US5403756A
Expired / Lapsed
US
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Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor
Assignee: Sharp Corp
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Filing: 1993-11-24
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Granted: 1995-04-04
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Expires: 2013-11-24
Abstract
Abstract A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.
Inventors
- 👤 Atsushi Yoshinouchi
- 👤 Tatsuo Morita
- 👤 Shuhei Tsuchimoto
- 👤 Yasuaki Murata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10P; H10P32/00; H10P32/30; H10P32/302; H10P95/00; H10P95/94
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
114 words
A method for producing a polycrystalline semiconductor film, comprising the steps of: forming a semiconductor film on a substrate; forming a passivation film on said semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of said at least one element; and implanting said hydrogen ions into said semiconductor film through said passivation film and simultaneously implanting said ions of said at least one element into said semiconductor film through said passivation film, thereby changing said semiconductor film into a polycrystalline semiconductor film having said at least one element.
Claim 2
Independent Claim
114 words
A method for producing a polycrystalline semiconductor film, comprising the steps of: forming a semiconductor film on a substrate; forming a passivation film on said semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of said at least one element; and implanting said hydrogen ions into said semiconductor film through said passivation film and simultaneously implanting said ions of said at least one element into said semiconductor film through said passivation film, thereby changing said semiconductor film into a polycrystalline semiconductor film having said at least one element.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein said semiconductor film includes amorphous silicon.
Claim 4
Dependent Claim
13 words
A method according to claim 1, wherein said semiconductor film includes microcrystalline silicon.
Claim 5
Dependent Claim
12 words
A method according to claim 1, wherein said semiconductor film includes polysilicon.
Claim 6
Dependent Claim
30 words
A method according to claim 1, wherein said polycrystalline semiconductor film is fabricated without any annealing steps at a temperature of 450° C. or higher after said ion implantation step.
Claim 7
Independent Claim
94 words
A method for producing a polycrystalline semiconductor film of n-type conductivity, comprising the steps of: forming a semiconductor film on a substrate; forming a passivation film on said semiconductor film; exciting a mixed gas including hydrogen and an element of the group V of the periodic table to form hydrogen ions and ions of said element; and implanting said hydrogen ions into said semiconductor film through said passivation film and simultaneously implanting said ions of said element into said semiconductor film through said passivation film in order to activate said ions of said element.
Claim 8
Independent Claim
94 words
A method for producing a polycrystalline semiconductor film of n-type conductivity, comprising the steps of: forming a semiconductor film on a substrate; forming a passivation film on said semiconductor film; exciting a mixed gas including hydrogen and an element of the group V of the periodic table to form hydrogen ions and ions of said element; and implanting said hydrogen ions into said semiconductor film through said passivation film and simultaneously implanting said ions of said element into said semiconductor film through said passivation film in order to activate said ions of said element.
Claim 9
Dependent Claim
18 words
A method according to claim 6, wherein said mixed gas includes H 2 gas and PH 3 gas.
Claim 10
Dependent Claim
54 words
A method according to claim 7, wherein said mixed gas and an ion dose of phosphorus satisfy the following inequalities: Y≧5×10.sup.14 ·X.sup.1.5 5×10.sup.14 ≦Y≦5×10.sup.16 where X is the concentration of PH 3 in said mixed gas represented by percentage and Y is a ion dose of phosphorus to be implanted into said semiconductor film.
Claim 11
Dependent Claim
21 words
A method according to claim 6, wherein said passivation film has a thickness in the range of 10 to 170 nm.
Claim 12
Dependent Claim
33 words
A method according to claim 6, wherein said polycrystalline semiconductor film of n-type conductivity is fabricated without any annealing steps at a temperature of 450° C. or higher after said ion implantation step.
Claim 13
Independent Claim
93 words
A method for producing a polycrystalline semiconductor film of p-type conductivity, comprising the steps of: forming a semiconductor film on a substrate; forming a passivation film on said semiconductor film; exciting a mixed gas including hydrogen and an element of the group III of the periodic table to generate hydrogen ions and ions of said element; and implanting said hydrogen into said semiconductor film through said passivation film and simultaneously implanting said ions of said element into said semiconductor film through said passivation film in order to activate said ions of said element.
Claim 14
Independent Claim
93 words
A method for producing a polycrystalline semiconductor film of p-type conductivity, comprising the steps of: forming a semiconductor film on a substrate; forming a passivation film on said semiconductor film; exciting a mixed gas including hydrogen and an element of the group III of the periodic table to generate hydrogen ions and ions of said element; and implanting said hydrogen into said semiconductor film through said passivation film and simultaneously implanting said ions of said element into said semiconductor film through said passivation film in order to activate said ions of said element.
Claim 15
Dependent Claim
11 words
A method according to claim 11, wherein said element includes boron.
Claim 16
Dependent Claim
33 words
A method according to claim 11, wherein said polycrystalline semiconductor film of p-type conductivity is fabricated without any annealing steps at a temperature of 450° C. or higher after said ion implantation step.
Claim 17
Independent Claim
116 words
A method for fabricating a thin film transistor, comprising the steps of: forming a polysilicon film on an insulating substrate; forming a passivation film on said polysilicon film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of said at least one element; and implanting said hydrogen ions into said semiconductor film through said passivation film and simultaneously implanting said ions of said at least one element into said semiconductor film through said passivation film in order to form at least one of a source and a drain in said polysilicon film.
Claim 18
Independent Claim
116 words
A method for fabricating a thin film transistor, comprising the steps of: forming a polysilicon film on an insulating substrate; forming a passivation film on said polysilicon film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of said at least one element; and implanting said hydrogen ions into said semiconductor film through said passivation film and simultaneously implanting said ions of said at least one element into said semiconductor film through said passivation film in order to form at least one of a source and a drain in said polysilicon film.
Claim 19
Dependent Claim
26 words
A method according to claim 14, said insulating substrate is made of glass having a deforming point temperature in the range of 450° to 600° C.
Claim 20
Dependent Claim
30 words
A method according to claim 14, wherein said thin film transistor is fabricated without any annealing steps at a temperature of 450° C. or higher after the ion implantation step.
Claim 21
Dependent Claim
63 words
A method according to claim 14, the method further comprising the steps of: forming a gate electrode on a gate insulating film after forming said passivation film; and implanting hydrogen ions of a dose in the range of 2×10 15 ions/cm 2 to 2×10 16 ions/cm 2 into a portion of the polysilicon film under said gate electrode after said ion implantation step.
Claim 22
Dependent Claim
26 words
A method according to claim 17, wherein a gate bus line is simultaneously formed with said gate electrode in said step of forming said gate electrode.
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