EP0310108A2
Expired / Lapsed
EP
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Interconnection structure of a semiconductor device and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1988-09-30
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Granted: —
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Expires: 2008-09-30
Abstract
Abstract A semiconductor device and a method of manufacturing the same wherein the first and second wirings (12, 14) with an interlayer insulating film (13) interposed therebetween are connected through a contact hole (15) formed in the interlayer insulating film (13). In the semiconductor device, the first and second wirings (12, 14) are connected via a low resistive, conductive metal layer (18) obtained by reducing a highly resistive oxide layer (16) with a highly oxidizing metal (17), the highly resistive oxide layer (16) being exposed within the contact hole (15) on the surface of the first wiring (12). In the method of manufactzuring a semiconductor device, a contact hole (15) is opened in the interlayer insulation (13) on the first wiring (12), a highly oxidizing metal (17) is deposited on the highly resistive oxide layer (16) on the surface of the hirst wiring (12) within the contact hole (15), and the highly resistive oxide layer (16) is reduced with the highly oxidizing metal (17) to change the highly resistive oyide layer to a low resistive, conductive metal layer (18). The second wiring (14) is connected to the first wiring (12) via the conductive metal layer. The reduction may be carried out before or after depositing the second wiring, or at the time when the highly oxidizing metal is deposited.
Inventors
- 👤 Katsuya Okumura
- 👤 Toshinori Shinki
- 👤 Toshiaki Toshiba Isogo Dairoku Ryo Idaka
- 👤 Riichirou Aoki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 12:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10W20/056; H10W20/036; H10W20/037; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
129 words
A method of manufacturing a semiconductor device comprising the steps of: forming an interlayer insulating film (13) on a first wiring (12) ; opening a contact hole (15) in said interlayer insulating film (13) extending to the surface of said first wiring (12); depositing a highly oxidizing metal (17)within said contact hole (15)where a highly resistive oxide layer (16)is formed on said first wiring; depositing a second wiring (14) within said contact hole(15)for obtaining conduction between said first and second wirings (12, 14); and reducing said highly resistive oxide layer (16) with said highly oxidizing metal (17) to change said highly resistive oxide layer(16)to a low resistive, conductive metal layer (18)by means of heat treatment, said reduction step being performed at any time after said contact hole opening step.
Claim 2
Independent Claim
129 words
A method of manufacturing a semiconductor device comprising the steps of: forming an interlayer insulating film (13) on a first wiring (12) ; opening a contact hole (15) in said interlayer insulating film (13) extending to the surface of said first wiring (12); depositing a highly oxidizing metal (17)within said contact hole (15)where a highly resistive oxide layer (16)is formed on said first wiring; depositing a second wiring (14) within said contact hole(15)for obtaining conduction between said first and second wirings (12, 14); and reducing said highly resistive oxide layer (16) with said highly oxidizing metal (17) to change said highly resistive oxide layer(16)to a low resistive, conductive metal layer (18)by means of heat treatment, said reduction step being performed at any time after said contact hole opening step.
Claim 3
Dependent Claim
23 words
A method of manufacturing a semiconductor device according to claim 1, wherein said reduction step is performed after said second wiring deposition step.
Claim 4
Dependent Claim
31 words
A method of manufacturing a semiconductor device according to claim 1, wherein said reduction step is performed after said highly oxidizing metal deposition step and before said second wiring deposition step.
Claim 5
Dependent Claim
29 words
A method of manufacturing a semiconductor device according to claim 1, wherein said reduction step is performed at the time when said highly oxidizing metal deposition step is performed.
Claim 6
Dependent Claim
32 words
A method of manufacturing a semiconductor device according to claim 1, wherein the material of said first and second wirings (12, 14) is selected from the group consisting of Al and Cu.
Claim 7
Dependent Claim
40 words
A method of manufacturing a semiconductor device according to claim 1, wherein said highly oxidizing metal (17)is selected from the group consisting of Ti, V, Mg, Li, Ni, HfV, AlHf, NiSi₂, HfSi₂, VSi₂, HfB, VB, HfC, VC, HfN and VN.
Claim 8
Dependent Claim
29 words
A method of manufacturing a semiconductor device according to claim 1, wherein said reduction step is performed by heat treatment in a forming gas made of N₂ and H₂.
Claim 9
Dependent Claim
49 words
A method of manufacturing a semiconductor device according to claim 1, wherein said highly oxidizing metal(17)is Ti which is deposited to the thickness of 500 angstroms, and said first and second wirings (12, 14)are Al, the second wiring ( 14) Al being deposited to the thickness of 1 micron.
Claim 10
Dependent Claim
93 words
A semiconductor device comprising: a first wiring (12) an interlayer insulating film (13) formed on said first wiring (12) and having a contact hole (15) extending to the surface of said first wiring (12); a low resistive, conductive metal layer (18) obtained by reducing a highly resistive oxide layer (16) with a highly oxidizing metal, said highly resistive oxide layer (16) being exposed within said contact hole (15) on the surface of said first wiring (12); and a second wiring (14) which conducts with said first wiring (12)via said conductive metal layer (18)
Claim 11
Dependent Claim
93 words
A semiconductor device comprising: a first wiring (12) an interlayer insulating film (13) formed on said first wiring (12) and having a contact hole (15) extending to the surface of said first wiring (12); a low resistive, conductive metal layer (18) obtained by reducing a highly resistive oxide layer (16) with a highly oxidizing metal, said highly resistive oxide layer (16) being exposed within said contact hole (15) on the surface of said first wiring (12); and a second wiring (14) which conducts with said first wiring (12)via said conductive metal layer (18)
Claim 12
Dependent Claim
27 words
A semiconductor device according to claim 9, wherein the material of said first and second wirings (12, 14)is selected from the group consisting of Al and Cu.
Claim 13
Dependent Claim
35 words
A semiconductor device according to claim 9, wherein said highly oxidizing metal(17)is selected from the group consisting of Ti, V, Mg, Li, Ni, HfV, AlHf, NiSi₂, HfSi₂, VSi₂, HfB, VB, HfC, VC, HfN and VN.
Claim 14
Dependent Claim
47 words
A semiconductor device according to claim 9, wherein said highly oxidizing metal (17) which is deposited to the thickness of 500 angstroms is Ti, and said first and second wiring materials (12, 14)are Al, the second wiring (14) Al being deposited to the thickness of 1 micron.
Claim 15
Dependent Claim
34 words
A semiconductor device according to claim 9, wherein said first wiring (12) is formed on a Si semiconductor substrate (11) with a barrier layer (11A) such as TiN layer or W layer interposed therebetween.
Claim 16
Dependent Claim
38 words
A semiconductor device according to claim 9, wherein said second wiring (14) is formed on said interlayer insulating film (13), with said highly oxidizing metal (17)and a barrier layer (17A)such as TiN layer or W layer interposed therebetween.
References Cited (Backward Citations)
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