US5365104A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Oxynitride fuse protective/passivation film for integrated circuit having resistors
Assignee: Paradigm Technology Inc
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Filing: 1993-03-25
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Granted: 1994-11-15
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Expires: 2013-03-25
Abstract
Abstract An oxynitride passivation layer and/or fuse protective layer for an SRAM cell having load resistors, where the composition of the oxynitride layer minimizes the effect of hydrogen diffusion on the resistance of underlying load resistors. The index of refraction of the oxynitride is between 1.60 and 1.85. This oxynitride does not substantially diffuse hydrogen into the load resistors even when heated to temperatures over 400 DEG C., and hence, avoids altering resistance during subsequent annealing steps.
Inventors
- 👤 Norman Godinho
- 👤 Hai-Pyng Liaw
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10B; H10B10/00; H10B10/15
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
95 words
An integrated circuit comprising: a semiconductor substrate; a resistive element formed overlying the substrate; a fuse formed overlying the substrate and laterally spaced apart from the resistive element; a fuse protective layer overlying the fuse, wherein the fuse protective layer comprises a layer of doped silicate glass and a first oxynitride layer overlying the doped silicate glass layer the first oxynitride layer having a composition with a refractive index in a range of about 160 to 1.85; and a second oxynitride layer formed overlying the resistive element as an uppermost layer of the integrated circuit.
Claim 2
Dependent Claim
95 words
An integrated circuit comprising: a semiconductor substrate; a resistive element formed overlying the substrate; a fuse formed overlying the substrate and laterally spaced apart from the resistive element; a fuse protective layer overlying the fuse, wherein the fuse protective layer comprises a layer of doped silicate glass and a first oxynitride layer overlying the doped silicate glass layer the first oxynitride layer having a composition with a refractive index in a range of about 160 to 1.85; and a second oxynitride layer formed overlying the resistive element as an uppermost layer of the integrated circuit.
Claim 3
Dependent Claim
26 words
The integrated circuit of claim 1, wherein the second oxynitride layer has a composition with a refractive index in a range of about 1.60 to 1.85.
Claim 4
Dependent Claim
21 words
The integrated circuit of claim 2, wherein the second oxynitride layer has a composition with a refractive index of about 1.70.
Claim 5
Dependent Claim
48 words
The integrated circuit of claim 1, wherein the composition of the second oxynitride layer is such that when the integrated circuit is heated to over 400° C., the resistance of the resistive element is not changed by release of hydrogen from the oxynitride layer into the resistive element.
Claim 6
Dependent Claim
13 words
The integrated circuit of claim 1, wherein the resistive element comprises polycrystalline silicon.
Claim 7
Dependent Claim
135 words
An integrated circuit including a plurality of layers and comprising: a semiconductor substrate; a resistive element formed overlying the substrate, wherein the resistive element comprises polycrystalline silicon; an oxynitride layer formed overlying the resistive element as an uppermost layer of the integrated circuit, the oxynitride layer having a composition which does not release enough hydrogen to alter substantially the resistance of the resistive element; a fuse formed overlying the substrate and laterally spaced apart from the resistive element; and a fuse protective layer between the fuse and the oxynitride layer, wherein the fuse protective layer comprises a layer of doped silicate glass and a second oxynitride layer formed overlying the doped silicate glass layer and wherein the composition of the second oxynitride layer has a refractive index in a range of about 1.60 to 1.85.
Claim 8
Dependent Claim
135 words
An integrated circuit including a plurality of layers and comprising: a semiconductor substrate; a resistive element formed overlying the substrate, wherein the resistive element comprises polycrystalline silicon; an oxynitride layer formed overlying the resistive element as an uppermost layer of the integrated circuit, the oxynitride layer having a composition which does not release enough hydrogen to alter substantially the resistance of the resistive element; a fuse formed overlying the substrate and laterally spaced apart from the resistive element; and a fuse protective layer between the fuse and the oxynitride layer, wherein the fuse protective layer comprises a layer of doped silicate glass and a second oxynitride layer formed overlying the doped silicate glass layer and wherein the composition of the second oxynitride layer has a refractive index in a range of about 1.60 to 1.85.
Claim 9
Dependent Claim
21 words
The integrated circuit of claim 6, wherein the composition of the second oxynitride layer has a refractive index of about 1.70.
Claim 10
Dependent Claim
157 words
An integrated circuit including a plurality of layers and comprising: a semiconductor substrate; a resistive element formed overlying the substrate, wherein the resistive element comprises polycrystalline silicon an oxynitride layer formed overlying the resistive element as an uppermost layer of the integrated circuit, the oxynitride layer having a composition which does not release enough hydrogen to alter substantially the resistance of the resistive element; a fuse formed overlying the substrate and laterally spaced apart from the resistive element; and a fuse protective layer between the fuse and the oxynitride layer, wherein the fuse protective layer comprises a layer of doped silicate glass and a second oxynitride layer formed overlying the doped silicate glass layer, and the composition of the second oxynitride layer is such that when the integrated circuit is heated to over 400° C., the resistance of the resistive element is not altered by diffusion of hydrogen from the second oxynitride layer into the resistive element.
Claim 11
Dependent Claim
157 words
An integrated circuit including a plurality of layers and comprising: a semiconductor substrate; a resistive element formed overlying the substrate, wherein the resistive element comprises polycrystalline silicon an oxynitride layer formed overlying the resistive element as an uppermost layer of the integrated circuit, the oxynitride layer having a composition which does not release enough hydrogen to alter substantially the resistance of the resistive element; a fuse formed overlying the substrate and laterally spaced apart from the resistive element; and a fuse protective layer between the fuse and the oxynitride layer, wherein the fuse protective layer comprises a layer of doped silicate glass and a second oxynitride layer formed overlying the doped silicate glass layer, and the composition of the second oxynitride layer is such that when the integrated circuit is heated to over 400° C., the resistance of the resistive element is not altered by diffusion of hydrogen from the second oxynitride layer into the resistive element.
Claim 12
Dependent Claim
17 words
The integrated circuit of claim 2, further comprising a plurality of electrical elements formed on the substrate.
Claim 13
Dependent Claim
13 words
The integrated circuit of claim 9, wherein the resistive element comprises polycrystalline silicon.
Claim 14
Dependent Claim
21 words
The integrated circuit of claim 10, wherein the first oxynitride layer has a composition with a refractive index of about 1.70.
Claim 15
Dependent Claim
21 words
The integrated circuit of claim 11, wherein the second oxynitride layer has a composition with a refractive index of about 1.70.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-14 | 1998-05-16 | 1998-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-14 | 2002-05-16 | 2002-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-14 | 2006-05-16 | 2006-11-15 | $7700.00 | Window Closed / Lapsed |