EP0269019A2
Expired / Lapsed
EP
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Method for producing a semiconductor device
Assignee: Toshiba Corp
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Filing: 1987-11-20
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Granted: —
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Expires: 2007-11-20
Abstract
Abstract A semiconductor device is disclosed, in which a titanium nitride film (12) containing boron or carbon is provided between a semiconductor substrate (10) and an aluminum film (13). Non-reacted substances in the titanium nitride film (12) are rendered inactive by boron or carbon contained in the titanium nitride film (12). Thus, it is possible to improve the barrier properties of the titanium nitride film (12) as mutual diffusion prevention film and also ensure good electric conductivity.
Inventors
- 👤 Katsuya C/O Patent Division Okumura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 23:38
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0526; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10W20/033; H10W20/047; H10W20/051; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
72 words
A semiconductor device comprising: a semiconductor substrate (10) of a first conductivity type which has a surface layer with an impurity region of a second conductivity type; a nitrified high melting point film (12) formed on said semiconductor substrate (10); and a metal film (13) formed on said nitrified high melting point film (12), characterized in that said nitrified high melting point film (12) contains at least one of boron and carbon.
Claim 2
Dependent Claim
72 words
A semiconductor device comprising: a semiconductor substrate (10) of a first conductivity type which has a surface layer with an impurity region of a second conductivity type; a nitrified high melting point film (12) formed on said semiconductor substrate (10); and a metal film (13) formed on said nitrified high melting point film (12), characterized in that said nitrified high melting point film (12) contains at least one of boron and carbon.
Claim 3
Dependent Claim
21 words
A device according to claim 1, characterized in that said nitrified high melting point film (12) is a titanium nitride film.
Claim 4
Dependent Claim
21 words
A device according to claim 1, characterized in that said nitrified high melting point film (12) is a hafnium nitride film.
Claim 5
Dependent Claim
21 words
A device according to claim 1, characterized in that said nitrified high melting point film (12) is a tungsten nitride film.
Claim 6
Dependent Claim
17 words
A device according to claim 1, characterized in that said semiconductor substrate (10) is a silicon substrate.
Claim 7
Dependent Claim
18 words
A device according to claim 1, characterized in that said semiconductor substrate (10) is a gallium arsenide substrate.
Claim 8
Dependent Claim
17 words
A device according to claim 1, characterized in that said metal film (13) is an aluminum film.
Claim 9
Dependent Claim
32 words
A device according to claim 1, characterized in that a titanium film or a titanium silicide film is formed between said semiconductor substrate (10) and said nitrified high melting point film (12).
Claim 10
Dependent Claim
32 words
A device according to claim 1, characterized in that a cobalt film or a cobalt silicide film is formed between said semiconductor substrate (10) and said nitrified high melting point film (12).
References Cited (Backward Citations)
No citation records indexed.
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