US2802759A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing evaporation fused junction semiconductor devices
Assignee: Raytheon Co
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Filing: 1955-06-28
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Granted: 1957-08-13
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Expires: 1975-06-28
Abstract
No abstract record available.
Inventors
- 👤 Moles Leslie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:13
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; C; C23; C23C; C23C14/00; C30; C30B; C30B25/00; C30B25/02; C30B25/06; H10P10/00; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3466; H10P14/40; H10P32/00; H10P32/10; H10P32/16
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
192 words
THE METHOD OF PRODUCING AN INTEGRAL REGROWN CRYSTAL REGION OF ONE CONDUCTIVITY TYPE UPON A SURFACE OF A SEMICONDUCTOR CRYSTAL BODY HAVING A PREDETERMINED CONDUCTIVITY TYPE COMPRISING: EVAPORATING A FIRST MOLTEN LAYER OF SUBSTANTIAL THICKNESS OF SOLVENT METAL CONTAINING AN ACTIVE IMPURITY UPON SAID SURFACE OF SAID SEMICONDUCTOR BODY, SAID SURFACE OF SAID SEMICONDUCTOR BODY BEING AT A TEMPERATURE ABOVE THE EUTECTIC TEMPERATURE OF SAID SOLVENT METAL AND SAID SEMICONDUCTOR MATERIAL, SAID ACTIVE IMPURITY BEING OF A TYPE WHICH DETERMINES THE CONDUCTIVITY TYPE OF THE INTEGRAL REGROWN CRYSTAL REGION; COOLING SAID SEMICONDUCTOR BODY TO A TEMPERATURE BELOW SAID EUTECTIC TEMPERATURE OF SAID SOLVENT METAL AND SAID SEMICONDUCTOR BODY; RAISING SAID SEMICONDUCTOR BODY TO A TEMPERATURE ABOVE SAID EUTECTIC TEMPERATURE OF SAID SOLVENT METAL AND SAID SEMICONDUCTOR MATERIAL; EVAPORATING A SECOND MOLTEN LAYER OF SUBSTANTIAL THICKNESS OF SOLVENT METAL CONTAINING AN ACTIVE IMPURITY UPON SAID SURFACE OF SAID SEMICONDUCTOR BODY; AND COOLING SAID SEMICONDUCTOR BODY TO CAUSE THE DISSOLVED SEMICONDUCTOR MATERIAL TO PRECIPITATE, TOGETHER WITH SOME ATOMS OF SAID ACTIVE IMPURITY, UPON SAID SEMICONDUCTOR BODY TO FORM AN INTEGRAL REGROWN CRYSTAL REGION OF A CONDUCTIVITY TYPE OPPOSITE TO THAT OF SAID SEMICONDUCTOR BODY.
Claim 2
Independent Claim
192 words
THE METHOD OF PRODUCING AN INTEGRAL REGROWN CRYSTAL REGION OF ONE CONDUCTIVITY TYPE UPON A SURFACE OF A SEMICONDUCTOR CRYSTAL BODY HAVING A PREDETERMINED CONDUCTIVITY TYPE COMPRISING: EVAPORATING A FIRST MOLTEN LAYER OF SUBSTANTIAL THICKNESS OF SOLVENT METAL CONTAINING AN ACTIVE IMPURITY UPON SAID SURFACE OF SAID SEMICONDUCTOR BODY, SAID SURFACE OF SAID SEMICONDUCTOR BODY BEING AT A TEMPERATURE ABOVE THE EUTECTIC TEMPERATURE OF SAID SOLVENT METAL AND SAID SEMICONDUCTOR MATERIAL, SAID ACTIVE IMPURITY BEING OF A TYPE WHICH DETERMINES THE CONDUCTIVITY TYPE OF THE INTEGRAL REGROWN CRYSTAL REGION; COOLING SAID SEMICONDUCTOR BODY TO A TEMPERATURE BELOW SAID EUTECTIC TEMPERATURE OF SAID SOLVENT METAL AND SAID SEMICONDUCTOR BODY; RAISING SAID SEMICONDUCTOR BODY TO A TEMPERATURE ABOVE SAID EUTECTIC TEMPERATURE OF SAID SOLVENT METAL AND SAID SEMICONDUCTOR MATERIAL; EVAPORATING A SECOND MOLTEN LAYER OF SUBSTANTIAL THICKNESS OF SOLVENT METAL CONTAINING AN ACTIVE IMPURITY UPON SAID SURFACE OF SAID SEMICONDUCTOR BODY; AND COOLING SAID SEMICONDUCTOR BODY TO CAUSE THE DISSOLVED SEMICONDUCTOR MATERIAL TO PRECIPITATE, TOGETHER WITH SOME ATOMS OF SAID ACTIVE IMPURITY, UPON SAID SEMICONDUCTOR BODY TO FORM AN INTEGRAL REGROWN CRYSTAL REGION OF A CONDUCTIVITY TYPE OPPOSITE TO THAT OF SAID SEMICONDUCTOR BODY.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-08-12 | 1961-02-11 | 1961-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-08-12 | 1965-02-11 | 1965-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-08-12 | 1969-02-11 | 1969-08-13 | $7700.00 | Window Closed / Lapsed |