US4017769A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuits and method of producing the same
Assignee: Siemens AG
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Filing: 1973-02-16
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Granted: 1977-04-12
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Expires: 1993-02-16
Abstract
Abstract An integrated circuit formed on the surface of an insulating substrate is provided with an overlying conductive layer interconnecting the integrated circuit with an external electrode, and an intermediate layer of insulating material is interposed between the conductive layer and the substrate.
Inventors
- 👤 Charlotte Raetzel
- 👤 Jenoe Tihanyi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:22
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; H10W; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5524; H10W72/59
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
105 words
An integrated circuit comprising an electrically insulating substrate formed of sapphire or spinel, a plurality of individual areas of a semiconductor layer supported on said substrate, a metallic conductor path supported on said substrate for connecting an external electrode with at least a portion of said semiconductor layer, and an electrically insulating intermediate layer interposed between said substrate and said conductive path and underlying all of the junction between said external electrode and said conductive path, said intermediate layer being disposed immediately on said substrate under said junction and immediately under said conductive path, and formed of SiO 2 or Si 3 N 4 .
Claim 2
Dependent Claim
105 words
An integrated circuit comprising an electrically insulating substrate formed of sapphire or spinel, a plurality of individual areas of a semiconductor layer supported on said substrate, a metallic conductor path supported on said substrate for connecting an external electrode with at least a portion of said semiconductor layer, and an electrically insulating intermediate layer interposed between said substrate and said conductive path and underlying all of the junction between said external electrode and said conductive path, said intermediate layer being disposed immediately on said substrate under said junction and immediately under said conductive path, and formed of SiO 2 or Si 3 N 4 .
Claim 3
Dependent Claim
22 words
Apparatus according to claim 1, wherein said intermediate insulating layer overlies at least a portion of one of said individual semiconductor areas.
Claim 4
Dependent Claim
24 words
Apparatus according to claim 2, wherein said intermediate insulating layer is interposed between said portion of the individual semiconductor area and said conductive path.
Claim 5
Dependent Claim
16 words
An integrated circuit as claimed in claim 1, wherein said semiconductor layer is formed of silicon.
Claim 6
Dependent Claim
17 words
An integrated circuit as claimed in claim 1, wherein said metallic conductor path is formed of aluminium.
Claim 7
Independent Claim
85 words
A method of producing an integrated circuit, comprising the steps of forming a semiconductor layer on a portion of the surface of an electrically insulating substrate, applying an electrically insulating layer of SiO 2 or Si 3 N 4 to a portion of said surface and to a portion of the surface of said semiconductor layer, and thereafter applying a conductor path to the surface of said insulating layer where it lies immediately over said substrate for connecting said semiconductor layer to an external electrode.
Claim 8
Independent Claim
85 words
A method of producing an integrated circuit, comprising the steps of forming a semiconductor layer on a portion of the surface of an electrically insulating substrate, applying an electrically insulating layer of SiO 2 or Si 3 N 4 to a portion of said surface and to a portion of the surface of said semiconductor layer, and thereafter applying a conductor path to the surface of said insulating layer where it lies immediately over said substrate for connecting said semiconductor layer to an external electrode.
Claim 9
Dependent Claim
37 words
The method as claimed in claim 6, wherein said intermediate layer is formed of SiO 2 and is produced by chemically reacting SiH 4 with oxygen at a temperature in the range of 300° - 400° C.
Claim 10
Dependent Claim
36 words
The method as claimed in claim 6, wherein said intermediate layer is formed of SiO 2 and is produced by chemically reacting tetraethoxysilane with oxygen at a temperature in the range of 350° - 450° C.
Claim 11
Dependent Claim
40 words
The method as claimed in claim 6, wherein said intermediate layer is formed of Si 3 N 4 and is produced by chemically reacting SiH 4 and NH 3 at a temperature in the range of 600° - 700° C.
Claim 12
Dependent Claim
21 words
The method as claimed in claim 6, including the step of compressing said intermediate layer at a temperature above 700° C.
Claim 13
Dependent Claim
49 words
The method as claimed in claim 10 wherein said the compression of the intermediate layer is connected with the fabrication of the gate-isolator of a field effect transistor consisting of the semiconductor layer and wherein said intermediate layer must be removed from the gate of said field effect transistor.
Claim 14
Dependent Claim
33 words
The method according to claim 6, including the step of connecting an electrode to said conductor path at an area where said insulating layer lies immediately between said substrate and said conductor path.
Claim 15
Dependent Claim
103 words
In an integrated circuit having an electrically insulating substrate formed of sapphire or spinel, a plurality of individual areas of a semiconductor layer supported on said substrate, and a metallic conductor path supported on said substrate, means for firmly supporting said conductor path by said substrate, comprising an electrically insulating intermediate layer interposed between said substrate and said conductive path and underlying all of the junction between said external electrode and said conductive path, said intermediate layer being disposed immediately on said substrate under said junction and immediately under said conductive path, and formed of SiO 2 or Si 3 N 4 .
Claim 16
Dependent Claim
103 words
In an integrated circuit having an electrically insulating substrate formed of sapphire or spinel, a plurality of individual areas of a semiconductor layer supported on said substrate, and a metallic conductor path supported on said substrate, means for firmly supporting said conductor path by said substrate, comprising an electrically insulating intermediate layer interposed between said substrate and said conductive path and underlying all of the junction between said external electrode and said conductive path, said intermediate layer being disposed immediately on said substrate under said junction and immediately under said conductive path, and formed of SiO 2 or Si 3 N 4 .
Claim 17
Independent Claim
98 words
A method of producing an integrated circuit having a substrate formed of sapphire or spinel with a conductor path firmly supported by said substrate, comprising the steps of forming a semiconductor layer on a portion of a surface of said substrate, applying an electrically insulating layer of SiO 2 or SiN 4 to a portion of said surface and to a portion of the surface of said semiconductor layer, and thereafter applying a conductor path to the surface of said insulating layer where it lies immediately over said substrate for connecting said semiconductor layer to an external electrode.
Claim 18
Independent Claim
98 words
A method of producing an integrated circuit having a substrate formed of sapphire or spinel with a conductor path firmly supported by said substrate, comprising the steps of forming a semiconductor layer on a portion of a surface of said substrate, applying an electrically insulating layer of SiO 2 or SiN 4 to a portion of said surface and to a portion of the surface of said semiconductor layer, and thereafter applying a conductor path to the surface of said insulating layer where it lies immediately over said substrate for connecting said semiconductor layer to an external electrode.
Claim 19
Dependent Claim
33 words
The method according to claim 14, including the step of connecting an electrode to said conductor path at an area where said insulating layer lies immediately between said substrate and said conductor path.
References Cited (Backward Citations)
US3413145A
Cited
US3736193A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-11 | 1980-10-11 | 1981-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-11 | 1984-10-11 | 1985-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-11 | 1988-10-11 | 1989-04-12 | $7700.00 | Window Closed / Lapsed |