EP0168828A2
Expired / Lapsed
EP
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Method for manufacturing a semiconductor device having wiring layers
Assignee: Hitachi Ltd
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Filing: 1985-07-17
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Granted: —
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Expires: 2005-07-17
Abstract
Abstract A semiconductor device includes a first wiring layer (22) whose thickness within a contact hole (24) is great in a lower portion thereof and is small in an upper portion thereof. Since the first wiring layer (22) is sufficiently thick at the periphery of the bottom surface of the contact hole (24), reaction between a second wiring layer (23) formed on the first wiring layer (22) and a substrate (20) is effectively prevented. The first wiring layer (22) is formed by bias sputtering in which a bias voltage is applied to the substrate (20).
Inventors
- 👤 Yoshio Honma
- 👤 Sukeyoshi Tsunekawa
- 👤 Natsuki Yokoyama
- 👤 Hiroshi Morisaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 13:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/056; H10W20/064; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
103 words
A semiconductor device comprising an insulating film (21) formed on a base layer (20), a contact hole (24) formed in said insulating film (21), a first wiring layer (22) continuously formed on at least a side surface and a bottom surface of said contact hole (24), and a second wiring layer (23) covering said first wiring layer (22) and extending from said contact hole (24) across said insulating film (21), characterised in that said first wiring layer (22) has a greater film thickness at a lower portion of the side of said contact hole (24) than at an upper portion of said side.
Claim 2
Dependent Claim
103 words
A semiconductor device comprising an insulating film (21) formed on a base layer (20), a contact hole (24) formed in said insulating film (21), a first wiring layer (22) continuously formed on at least a side surface and a bottom surface of said contact hole (24), and a second wiring layer (23) covering said first wiring layer (22) and extending from said contact hole (24) across said insulating film (21), characterised in that said first wiring layer (22) has a greater film thickness at a lower portion of the side of said contact hole (24) than at an upper portion of said side.
Claim 3
Dependent Claim
28 words
The semiconductor device of claim 1, wherein said second wiring layer (23) is formed of an Al film or an alloy film containing Al as a main component.
Claim 4
Dependent Claim
18 words
The semiconductor device of claim 2, wherein said alloy film contains Al-Cu alloy, Al-Si alloy and/or Al-Mn alloy.
Claim 5
Dependent Claim
29 words
The semiconductor device of any of claims 1 to 3, wherein said first wiring layer (22) comprises a transition metal, an alloy or a compound of said transition metal.
Claim 6
Dependent Claim
17 words
The semiconductor device of claim 4, wherein said transition metal is Ti, W, Mo, Pt and/or Pd.
Claim 7
Dependent Claim
32 words
The semiconductor device of any of claims 1 to 5, wherein said first wiring layer comprises two films (22a, 22b) disposed upon each other and consisting of the same or different materials.
Claim 8
Independent Claim
90 words
A method for manufacturing a semiconductor device comprising the steps of forming an insulating film (21) on a base layer (20); forming a contact hole (24) in said insulating film (21); forming a first wiring layer (22) so as to continuously cover at least a bottom surface and a side surface of said contact hole (24); and forming a second wiring layer (23) extending from the interior of said contact hole (24) across said insulating film (21); characterised in that said first wiring layer (22) is formed by bias sputtering.
Claim 9
Independent Claim
90 words
A method for manufacturing a semiconductor device comprising the steps of forming an insulating film (21) on a base layer (20); forming a contact hole (24) in said insulating film (21); forming a first wiring layer (22) so as to continuously cover at least a bottom surface and a side surface of said contact hole (24); and forming a second wiring layer (23) extending from the interior of said contact hole (24) across said insulating film (21); characterised in that said first wiring layer (22) is formed by bias sputtering.
Claim 10
Dependent Claim
21 words
The method of claim 7, wherein said bias sputtering is carried out at a resputtering rate of about 20 to 90%.
Claim 11
Dependent Claim
22 words
The method of claim 8 or 9, wherein said second wiring layer (23) is formed by vacuum evaporation, sputtering or bias sputtering.
Claim 12
Dependent Claim
28 words
The method of claim 9, wherein said bias sputtering applied to form said second wiring layer (23) is carried out at a resputtering rate of 50 to 90%.
Claim 13
Independent Claim
35 words
The method of any of claims 7 to 10, wherein the formation of said first wiring layer includes forming a first film (22a) by normal sputtering and thereupon a second film (22b) by bias sputtering.
References Cited (Backward Citations)
No citation records indexed.
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