US6166397A
Expired / Lapsed
US
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Display device with inverted type transistors in the peripheral and pixel portions
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1999-01-04
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Granted: 2000-12-26
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Expires: 2019-01-04
Abstract
Abstract A display device having high definition and high reliability, and technology for manufacturing the same. In an active matrix type display device of integrated peripheral driving circuit type, pixel TFTs of an active matrix circuit 100 are not provided with LDD regions. Also, among circuits constituting peripheral driving circuits 101, 102, buffer circuits, of which a high withstand voltage and high-speed operation are required, are made with thin film transistors having floating island regions and base regions between source and drain regions of their active layers.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Hongyong Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:57
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6719; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6737; H10D30/6739; H10D30/6757; H10D86/01; H10D86/021; H10D86/471; H10D86/60; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; H10P14/3816; H10P14/382
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
194 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a shift register circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 2
Dependent Claim
194 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a shift register circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 3
Dependent Claim
14 words
A circuit according to claim 1, wherein said insulating surface is a buffer layer.
Claim 4
Dependent Claim
13 words
A device according to claim 1, wherein the semiconductor film comprises crystalline silicon.
Claim 5
Dependent Claim
193 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a level-shifter circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 6
Dependent Claim
193 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a level-shifter circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 7
Dependent Claim
14 words
A circuit according to claim 4, wherein said insulating surface is a buffer layer.
Claim 8
Dependent Claim
13 words
A device according to claim 4, wherein the semiconductor film comprises crystalline silicon.
Claim 9
Dependent Claim
193 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a sampling circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 10
Dependent Claim
193 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a sampling circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 11
Dependent Claim
14 words
A circuit according to claim 7, wherein said insulating surface is a buffer layer.
Claim 12
Dependent Claim
13 words
A device according to claim 7, wherein the semiconductor film comprises crystalline silicon.
Claim 13
Dependent Claim
193 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a memory circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 14
Dependent Claim
193 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a memory circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 15
Dependent Claim
14 words
A circuit according to claim 10, wherein said insulating surface is a buffer layer.
Claim 16
Dependent Claim
13 words
A device according to claim 10, wherein the semiconductor film comprises crystalline silicon.
Claim 17
Dependent Claim
193 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a CPU circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 18
Dependent Claim
193 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a CPU circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 19
Dependent Claim
14 words
A circuit according to claim 13, wherein said insulating surface is a buffer layer.
Claim 20
Dependent Claim
13 words
A device according to claim 13, wherein the semiconductor film comprises crystalline silicon.
Claim 21
Dependent Claim
193 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a digital/analog circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 22
Dependent Claim
193 words
An active matrix type display device having a pixel portion and a peripheral circuit portion comprising a digital/analog circuit, said device comprising: at least an inverted stagger type thin film transistor formed in said pixel portion; at least a CMOS transistor formed in said peripheral circuit portion, said CMOS transistor comprising an n-type inverted stagger type thin film transistor and a p-type inverted stagger type thin film transistor; each of said inverted stagger type thin film transistor in said pixel portion and in said peripheral circuit portion comprising: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; and a channel region formed between the source region and the drain region, wherein one of said n-type and p-type inverted stagger type thin film transistor comprises an LDD region formed between said source region and said channel region or between said channel region and said drain region, and wherein said inverted stagger type thin film transistor in said pixel portion does not comprise an LDD region.
Claim 23
Dependent Claim
14 words
A circuit according to claim 16, wherein said insulating surface is a buffer layer.
Claim 24
Dependent Claim
13 words
A device according to claim 16, wherein the semiconductor film comprises crystalline silicon.
Claim 25
Dependent Claim
168 words
An active matrix type liquid crystal display device including a peripheral circuit portion and a pixel portion comprising: at least a first inverted stagger type thin film transistor formed in the pixel portion; at least a CMOS transistor formed in the peripheral circuit portion; an n-type second inverted stagger type thin film transistor and a p-type third inverted stagger type thin film transistor formed in the CMOS transistor; said n-type second inverted stagger type thin film transistor of the CMOS transistor including: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; a channel region formed between the source region and the drain region; at least an LDD region formed over the gate electrode in the semiconductor film, said LDD region being formed between the source region and the channel region or between the channel region and the drain region.
Claim 26
Dependent Claim
168 words
An active matrix type liquid crystal display device including a peripheral circuit portion and a pixel portion comprising: at least a first inverted stagger type thin film transistor formed in the pixel portion; at least a CMOS transistor formed in the peripheral circuit portion; an n-type second inverted stagger type thin film transistor and a p-type third inverted stagger type thin film transistor formed in the CMOS transistor; said n-type second inverted stagger type thin film transistor of the CMOS transistor including: a gate electrode formed on an insulating surface; a gate insulating film formed on the gate electrode; a semiconductor film formed on the gate insulating film; a source region and a drain region formed in the semiconductor film; a channel region formed between the source region and the drain region; at least an LDD region formed over the gate electrode in the semiconductor film, said LDD region being formed between the source region and the channel region or between the channel region and the drain region.
Claim 27
Dependent Claim
14 words
A device according to claim 19, wherein said insulating surface is a buffer layer.
Claim 28
Dependent Claim
13 words
A device according to claim 19, wherein the semiconductor film comprises crystalline silicon.
Claim 29
Dependent Claim
357 words
An active matrix type liquid crystal display device including a peripheral circuit portion and a pixel portion comprising: at least a first inverted stagger type thin film transistor formed in the pixel portion; said first inverted stagger type thin film transistor comprising: a first gate electrode formed on an insulating surface; a first gate insulating film formed on the first gate electrode; a first semiconductor film formed on the first gate insulating film; a first source region and a first drain region formed in the first semiconductor film; a first channel region formed between the first source region and the first drain region; at least a CMOS transistor formed in the peripheral circuit portion; an n-type second inverted stagger type thin film transistor and a p-type third inverted stagger type thin film transistor formed in the CMOS transistor; said n-type second inverted stagger type thin film transistor comprising: a second gate electrode formed on the insulating surface; a second gate insulating film formed on the second gate electrode; a second semiconductor film formed on the second gate insulating film; a second source region and a second drain region formed in the second semiconductor film; a second channel region formed between the second source region and the second drain region; at least an LDD region formed over the second gate electrode in the second semiconductor film, said LDD region being formed between the second source region and the second channel region or between the second channel region and the second drain region, said p-type third inverted stagger type thin film transistor comprising: a third gate electrode formed on the insulating surface; a third gate insulating film formed on the third gate electrode; a third semiconductor film formed on the third gate insulating film; a third source region and a third drain region formed in the third semiconductor film; a third channel region formed between the third source region and the third drain region, wherein the n-type second inverted stagger type thin film transistor includes the LDD region while neither the first inverted stagger type thin film transistor nor the p-type third inverted stagger type includes an LDD region.
Claim 30
Dependent Claim
357 words
An active matrix type liquid crystal display device including a peripheral circuit portion and a pixel portion comprising: at least a first inverted stagger type thin film transistor formed in the pixel portion; said first inverted stagger type thin film transistor comprising: a first gate electrode formed on an insulating surface; a first gate insulating film formed on the first gate electrode; a first semiconductor film formed on the first gate insulating film; a first source region and a first drain region formed in the first semiconductor film; a first channel region formed between the first source region and the first drain region; at least a CMOS transistor formed in the peripheral circuit portion; an n-type second inverted stagger type thin film transistor and a p-type third inverted stagger type thin film transistor formed in the CMOS transistor; said n-type second inverted stagger type thin film transistor comprising: a second gate electrode formed on the insulating surface; a second gate insulating film formed on the second gate electrode; a second semiconductor film formed on the second gate insulating film; a second source region and a second drain region formed in the second semiconductor film; a second channel region formed between the second source region and the second drain region; at least an LDD region formed over the second gate electrode in the second semiconductor film, said LDD region being formed between the second source region and the second channel region or between the second channel region and the second drain region, said p-type third inverted stagger type thin film transistor comprising: a third gate electrode formed on the insulating surface; a third gate insulating film formed on the third gate electrode; a third semiconductor film formed on the third gate insulating film; a third source region and a third drain region formed in the third semiconductor film; a third channel region formed between the third source region and the third drain region, wherein the n-type second inverted stagger type thin film transistor includes the LDD region while neither the first inverted stagger type thin film transistor nor the p-type third inverted stagger type includes an LDD region.
Claim 31
Dependent Claim
14 words
A device according to claim 22, wherein said insulating surface is a buffer layer.
Claim 32
Dependent Claim
19 words
A device according to claim 22, wherein each of the first, second and third semiconductor films comprises crystalline silicon.
References Cited (Backward Citations)
US5250835A
Cited
US5323042A
Cited
US5434441A
Cited
US5712495A
Cited
US5856689A
Cited
JPH0945930A
Cited
US5834797A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-26 | 2004-06-26 | 2004-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-26 | 2008-06-26 | 2008-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-26 | 2012-06-26 | 2012-12-26 | $7700.00 | Window Closed / Lapsed |