Claim
21 words
A method for fabricating a thin film transistor according to claim 9, wherein the semiconductor layer is made of polycrystalline silicon.
Claim 14
Dependent Claim
45 words
A method for fabricating a thin film transistor according to claim 9, wherein the gate electrode is formed of a material selected from a group at least including aluminum, a metal containing aluminum, and a layered structure of aluminum and a metal other than aluminum.
Claim 15
Dependent Claim
47 words
A method for fabricating a thin film transistor according to claim 9, wherein steps of forming an insulating film, forming contact holes, and depositing a metalization layer which are performed after the step of implanting the impurity element are performed at temperatures of 450° C. or less.
References Cited (Backward Citations)
JPS6122669A
Cited
JPS63119270A
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JPH0439967A
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JPH06104280A
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US5403756A
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US5397718A
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