US5472912A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making an integrated circuit structure by using a non-conductive plug
Assignee: STMicroelectronics lnc USA
•
Filing: 1994-11-07
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Granted: 1995-12-05
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Expires: 2014-11-07
Abstract
Abstract A conductive layer is formed over an insulating layer and extending down into a contact opening. An insulating layer is then deposited over the device and in the opening, and etched back to form a plug of dielectric material in the bottom of the opening. An aluminum layer is then deposited over the device and in the opening under such conditions as to cause a substantially complete fill of the opening by the aluminum, and result in a planar surface above the opening.
Inventors
- 👤 Robert O. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 00:31
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/036; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/0281; C23C16/06; C23C16/18; C23C16/20; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10P; H10P14/00; H10P14/40; H10P14/412; H10W20/056; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
155 words
A method for forming an interlevel contact in an integrated circuit device, comprising the steps of: etching an opening through an insulating layer to expose a conductive structure beneath; depositing a conductive first barrier layer over the insulating layer and in the opening, wherein the first barrier layer covers sidewalls of the opening and the conductive structure; depositing a non-conductive conformal layer of material over the first barrier layer; etching back the conformal layer to form a non-conductive plug filling a lower portion of the opening, wherein the non-conductive layer is removed from the first barrier layer over the insulating layer; depositing a refractory metal layer over the first barrier layer and the plug; and depositing an aluminum layer over the refractory metal layer at a temperature and a deposition rate which allows the aluminum to migrate into the opening and completely fill the opening, wherein the aluminum layer is substantially planar over the opening.
Claim 2
Independent Claim
155 words
A method for forming an interlevel contact in an integrated circuit device, comprising the steps of: etching an opening through an insulating layer to expose a conductive structure beneath; depositing a conductive first barrier layer over the insulating layer and in the opening, wherein the first barrier layer covers sidewalls of the opening and the conductive structure; depositing a non-conductive conformal layer of material over the first barrier layer; etching back the conformal layer to form a non-conductive plug filling a lower portion of the opening, wherein the non-conductive layer is removed from the first barrier layer over the insulating layer; depositing a refractory metal layer over the first barrier layer and the plug; and depositing an aluminum layer over the refractory metal layer at a temperature and a deposition rate which allows the aluminum to migrate into the opening and completely fill the opening, wherein the aluminum layer is substantially planar over the opening.
Claim 3
Dependent Claim
45 words
The method of claim 1, further comprising the step of: before depositing the refractory metal layer, forming a second barrier layer over the first barrier layer and the plug, wherein the refractory metal layer is formed over and in contact with the second barrier layer.
Claim 4
Dependent Claim
56 words
The method of claim 2, wherein the step of forming the second barrier layer comprises the steps of: depositing a titanium nitride layer over the first barrier layer and the plug; depositing a titanium layer over the titanium nitride layer; and heating the device in a nitrogen atmosphere to convert the titanium layer to titanium nitride.
Claim 5
Dependent Claim
45 words
The method of claim 3, further comprising the step of: before depositing the titanium nitride layer, depositing a lower titanium layer over the first barrier layer and the plug, wherein the titanium nitride layer is formed over and in contact with the lower titanium layer.
Claim 6
Dependent Claim
23 words
The method of claim 1, wherein the step of depositing the non-conductive conformal layer comprises depositing the non-conductive layer by chemical vapor deposition.
Claim 7
Dependent Claim
11 words
The method of claim 5, wherein the non-conductive layer comprises polysilicon.
Claim 8
Dependent Claim
11 words
The method of claim 5, wherein the non-conductive layer comprises oxide.
Claim 9
Dependent Claim
15 words
The method of claim 1, wherein the step of etching back comprises an isotropic etch.
Claim 10
Dependent Claim
15 words
The method of claim 1, wherein the step of etching back comprises an anisotropic etch.
Claim 11
Dependent Claim
12 words
The method of claim 1, wherein the refractory metal layer comprises titanium.
Claim 12
Dependent Claim
20 words
The method of claim 10, wherein the titanium layer has a thickness of between approximately 50 Å and 600 Å.
Claim 13
Dependent Claim
30 words
The method of claim 1, wherein the aluminum is deposited at a temperature of between approximately 400° C. and 500° C., at a rate of less than approximately 50 Å/sec.
Claim 14
Dependent Claim
29 words
The method of claim 12, wherein the aluminum deposition step further comprises the step of depositing an initial layer of aluminum at a temperature less than approximately 300° C.
Claim 15
Dependent Claim
20 words
The method of claim 12, further comprising the step of depositing additional aluminum at a rate exceeding approximately 50 Å/sec.
Claim 16
Dependent Claim
24 words
The method of claim 12, wherein the aluminum deposition step comprises the step of depositing an initial layer of aluminum at approximately room temperature.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-04 | 1999-06-05 | 1999-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-04 | 2003-06-05 | 2003-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-04 | 2007-06-05 | 2007-12-05 | $7700.00 | Window Closed / Lapsed |