EP0480409A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of fabricating a Ti/TiN/Al contact, with a reactive sputtering step
Assignee: NEC Corp
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Filing: 1991-10-09
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Granted: —
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Expires: 2011-10-09
Abstract
Abstract The present invention relates to a method of fabricating a semiconductor device, which comprises a formation of contact holes in an interlayer insulating film formed on a silicon substrate, formation of a titanium film and a titanium nitride film, as a barrier metal, and lamp annealing. The formation of the titanium nitride film is featured by reactive sputtering using a titanium target whose orientation ratio of (001) plane is not more than 70 %. The titanium nitride film thus formed does not shrink rapidly during heat treatment and thus degradation of barrier performance thereof is prevented.
Inventors
- 👤 Nobukazu C/O Nec Corporation Ito
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 13:27
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0526; C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C14/22; C23C14/34; C23C14/3407; C23C14/3414; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W20/033; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S148/00; Y10S148/158
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
115 words
A method of fabricating a semiconductor device comprising the steps of: forming at least one contact hole in an insulating film formed on a silicon substrate to expose a part of said silicon substrate; depositing a titanium film and a titanium nitride film on said insulating film and said part of said silicon substrate; annealing said silicon substrate; and depositing an aluminum film on said titanium nitride film to form an electrode wiring layer having three-layer structure of said aluminum film, said titanium nitride film and said titanium film; wherein said titanium nitride film is formed by reactive sputtering using a titanium target having orientation ratio of (001) plane of not more than 70 %.
Claim 2
Independent Claim
115 words
A method of fabricating a semiconductor device comprising the steps of: forming at least one contact hole in an insulating film formed on a silicon substrate to expose a part of said silicon substrate; depositing a titanium film and a titanium nitride film on said insulating film and said part of said silicon substrate; annealing said silicon substrate; and depositing an aluminum film on said titanium nitride film to form an electrode wiring layer having three-layer structure of said aluminum film, said titanium nitride film and said titanium film; wherein said titanium nitride film is formed by reactive sputtering using a titanium target having orientation ratio of (001) plane of not more than 70 %.
Claim 3
Dependent Claim
38 words
The method claimed in claim 1, wherein said titanium target is constructed with at least one titanium plate having high orientation ratio of (001) plane and at least one titanium plate having low orientation ratio of (001) plane.
Claim 4
Dependent Claim
15 words
The method claimed in claim 2, wherein each said titanium plate is triangle in shape.
Claim 5
Dependent Claim
43 words
The method claimed in claim 1, wherein said titanium target is constituted with a plurality of said titanium plates having high orientation ratio and a plurality of said titanium plates having low orientation ratio and wherein said titanium target is polygonal in shape.
Claim 6
Dependent Claim
12 words
The method claimed in claim 1, wherein said titanium target is annealed.
References Cited (Backward Citations)
FR2443926A1
Cited
EP0310108A2
Cited
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