US2695852A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of semiconductors for signal translating devices
Assignee: AT&T Inc
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Filing: 1952-02-15
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Granted: 1954-11-30
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Expires: 1972-02-15
Abstract
No abstract record available.
Inventors
- 👤 Sparks Morgan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:07
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
70 words
THE METHOD OF FABRICATING A SEMICONDUCTIVE ELEMENT FOR SIGNAL TRANSLATING DEVICES WHICH COMPRISES VAPOR DEPOSITING A MATERIAL SELECTED FROM THE GROUP CONSISTING OF ACCEPTORS AND DONORS UPON A BODY OF SEMICONDUCTIVE MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON, IN AN INERT ATMOSPHERE AND WHILE MAINTAINING SAID BODY AT A TEMPERATURE ABOVE THE MELTING POINT OF THE SEMICONDUCTOR-IMPURITY EUTECTIC AND BELOW THE MELTING POINT OF THE SEMICONDUCTIVE MATERIAL.
Claim 2
Independent Claim
70 words
THE METHOD OF FABRICATING A SEMICONDUCTIVE ELEMENT FOR SIGNAL TRANSLATING DEVICES WHICH COMPRISES VAPOR DEPOSITING A MATERIAL SELECTED FROM THE GROUP CONSISTING OF ACCEPTORS AND DONORS UPON A BODY OF SEMICONDUCTIVE MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON, IN AN INERT ATMOSPHERE AND WHILE MAINTAINING SAID BODY AT A TEMPERATURE ABOVE THE MELTING POINT OF THE SEMICONDUCTOR-IMPURITY EUTECTIC AND BELOW THE MELTING POINT OF THE SEMICONDUCTIVE MATERIAL.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1957-11-29 | 1958-05-31 | 1958-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1961-11-29 | 1962-05-31 | 1962-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1965-11-29 | 1966-05-31 | 1966-11-30 | $7700.00 | Window Closed / Lapsed |