US5804878A
Expired / Lapsed
US
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Electronic circuit
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1996-04-24
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Granted: 1998-09-08
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Expires: 2016-04-24
Abstract
Abstract An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
Inventors
- 👤 Minoru Miyazaki
- 👤 Akane Murakami
- 👤 Baochun Cui
- 👤 Mutsuo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; H10D86/00; H10D86/40; H10D86/441; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5524
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
217 words
An electronic circuit comprising: a semiconductor film having a thickness less than 1500 Å and comprising silicon; a source and drain provided in said semiconductor film; a channel provided in said semiconductor film between said source and drain; a gate electrode provided adjacent to said channel with a gate insulating film therebetween; an oxide of a material of said gate electrode provided on at least a side of said gate electrode; a first layer comprising titanium and nitrogen; and a second layer comprising aluminum and provided with said first layer preventing said semiconductor film and said second layer from being in contact with each other, wherein said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorous, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 , wherein said channel extends beyond side edges of said gate electrode in a direction along said source and drain, and wherein said gate insulating film extends on a part of said channel extending beyond said side edges of said gate electrode to sandwich said channel between said gate insulating film and an insulating surface underlying said channel.
Claim 2
Dependent Claim
217 words
An electronic circuit comprising: a semiconductor film having a thickness less than 1500 Å and comprising silicon; a source and drain provided in said semiconductor film; a channel provided in said semiconductor film between said source and drain; a gate electrode provided adjacent to said channel with a gate insulating film therebetween; an oxide of a material of said gate electrode provided on at least a side of said gate electrode; a first layer comprising titanium and nitrogen; and a second layer comprising aluminum and provided with said first layer preventing said semiconductor film and said second layer from being in contact with each other, wherein said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorous, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 , wherein said channel extends beyond side edges of said gate electrode in a direction along said source and drain, and wherein said gate insulating film extends on a part of said channel extending beyond said side edges of said gate electrode to sandwich said channel between said gate insulating film and an insulating surface underlying said channel.
Claim 3
Dependent Claim
15 words
The electronic circuit of claim 1 wherein said semiconductor film has N- or P-type conductivity.
Claim 4
Dependent Claim
18 words
The electronic circuit of claim 1 wherein said semiconductor film has a thickness between 100 and 750 Å.
Claim 5
Dependent Claim
38 words
The electronic circuit of claim 1 further comprising a third layer located under said semiconductor film and in contact with said semiconductor film, and wherein said semiconductor film and said third layer are doped with a common impurity.
Claim 6
Dependent Claim
20 words
The electronic circuit of claim 1 wherein said first layer is in contact with a film of a conductive oxide.
Claim 7
Dependent Claim
21 words
The electronic circuit of claim 1 wherein said first and second layers constitute a conductive interconnect connected with an external terminal.
Claim 8
Dependent Claim
25 words
The electronic circuit of claim 1 wherein ratio (the number of nitrogen atoms)/(the number of titanium atoms) is 0.5 to 1.2 in said first layer.
Claim 9
Dependent Claim
18 words
The electronic circuit of claim 1 wherein said second layer has a thickness of 2000 to 5000 Å.
Claim 10
Dependent Claim
30 words
The electronic circuit of claim 5 wherein said conductive oxide comprises a material selected from the group consisting of an indium tin oxide, a zinc oxide and a nickel oxide.
Claim 11
Dependent Claim
267 words
An electronic circuit comprising: a semiconductor film having a thickness less than 1500 Å and comprising silicon; a source and drain provided in said semiconductor film; a channel provided in said semiconductor film between said source and drain; a gate electrode provided adjacent to said channel with a gate insulating film therebetween; an oxide of a material of said gate electrode provided on at least a side of said gate electrode; a first layer comprising titanium and nitrogen; a second layer provided on said first layer and comprising titanium and nitrogen; and a third layer comprising aluminum and provided with said first layer and said second layer preventing said semiconductor film and said third layer from being in contact with each other, wherein said first, second and third layers constitute a conductive interconnect, and ratio of titanium to nitrogen in said first layer is larger than ratio of titanium to nitrogen in said second layer, and said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorous, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 , wherein said channel extends beyond side edges of said gate electrode in a direction along said source and drain, and wherein said gate insulating film extends on a part of said channel extending beyond said side edges of said gate electrode to sandwich said channel between said gate insulating film and an insulating surface underlying said channel.
Claim 12
Dependent Claim
267 words
An electronic circuit comprising: a semiconductor film having a thickness less than 1500 Å and comprising silicon; a source and drain provided in said semiconductor film; a channel provided in said semiconductor film between said source and drain; a gate electrode provided adjacent to said channel with a gate insulating film therebetween; an oxide of a material of said gate electrode provided on at least a side of said gate electrode; a first layer comprising titanium and nitrogen; a second layer provided on said first layer and comprising titanium and nitrogen; and a third layer comprising aluminum and provided with said first layer and said second layer preventing said semiconductor film and said third layer from being in contact with each other, wherein said first, second and third layers constitute a conductive interconnect, and ratio of titanium to nitrogen in said first layer is larger than ratio of titanium to nitrogen in said second layer, and said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorous, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 , wherein said channel extends beyond side edges of said gate electrode in a direction along said source and drain, and wherein said gate insulating film extends on a part of said channel extending beyond said side edges of said gate electrode to sandwich said channel between said gate insulating film and an insulating surface underlying said channel.
Claim 13
Dependent Claim
15 words
The electronic circuit of claim 10 wherein said semiconductor film has N- or P-type conductivity.
Claim 14
Dependent Claim
18 words
The electronic circuit of claim 10 wherein said semiconductor film has a thickness between 100 and 750 Å.
Claim 15
Dependent Claim
18 words
The electronic circuit of claim 10 wherein said third layer has a thickness of 2000 to 5000 Å.
Claim 16
Dependent Claim
38 words
The electronic circuit of claim 10 further comprising a fourth layer located under said semiconductor film and in contact with said semiconductor film, and wherein said semiconductor film and said fourth layer are doped with a common impurity.
Claim 17
Dependent Claim
201 words
An electronic circuit comprising: a semiconductor film having a thickness less than 1500 Å and comprising silicon; a source and drain provided in said semiconductor film; a channel provided in said semiconductor film between said source and drain; a gate electrode provided adjacent to said channel with a gate insulating film therebetween; an oxide of a material of said gate electrode provided on at least a side of said gate electrode; a first layer comprising titanium; and a second layer in contact with said first layer and comprising aluminum, wherein said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorus, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 , wherein said channel extends beyond side edges of said gate electrode in a direction along said source and drain, and wherein said gate insulating film extends on a part of said channel extending beyond said side edges of said gate electrode to sandwich said channel between said gate insulting film and an insulating surface underlying said channel.
Claim 18
Dependent Claim
201 words
An electronic circuit comprising: a semiconductor film having a thickness less than 1500 Å and comprising silicon; a source and drain provided in said semiconductor film; a channel provided in said semiconductor film between said source and drain; a gate electrode provided adjacent to said channel with a gate insulating film therebetween; an oxide of a material of said gate electrode provided on at least a side of said gate electrode; a first layer comprising titanium; and a second layer in contact with said first layer and comprising aluminum, wherein said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorus, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 , wherein said channel extends beyond side edges of said gate electrode in a direction along said source and drain, and wherein said gate insulating film extends on a part of said channel extending beyond said side edges of said gate electrode to sandwich said channel between said gate insulting film and an insulating surface underlying said channel.
Claim 19
Dependent Claim
16 words
The circuit of claim 1 wherein said region is a source or drain of a transistor.
Claim 20
Dependent Claim
16 words
The circuit of claim 10 wherein said region is a source or drain of a transistor.
Claim 21
Dependent Claim
16 words
The circuit of claim 15 wherein said region is a source or drain of a transistor.
Claim 22
Dependent Claim
13 words
The electronic circuit of claim 1 wherein said oxide comprises an anodic oxide.
Claim 23
Dependent Claim
13 words
The electronic circuit of claim 10 wherein said oxide comprises an anodic oxide.
Claim 24
Dependent Claim
13 words
The electronic circuit of claim 15 wherein said oxide comprises an anodic oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-07 | 2002-03-09 | 2002-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-07 | 2006-03-09 | 2006-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-07 | 2010-03-09 | 2010-09-08 | $7700.00 | Window Closed / Lapsed |