US6476447B1
Expired / Lapsed
US
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Active matrix display device including a transistor
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2000-09-12
•
Granted: 2002-11-05
•
Expires: 2020-09-12
Abstract
Abstract A transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, of the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric fields is applied to these offset regions from the gate electrode.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Akira Mase
- 👤 Masaaki Hiroki
- 👤 Yasuhiko Takemura
- 👤 Hongyong Zhang
- 👤 Hideki Uochi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/6737; H10D30/6739; H10D86/00; H10D86/40; H10D86/441; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/13624; G02F1/136245; G09; G09G; G09G2300/00; G09G2300/08; G09G2300/0809; G09G2300/0823; Y; Y10; Y10S; Y10S148/00; Y10S148/161; Y10S148/163
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
242 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with a first oxide layer interposed therebetween, said first oxide layer comprising an oxidized surface of said metal containing layer, and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors; a first wiring formed over said substrate; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, wherein said second wiring is connected to said first wiring through said contact hole, wherein said second wiring is connected to said pair of N-channel and P-channel thin film transistors, and wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 2
Dependent Claim
242 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with a first oxide layer interposed therebetween, said first oxide layer comprising an oxidized surface of said metal containing layer, and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors; a first wiring formed over said substrate; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, wherein said second wiring is connected to said first wiring through said contact hole, wherein said second wiring is connected to said pair of N-channel and P-channel thin film transistors, and wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 3
Dependent Claim
19 words
An active matrix display device according to claim 1 wherein said pixel electrode comprises a conductive transplant oxide film.
Claim 4
Dependent Claim
21 words
An active matrix display device according to claim 1 wherein said first oxide layer has a thickness less than 1000 Å.
Claim 5
Dependent Claim
259 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with an oxide film interposed therebetween, wherein said metal containing layer comprises a material selected from the group consisting of aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride, and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors; a first wiring formed over said substrate; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, wherein said second wiring is connected to said first wiring through said contact hole, wherein said second wiring is connected to said pair of N-channel and P-channel thin film transistors, and wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 6
Dependent Claim
259 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with an oxide film interposed therebetween, wherein said metal containing layer comprises a material selected from the group consisting of aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride, and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors; a first wiring formed over said substrate; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, wherein said second wiring is connected to said first wiring through said contact hole, wherein said second wiring is connected to said pair of N-channel and P-channel thin film transistors, and wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 7
Dependent Claim
18 words
An active display device according to claim 4 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 8
Dependent Claim
21 words
An active matrix display device according to claim 4 wherein said first oxide layer has a thickness less than 1000 Å.
Claim 9
Dependent Claim
242 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with an anodic oxide layer interposed therebetween, said anodic oxide layer comprising an oxidized surface of said metal containing layer, and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors; a first wiring formed over said substrate; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, wherein said second wiring is connected to said first wiring through said contact hole, wherein said second wiring is connected to said pair of N-channel and P-channel thin film transistors, and wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 10
Dependent Claim
242 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with an anodic oxide layer interposed therebetween, said anodic oxide layer comprising an oxidized surface of said metal containing layer, and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors; a first wiring formed over said substrate; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, wherein said second wiring is connected to said first wiring through said contact hole, wherein said second wiring is connected to said pair of N-channel and P-channel thin film transistors, and wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 11
Dependent Claim
19 words
An active matrix display device according to claim 7 wherein said pixel electrode comprises an conductor transparent oxide film.
Claim 12
Dependent Claim
21 words
An active matrix display device according to claim 7 wherein said first oxide layer has a thickness less than 1000 Å.
Claim 13
Dependent Claim
207 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with a first oxide layer interposed therebetween, said first oxide layer comprising an oxidized surface of said metal containing layer, and a driving circuit formed over said substrate, said driving circuit comprising: a first wiring formed on the insulating surface; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, said second wiring connecting to said first wiring through said contact hole, wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 14
Dependent Claim
207 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with a first oxide layer interposed therebetween, said first oxide layer comprising an oxidized surface of said metal containing layer, and a driving circuit formed over said substrate, said driving circuit comprising: a first wiring formed on the insulating surface; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, said second wiring connecting to said first wiring through said contact hole, wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 15
Dependent Claim
19 words
An active matrix display device according to claim 10 wherein said pixel electrode comprises a conductor transparent oxide film.
Claim 16
Dependent Claim
21 words
An active matrix display device according to claim 10 wherein said first oxide layer has a thickness less than 1000 Å.
Claim 17
Dependent Claim
225 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with a first oxide layer interposed therebetween, wherein said metal containing layer comprises a material selected from the group consisting of aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride, and a driving circuit formed over said substrate, said driving circuit comprising: a first wiring formed on the insulating surface; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, said second wiring connecting to said first wiring through said contact hole, wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 18
Dependent Claim
225 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with a first oxide layer interposed therebetween, wherein said metal containing layer comprises a material selected from the group consisting of aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride, and a driving circuit formed over said substrate, said driving circuit comprising: a first wiring formed on the insulating surface; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, said second wiring connecting to said first wiring through said contact hole, wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 19
Dependent Claim
19 words
An active matrix display device according to claim 13 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 20
Dependent Claim
21 words
An active matrix display device according to claim 13 wherein said first oxide layer has a thickness less than 1000 Å.
Claim 21
Dependent Claim
204 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with an anodic oxide layer interposed therebetween, said anodic oxide layer comprising an oxidized surface of said metal containing layer, and a driving circuit formed over said substrate, said driving circuit comprising: a first wiring formed on the insulating surface; an oxide layer formed on said first wiring; a contact hole formed in said oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said oxide layer, said second wiring connecting to said first wiring through said contact hole, wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 22
Dependent Claim
204 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with an anodic oxide layer interposed therebetween, said anodic oxide layer comprising an oxidized surface of said metal containing layer, and a driving circuit formed over said substrate, said driving circuit comprising: a first wiring formed on the insulating surface; an oxide layer formed on said first wiring; a contact hole formed in said oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said oxide layer, said second wiring connecting to said first wiring through said contact hole, wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 23
Dependent Claim
19 words
An active matrix display device according to claim 16 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 24
Dependent Claim
21 words
An active matrix display device according to claim 16 wherein said anodic oxide layer has a thickness less than 1000 Å.
Claim 25
Dependent Claim
243 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a crystalline semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with a first oxide layer interposed therebetween, said first oxide layer comprising an oxidized surface of said metal containing layer, and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors; a first wiring formed over said substrate; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, wherein said second wiring is connected to said first wiring through said contact hole, wherein said second wiring is connected to said pair of N-channel and P-channel thin film transistors, and wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 26
Dependent Claim
243 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a crystalline semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with a first oxide layer interposed therebetween, said first oxide layer comprising an oxidized surface of said metal containing layer, and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors; a first wiring formed over said substrate; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, wherein said second wiring is connected to said first wiring through said contact hole, wherein said second wiring is connected to said pair of N-channel and P-channel thin film transistors, and wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 27
Dependent Claim
19 words
An active matrix display device according to claim 19 wherein an pixel electrode comprises a conductive transparent oxide film.
Claim 28
Dependent Claim
21 words
An active matrix display device according to claim 19 wherein said first oxide layer has a thickness less than 1000 Å.
Claim 29
Dependent Claim
208 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a crystalline semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with a first oxide layer interposed therebetween, said first oxide layer comprising an oxidized surface of said metal containing layer, and a driving circuit formed over said substrate, said driving circuit comprising: a first wiring formed on the insulating surface; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, said second wiring connecting to said first wiring through said contact hole, wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 30
Dependent Claim
208 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a crystalline semiconductor layer, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a metal containing layer and a portion of said pixel electrode with a first oxide layer interposed therebetween, said first oxide layer comprising an oxidized surface of said metal containing layer, and a driving circuit formed over said substrate, said driving circuit comprising: a first wiring formed on the insulating surface; a second oxide layer formed on said first wiring; a contact hole formed in said second oxide layer in which a contact portion of said first wiring is exposed; and a second wiring formed over said second oxide layer, said second wiring connecting to said first wiring through said contact hole, wherein a width of an upper portion of said contact hole is larger than that of a lower portion of said contact hole.
Claim 31
Dependent Claim
19 words
An active matrix display device according to claims 22 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 32
Dependent Claim
21 words
An active matrix display device according to claim 22 wherein said first oxide layer has a thickness less than 1000 Å.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-11-04 | 2006-05-06 | 2006-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-11-04 | 2010-05-06 | 2010-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-11-04 | 2014-05-06 | 2014-11-05 | $7700.00 | Window Closed / Lapsed |