US6031290A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electronic circuit
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1998-03-13
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Granted: 2000-02-29
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Expires: 2018-03-13
Abstract
Abstract An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
Inventors
- 👤 Minoru Miyazaki
- 👤 Akane Murakami
- 👤 Baochun Cui
- 👤 Mutsuo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; H10D86/00; H10D86/40; H10D86/441; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5524
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
153 words
An electronic circuit comprising: a semiconductor film having a thickness less than 1500 Å and comprising silicon; a source and drain provided in said semiconductor film; a channel provided in said semiconductor film between said source and drain; a gate electrode provided adjacent to said channel with a gate insulating film therebetween; and an interconnect being in contact with at least one of said source and drain and comprising a first layer comprising titanium, a second layer comprising aluminum, and a third layer comprising titanium, said second layer being provided between said first layer and said third layer, wherein said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorous, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 .
Claim 2
Dependent Claim
153 words
An electronic circuit comprising: a semiconductor film having a thickness less than 1500 Å and comprising silicon; a source and drain provided in said semiconductor film; a channel provided in said semiconductor film between said source and drain; a gate electrode provided adjacent to said channel with a gate insulating film therebetween; and an interconnect being in contact with at least one of said source and drain and comprising a first layer comprising titanium, a second layer comprising aluminum, and a third layer comprising titanium, said second layer being provided between said first layer and said third layer, wherein said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorous, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 .
Claim 3
Dependent Claim
20 words
The circuit of claim 1 wherein nitrogen and titanium as constituents of said first layer are made to vary continuously.
Claim 4
Dependent Claim
17 words
The circuit of claim 1 wherein said semiconductor film has a sheet resistance less than 500 Ω/square.
Claim 5
Dependent Claim
17 words
The circuit of claim 1 wherein said first layer has a thickness of 200 to 1000 Å.
Claim 6
Dependent Claim
153 words
An electronic circuit comprising: a semiconductor film having a thickness less than 1500 Å and comprising silicon; a source and drain provided in said semiconductor film; a channel provided in said semiconductor film between said source and drain; a gate electrode provided adjacent to said channel with a gate insulating film therebetween; and an interconnect being in contact with at least one of said source and drain and comprising a first layer comprising titanium, a second layer comprising aluminum, and a third layer comprising titanium, said second layer being provided between said first layer and said third layer, wherein said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorous, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 .
Claim 7
Dependent Claim
153 words
An electronic circuit comprising: a semiconductor film having a thickness less than 1500 Å and comprising silicon; a source and drain provided in said semiconductor film; a channel provided in said semiconductor film between said source and drain; a gate electrode provided adjacent to said channel with a gate insulating film therebetween; and an interconnect being in contact with at least one of said source and drain and comprising a first layer comprising titanium, a second layer comprising aluminum, and a third layer comprising titanium, said second layer being provided between said first layer and said third layer, wherein said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorous, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 .
Claim 8
Dependent Claim
17 words
The circuit of claim 5 wherein said semiconductor film has a sheet resistance less than 500 Ω/square.
Claim 9
Dependent Claim
17 words
The circuit of claim 5 wherein said first layer has a thickness of 200 to 1000 Å.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-28 | 2003-08-30 | 2004-02-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-28 | 2007-08-30 | 2008-02-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-28 | 2011-08-30 | 2012-02-29 | $7700.00 | Window Closed / Lapsed |