US4566177A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Formation of electromigration resistant aluminum alloy conductors
Assignee: Signetics Corp
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Filing: 1984-05-11
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Granted: 1986-01-28
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Expires: 2004-05-11
Abstract
Abstract Electromigration resistance of aluminum alloy conductors in semiconductor devices is found to significantly increase by rapidly annealing the conductors by employing an annealing cycle with a peak temperature of 520°-580° C. and a cycle time of about 5 to 30 seconds such as is developed by high intensity CW lamps.
Inventors
- 👤 Everhardus P. G. T. van de Ven
- 👤 Janet M. Towner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:21
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/18; C23C14/58; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; Y; Y10; Y10S; Y10S438/00; Y10S438/927
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
142 words
A method of providing a semiconductor device with aluminum containing conductors of improved electromigration resistance, said method comprising; (a) depositing, on a substrate of said device, a thin conductive layer of an alloy of aluminum containing at least 90% by weight of aluminum; (b) heating said thus coated substrate to a peak temperature of 520° C.-580° C. from ambient temperature and then cooling said heated substrate to ambient temperatures all within a period of 5 seconds to about 30 seconds by exposing said coated substrate to a source of heat capable of raising the temperature of said coated substrate to said peak temperature from ambient temperature and then allowing said thus heated substrate to return to ambient temperature all within the same period and (c) forming a conductive pattern on said substrate by removing portions of said conductive layer from said substrate.
Claim 2
Independent Claim
142 words
A method of providing a semiconductor device with aluminum containing conductors of improved electromigration resistance, said method comprising; (a) depositing, on a substrate of said device, a thin conductive layer of an alloy of aluminum containing at least 90% by weight of aluminum; (b) heating said thus coated substrate to a peak temperature of 520° C.-580° C. from ambient temperature and then cooling said heated substrate to ambient temperatures all within a period of 5 seconds to about 30 seconds by exposing said coated substrate to a source of heat capable of raising the temperature of said coated substrate to said peak temperature from ambient temperature and then allowing said thus heated substrate to return to ambient temperature all within the same period and (c) forming a conductive pattern on said substrate by removing portions of said conductive layer from said substrate.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein the alloy of aluminum contains, in addition to the aluminum, up to 3% by weight in total of one or more of silicon, copper, nickel, chromium or manganese.
Claim 4
Dependent Claim
15 words
The method of claim 2 wherein the heat source is a high intensity CW lamp.
Claim 5
Dependent Claim
21 words
The method of claim 3 wherein the substrate is a material selected from the group consisting of silicon and silicon dioxide.
Claim 6
Dependent Claim
22 words
The method of claim 4 wherein the conductive layer is an alloy of aluminum with up to 3% by weight of copper.
Claim 7
Dependent Claim
30 words
The method of claim 4 wherein the conductive layer is an alloy of aluminum with up to 2% by weight of copper and up to 1% by weight of silicon.
Claim 8
Dependent Claim
10 words
The method of claim 5 wherein the substrate is silicon.
Claim 9
Dependent Claim
11 words
The method of claim 5 wherein the substrate is silicon dioxide.
Claim 10
Independent Claim
154 words
A method of providing a semiconductive device with aluminum containing conductors of improved electromigration resistance said method comprising; (a) depositing on a substrate of said device a thin conductive layer of an alloy of aluminum with up to 3% by weight in total of one or more of silicon, copper, nickel, chromium or manganese, (b) forming a conductive pattern on said substrate by removing portions of said thin conductive layer from said substrate and (c) heating said thus patterned substrate to a peak temperature of 520° C.-580° C. from ambient temperature and then cooling said heated substrate to ambient temperatures all within a period of 5 seconds to about 30 seconds by exposing said coated substrate to a source of heat capable of raising the temperature of said coated substrate to said peak temperature from ambient temperature and then allowing said thus heated substrate to return to ambient temperature all within the same period.
Claim 11
Independent Claim
154 words
A method of providing a semiconductive device with aluminum containing conductors of improved electromigration resistance said method comprising; (a) depositing on a substrate of said device a thin conductive layer of an alloy of aluminum with up to 3% by weight in total of one or more of silicon, copper, nickel, chromium or manganese, (b) forming a conductive pattern on said substrate by removing portions of said thin conductive layer from said substrate and (c) heating said thus patterned substrate to a peak temperature of 520° C.-580° C. from ambient temperature and then cooling said heated substrate to ambient temperatures all within a period of 5 seconds to about 30 seconds by exposing said coated substrate to a source of heat capable of raising the temperature of said coated substrate to said peak temperature from ambient temperature and then allowing said thus heated substrate to return to ambient temperature all within the same period.
Claim 12
Dependent Claim
15 words
The method of claim 9 wherein the heat source is a high intensity CW lamp.
Claim 13
Dependent Claim
21 words
The method of claim 10 wherein the substrate is a material selected from the group consisting of silicon and silicon dioxide.
Claim 14
Dependent Claim
24 words
The method of claim 11 wherein the aluminium containing conductive layer is a alloy of aluminum with up to 3% by way of copper
Claim 15
Dependent Claim
32 words
The method of claim 11 wherein the aluminum containing conductive layer is an alloy of aluminum with up to 2% by weight of copper and up to 1% by weight of silicon.
Claim 16
Dependent Claim
10 words
The method of claim 11 wherein the substrate is silicon.
Claim 17
Dependent Claim
11 words
The method of claim 11 wherein the substrate is silicon dioxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-27 | 1989-07-29 | 1990-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-27 | 1993-07-29 | 1994-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-27 | 1997-07-29 | 1998-01-28 | $7700.00 | Window Closed / Lapsed |