US3158504A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of alloying an ohmic contact to a semiconductor
Assignee: Texas Instruments Inc
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Filing: 1960-10-07
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Granted: 1964-11-24
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Expires: 1980-10-07
Abstract
No abstract record available.
Inventors
- 👤 Robert E Anderson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 14:06
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/54; C23C14/541; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
60 words
A METHOD FOR FORMING AN OHMIC CONTACT TO A SILICON BODY THAT COMPRISES POSITIONING A SILICON BODY IN PROXIMITY TO A SOURCE OF GOLD IN A VACUUM, HEATING THE SILICON BODY TO A TEMPERATURE OF ABOUT 300*C., AND EVAPORATING THE GOLD SO THAT VAPORIZED PARTICLES THEREOF ARE DEPOSITED UPON THE SURFACE OF THE SILICON BODY TO FORM AN ALLOY THEREWITH.
Claim 2
Independent Claim
60 words
A METHOD FOR FORMING AN OHMIC CONTACT TO A SILICON BODY THAT COMPRISES POSITIONING A SILICON BODY IN PROXIMITY TO A SOURCE OF GOLD IN A VACUUM, HEATING THE SILICON BODY TO A TEMPERATURE OF ABOUT 300*C., AND EVAPORATING THE GOLD SO THAT VAPORIZED PARTICLES THEREOF ARE DEPOSITED UPON THE SURFACE OF THE SILICON BODY TO FORM AN ALLOY THEREWITH.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-11-24 | 1968-05-25 | 1968-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-11-24 | 1972-05-25 | 1972-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-11-24 | 1976-05-25 | 1976-11-24 | $7700.00 | Window Closed / Lapsed |