EP0273715A2
Expired / Lapsed
EP
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Method for forming metal layer for a semiconductor device
Assignee: Fujitsu VLSI Ltd
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Filing: 1987-12-23
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Granted: —
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Expires: 2007-12-23
Abstract
Abstract A method for forming a metal layer includes the steps of forming an insulation layer (62) having at least one step portion on a wafer (48, 61); and forming the metal layer (63) over the insulation layer. The metal layer is formed by depositing aluminium-based alloy by sputtering while the wafer is heated to a temperature higher than that which produces a solid solution in the aluminium-based alloy. As a result at the step portion, a good step coverage can be obtained and the surface of the aluminium alloy layer is planarized. At the same time, the method according to the present invention contributes to a prevention of deterioration in the quality of the layer by preventing the formation of a silicon rich layer adjacent the insulating layer with interferes with a subsequent patterning process. The method also enables the deposition process to be carried out at a later stage.
Inventors
- 👤 Minoru Hainesu Mizonokuchi 213 Inoue
- 👤 Kouzi Fujitsu Dai 11 Nakahara Ryo Hashizume
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 05:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; H10P; H10P14/00; H10P14/40; H10P14/412; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; H10P14/42; H10P14/44; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
81 words
A method for forming a metal layer by depositing an aluminium-based alloy on a wafer by sputtering, comprising: forming an insulation layer (62) having at least one step portion on the wafer (48, 61); and forming said metal layer (63) by depositing the aluminium-based alloy over the insulation layer while the wafer is heated; characterised in that the wafer (48, 61) is heated to a temperature higher than the temperature at which a solid solution is formed in the aluminium-based alloy.
Claim 2
Independent Claim
81 words
A method for forming a metal layer by depositing an aluminium-based alloy on a wafer by sputtering, comprising: forming an insulation layer (62) having at least one step portion on the wafer (48, 61); and forming said metal layer (63) by depositing the aluminium-based alloy over the insulation layer while the wafer is heated; characterised in that the wafer (48, 61) is heated to a temperature higher than the temperature at which a solid solution is formed in the aluminium-based alloy.
Claim 3
Dependent Claim
37 words
A method as set forth in claim 1, wherein the temperature of the wafer is set to at least a lower limit value of the temperature at which a solid solution is formed in the aluminium-based alloy.
Claim 4
Dependent Claim
32 words
A method as set forth in claim 2, wherein the aluminium-based alloy is a binary alloy and contains 1 percent by weight of silicon and the lower limit value is approximately 525°C.
Claim 5
Independent Claim
38 words
A method as set forth in any preceding claim, wherein the wafer is heated to at least 525°C by heat produced by a heater (42) and heat generated due to a deposition of aluminium atoms on the wafer.
Claim 6
Dependent Claim
90 words
A semiconductor device comprising: a semiconductor wafer (48, 61); an insulation layer (62) formed on the wafer and having at least one step portion; and, a metal layer (63) formed over the insulation layer including the step portion, the metal layer being formed by depositing an aluminium-based alloy over the insulation layer by sputtering while the wafer is heated to a temperature higher than the temperature at which a solid solution is formed in the aluminium based alloy thereby producing an aluminium alloy layer having a substantially homogeneous composition throughout.
Claim 7
Dependent Claim
90 words
A semiconductor device comprising: a semiconductor wafer (48, 61); an insulation layer (62) formed on the wafer and having at least one step portion; and, a metal layer (63) formed over the insulation layer including the step portion, the metal layer being formed by depositing an aluminium-based alloy over the insulation layer by sputtering while the wafer is heated to a temperature higher than the temperature at which a solid solution is formed in the aluminium based alloy thereby producing an aluminium alloy layer having a substantially homogeneous composition throughout.
Claim 8
Dependent Claim
66 words
A semiconductor device comprising: a semiconductor wafer (48, 61); an insulation layer (62) formed on said wafer and having at least one step portion; and, a metal layer (63) formed over said insulation layer including said step portion, said metal layer being formed by depositing aluminium-based alloy over said insulation layer by sputtering while said wafer is heated to a temperature higher than a predetermined temperature.
Claim 9
Dependent Claim
66 words
A semiconductor device comprising: a semiconductor wafer (48, 61); an insulation layer (62) formed on said wafer and having at least one step portion; and, a metal layer (63) formed over said insulation layer including said step portion, said metal layer being formed by depositing aluminium-based alloy over said insulation layer by sputtering while said wafer is heated to a temperature higher than a predetermined temperature.
References Cited (Backward Citations)
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