US4517583A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit including a fuse element
Assignee: Toshiba Corp
•
Filing: 1984-10-04
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Granted: 1985-05-14
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Expires: 2004-10-04
Abstract
Abstract A semiconductor integrated circuit includes a transistor element, an insulating layer formed adjacent to the transistor, and a wiring connected to the transistor element at one end thereof and having a fuse as a part thereof. The wiring is made of monocrystalline silicon and formed on the insulating layer providing a substantially constant burn out current value for the fuse, and thus highly reliable operation of the circuit.
Inventors
- 👤 Yukimasa Uchida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:05
CPC Classifications
H; H10; H10B; H10B20/00; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
19 words
A semiconductor integrated circuit comprising: a MOS transistor element; an insulating layer formed adjacent to said transistor element; and
Claim 2
Dependent Claim
19 words
A semiconductor integrated circuit comprising: a MOS transistor element; an insulating layer formed adjacent to said transistor element; and
Claim 3
Dependent Claim
44 words
monocrystalline silicon wiring formed on said insulating layer, connected to said transistor element at one end thereof, and having a fuse as a part thereof, said monocrystalline silicon wiring being integrally formed with one of the source and drain of said MOS transistor element.
Claim 4
Dependent Claim
44 words
monocrystalline silicon wiring formed on said insulating layer, connected to said transistor element at one end thereof, and having a fuse as a part thereof, said monocrystalline silicon wiring being integrally formed with one of the source and drain of said MOS transistor element.
Claim 5
Dependent Claim
17 words
A semiconductor integrated circuit according to claim 1, wherein said insulating layer is an SiO 2 layer.
Claim 6
Dependent Claim
16 words
A semiconductor integrated circuit according to claim 1, wherein said insulating layer is made of sapphire.
Claim 7
Dependent Claim
17 words
A semiconductor integrated circuit according to claim 1, wherein said insulating layer is made of silicon nitride.
Claim 8
Dependent Claim
86 words
A semiconductor integrated circuit comprising a first semiconductor region at which a first transistor element is formed; a first insulating layer formed on said first semiconductor region; a second semiconductor region formed on said first insulating layer and at which a second transistor element is formed; a second insulating layer formed on said second semiconductor region; and monocrystalline silicon wiring formed between said first and second insulating layers, connected to said second transistor element at one end thereof, and having a fuse as a part thereof.
Claim 9
Dependent Claim
86 words
A semiconductor integrated circuit comprising a first semiconductor region at which a first transistor element is formed; a first insulating layer formed on said first semiconductor region; a second semiconductor region formed on said first insulating layer and at which a second transistor element is formed; a second insulating layer formed on said second semiconductor region; and monocrystalline silicon wiring formed between said first and second insulating layers, connected to said second transistor element at one end thereof, and having a fuse as a part thereof.
Claim 10
Dependent Claim
30 words
A semiconductor integrated circuit according to claim 5, wherein said first insulating layer and said second semiconductor region are alternately formed one upon the other to form a multilayer construction.
Claim 11
Dependent Claim
20 words
A semiconductor integrated circuit according to claim 5 or 6, wherein said first insulating layer is an SiO 2 layer.
Claim 12
Dependent Claim
20 words
A semiconductor integrated circuit according to claim 5 or 6, wherein said first insulating layer is made of silicon nitride.
Claim 13
Dependent Claim
75 words
A semiconductor integrated circuit comprising: a MOS transistor element; an insulating layer formed adjacent to said transistor element; and monocrystalline silicon wiring formed on said insulating layer, connected to said transistor element at one end thereof, and having a fuse as a part thereof, said monocrystalline silicon wiring and one of the drain and source of said MOS transistor element being integrally formed with each other on said insulating layer in the same manufacturing step.
Claim 14
Dependent Claim
75 words
A semiconductor integrated circuit comprising: a MOS transistor element; an insulating layer formed adjacent to said transistor element; and monocrystalline silicon wiring formed on said insulating layer, connected to said transistor element at one end thereof, and having a fuse as a part thereof, said monocrystalline silicon wiring and one of the drain and source of said MOS transistor element being integrally formed with each other on said insulating layer in the same manufacturing step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-05-13 | 1988-11-12 | 1989-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-05-13 | 1992-11-12 | 1993-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-05-13 | 1996-11-12 | 1997-05-14 | $7700.00 | Window Closed / Lapsed |