Processes for making transistors

Claim 1

IN THE PROCESS OF MAKING A TRANSISTOR, IN COMBINATION, THE STEPS OF DISPOSING A PELLET OF A FUSIBLE COLLECTOR MATERIAL CAPABLE OF PROVIDING A FIRST TYPE OF CONDUCTIVITY TO A SEMICONDUCTOR MEMBER IN A PREDETERMINED ASSOCIATION WITH ONE SURFACE OF A WAFER OF SEMICONDUCTING MATERIAL OF THE OPPOSITE TYPE OF CONDUCTIVITY, HEATING THE SEMICONDUCTOR MATERIAL TO A TEMPERATURE ABOVE 424*C., BUT BELOW THE MELTING POINT OF THE PELLET, AND EVAPORATING A FILM OF A METAL CAPABLE OF CONFERRING SAID FIRST TYPE OF CONDUCTIVITY UPON ANOTHER SURFACE OF THE SEMICONDUCTOR WAFER WHILE SO HEATING IT, THEREAFTER RAISING THE TEMPERATURE OF THE SEMICONDUCTOR WAFER TO EFFECT A FUSING OF THE PELLET OF COLLECTOR MATERIAL AND ALLOYING WITH THE SEMICONDUCTOR SURFACE AND AT THE SAME TIME FUSING THE FILM OF EVAPORATED METAL THAT HAS BEEN DEPOSITED ON THE WAFER SURFACE SO THAT IT IS ALLOYED WITH THE SEMICONDUCTOR WAFER, THE AREA OF THE EVAPORATED FILM BEING SMALLER THAN THE FUSED AREA OF THE PELLET ON THE WAFER, LOWERING THE TEMPERATURE OF THE SEMICONDUCTOR AND EVAPORATING MORE METAL UPON THE FILM ON THE SEMICONDUCTOR WAFER TO PROVIDE AN EMITTER LAYER AND EVAPORATING SIMULTANEOUSLY DURING THE LATTER PORTION OF SUCH EVAPORATION A CONTACT METAL ON THE EMITTER LAYER TO EFFECT AN ALLOYING OF THE EMITTER METAL AND THE CONTACT METAL.