US5770469A — Method for forming semiconductor structure using …

Claim 1

Independent Claim 118 words

On a substrate of a wafer, a method for fabricating a semiconductor structure utilizing doped silicate glass, comprising the step of: forming a modulation doped silicate glass structure over a first layer of said wafer by depositing at least two alternating layers of heavily-doped silicate glass and lightly-doped silicate glass over said first layer, wherein said heavily-doped silicate glass layer and said lightly-doped silicate mass layer are deposited and reflowed substantially simultaneously at a temperature of about 650° C. to about 800° C. and wherein said heavily-doped silicate glass layer and said lightly-doped silicate glass layer of said modulation doped silicate glass structure are permitted to remain in a modulated, non-homogenous state after said semiconductor structure is fabricated.

Claim 2

Dependent Claim 118 words

On a substrate of a wafer, a method for fabricating a semiconductor structure utilizing doped silicate glass, comprising the step of: forming a modulation doped silicate glass structure over a first layer of said wafer by depositing at least two alternating layers of heavily-doped silicate glass and lightly-doped silicate glass over said first layer, wherein said heavily-doped silicate glass layer and said lightly-doped silicate mass layer are deposited and reflowed substantially simultaneously at a temperature of about 650° C. to about 800° C. and wherein said heavily-doped silicate glass layer and said lightly-doped silicate glass layer of said modulation doped silicate glass structure are permitted to remain in a modulated, non-homogenous state after said semiconductor structure is fabricated.

Claim 3

Dependent Claim 16 words

The method of claim 1 wherein said first layer represents a device layer of said wafer.

Claim 4

Dependent Claim 26 words

The method of claim 2 wherein said modulation doped silicate glass structure represents an insulating structure between said device layer and a subsequently deposited metallization layer.

Claim 5

Dependent Claim 27 words

The method of claim 1 wherein said heavily-doped silicate glass and said lightly-doped silicate glass comprise glass doped with both a first dopant and a second dopant.

Claim 6

Dependent Claim 147 words

On a substrate of a wafer, a method for fabricating a semiconductor structure utilizing doped silicate glass, comprising the step of: forming a modulation doped silicate glass structure over a first layer of said wafer by depositing at least two alternating layers of heavily-doped silicate glass and lightly-doped silicate glass over said first layer, wherein said heavily-doped silicate glass and said lightly-doped silicate glass comprise glass doped with both a first dopant and a second dopant, including: injecting with a first injector a first dopant source into a first sector of a chemical vapor deposition reactor; injecting with a second injector a second dopant source into a second sector of said chemical vapor deposition reactor; and depositing said first dopant and said second dopant on said wafer by alternately exposing said wafer to said first sector and to said second sector of said chemical vapor deposition reactor.

Claim 7

Dependent Claim 147 words

On a substrate of a wafer, a method for fabricating a semiconductor structure utilizing doped silicate glass, comprising the step of: forming a modulation doped silicate glass structure over a first layer of said wafer by depositing at least two alternating layers of heavily-doped silicate glass and lightly-doped silicate glass over said first layer, wherein said heavily-doped silicate glass and said lightly-doped silicate glass comprise glass doped with both a first dopant and a second dopant, including: injecting with a first injector a first dopant source into a first sector of a chemical vapor deposition reactor; injecting with a second injector a second dopant source into a second sector of said chemical vapor deposition reactor; and depositing said first dopant and said second dopant on said wafer by alternately exposing said wafer to said first sector and to said second sector of said chemical vapor deposition reactor.

Claim 8

Dependent Claim 25 words

The method of claim 5 wherein said depositing step comprises the step of linearly moving said wafer through said first sector and said second sector.

Claim 9

Dependent Claim 28 words

The method of claim 5 wherein said depositing step comprises the step of moving said wafer through said first sector and said second sector in a circular path.

Claim 10

Dependent Claim 131 words

The method of claim 5 wherein said step of forming said modulation doped silicate glass structure further comprises the steps of: injecting with a third injector said first dopant source into a third sector of a chemical vapor deposition reactor, said third sector being physically located adjacent said second sector and separated from said first sector by said second sector; and injecting with a fourth injector said second dopant source into a fourth sector of said chemical vapor deposition reactor, said fourth sector being physically located adjacent said third sector and separated from said second sector by said third sector, wherein said step of depositing said first dopant and said second dopant on said wafer further comprises the step of moving said wafer through said third sector and said fourth sector.

Claim 11

Dependent Claim 17 words

The method of claim 4 wherein said first dopant is phosphorous and said second dopant is boron.

Claim 12

Dependent Claim 50 words

The method of claim 9 wherein said heavily-doped silicate glass is at least about 4 weight percent in boron and at least about 7 weight percent in phosphorous, said lightly-doped silicate glass is at most about 4 weight percent in boron and at most about 5 weight percent in phosphorous.

Claim 13

Dependent Claim 37 words

The method of claim 10 wherein said first layer represents a device layer of said wafer and said modulation doped silicate glass structure represents an insulating structure between said device layer and a subsequently deposited metallization layer.

Claim 14

Dependent Claim 50 words

The method of claim 9 wherein said heavily-doped silicate glass is at least about 4.5 weight percent in boron and at least about 9 weight percent in phosphorous, said lightly-doped silicate glass is at most about 3.5 weight percent in boron and at most about 3.5 weight percent in phosphorous.

Claim 15

Dependent Claim 24 words

The method of claim 9 wherein said heavily-doped silicate glass is about 5 weight percent in boron and about 9 weight percent in phosphorous.

Claim 16

Dependent Claim 22 words

The method of claim 9 wherein said wherein said depositing step is carried out at a deposition temperature of about 750° C.

Claim 17

Dependent Claim 25 words

The method of claim 4 wherein said first dopant and second dopant are selected from the group consisting essentially of boron, phosphorous, arsenic, and germanium.

Claim 18

Dependent Claim 74 words

The method of claim 4 wherein said step of forming said modulation doped silicate glass structure is performed in a thermally activated chemical vapor deposition chamber, mass flow controllers in said thermally activated chemical vapor deposition chamber individually controlling as a function of time the flow of a source material for said first dopant and the flow of a source material for said second dopant to create a modulation effect in said alternating layers.

Claim 19

Dependent Claim 74 words

The method of claim 4 wherein said step of forming said modulation doped silicate glass structure is performed in a plasma activated chemical vapor deposition chamber, mass flow controllers in said plasma activated chemical vapor deposition chamber individually controlling as a function of time the flow of a source material for said first dopant and the flow of a source material for said second dopant to create a modulation effect in said alternating layers.

Claim 20

Dependent Claim 23 words

The method of claim 4 further comprising the step of forming a relatively chemically inert layer above said modulation doped silicate glass structure.

Claim 21

Dependent Claim 20 words

The method of claim 1 wherein said depositing step is carried out at a deposition temperature of about 750° C.

Claim 22

Dependent Claim 196 words

On a substrate of a wafer, a method for forming a modulation doped silicate glass structure of a semiconductor device, comprising: alternately exposing said wafer to a first dopant source and a second dopant source to respectively deposit a first doped silicate glass layer of said modulation doped silicate glass structure and a second doped silicate glass layer of said modulation doped silicate glass structure over said wafer, said first doped silicate glass layer being doped with a first dopant from said first dopant source and having a first dopant concentration level, said second doped silicate glass layer being doped with a second dopant from said second dopant source and having a second dopant concentration level, wherein a dopant level of said first dopant in said first doped silicate glass layer is lower than said first dopant concentration level in said second doped silicate glass layer and a dopant level of said second dopant in said first doped silicate glass layer is lower than said second dopant concentration level in said second doped silicate glass layer, said first dopant and said second dopant being maximized in a same spatial regime after said semiconductor device is fabricated.

Claim 23

Dependent Claim 196 words

On a substrate of a wafer, a method for forming a modulation doped silicate glass structure of a semiconductor device, comprising: alternately exposing said wafer to a first dopant source and a second dopant source to respectively deposit a first doped silicate glass layer of said modulation doped silicate glass structure and a second doped silicate glass layer of said modulation doped silicate glass structure over said wafer, said first doped silicate glass layer being doped with a first dopant from said first dopant source and having a first dopant concentration level, said second doped silicate glass layer being doped with a second dopant from said second dopant source and having a second dopant concentration level, wherein a dopant level of said first dopant in said first doped silicate glass layer is lower than said first dopant concentration level in said second doped silicate glass layer and a dopant level of said second dopant in said first doped silicate glass layer is lower than said second dopant concentration level in said second doped silicate glass layer, said first dopant and said second dopant being maximized in a same spatial regime after said semiconductor device is fabricated.

Claim 24

Dependent Claim 33 words

The method of claim 20 wherein said first doped silicate glass layer and said second doped silicate glass layer are deposited at a deposition temperature of about 500° C. to about 850° C.

Claim 25

Dependent Claim 29 words

The method of claim 20 wherein said first doped silicate glass layer and said second doped silicate glass layer are deposited at a deposition temperature of about 750° C.

Claim 26

Dependent Claim 33 words

The method of claim 20 wherein said first doped silicate glass layer and said second doped silicate glass layer are deposited at a deposition temperature of about 650° C. to about 800° C.

Claim 27

Dependent Claim 26 words

The method of claim 20 wherein said modulation doped silicate glass structure represents an insulating structure between a device layer and a subsequently deposited metallization layer.

Claim 28

Dependent Claim 29 words

The method of claim 20 wherein said first doped silicate glass and said second doped silicate glass comprise glass doped with both a first dopant and a second dopant.

Claim 29

Dependent Claim 97 words

The method of claim 25 wherein said step of alternately exposing said wafer to said first dopant source and said second dopant source comprises the steps of: injecting with a first injector said first dopant source into a first sector of a chemical vapor deposition reactor; injecting with a second injector said second dopant source into a second sector of said chemical vapor deposition reactor; and depositing said first dopant and said second dopant on said wafer by alternately exposing said wafer to said first sector and to said second sector of said chemical vapor deposition reactor.

Claim 30

Dependent Claim 25 words

The method of claim 25 wherein said depositing step comprises the step of linearly moving said wafer through said first sector and said second sector.

Claim 31

Dependent Claim 28 words

The method of claim 25 wherein said depositing step comprises the step of moving said wafer through said first sector and said second sector in a circular manner.

Claim 32

Dependent Claim 138 words

The method of claim 25 wherein said step of alternately exposing said wafer to a first dopant source and a second dopant source further comprises the steps of: injecting with a third injector said first dopant source into a third sector of a chemical vapor deposition reactor, said third sector being physically located adjacent said second sector and separated from said first sector by said second sector; and injecting with a fourth injector said second dopant source into a fourth sector of said chemical vapor deposition reactor, said fourth sector being physically located adjacent said third sector and separated from said second sector by said third sector, wherein said step of depositing said first dopant and said second dopant on said wafer further comprises the step of moving said wafer through said third sector and said fourth sector.

Claim 33

Dependent Claim 17 words

The method of claim 20 wherein said first dopant is phosphorous and said second dopant is boron.

Claim 34

Dependent Claim 52 words

The method of claim 30 wherein said first doped silicate glass is at least about 4 weight percent in boron and at least about 7 weight percent in phosphorous, said second doped silicate glass is at most about 4 weight percent in boron and at most about 5 weight percent in phosphorous.

Claim 35

Dependent Claim 29 words

The method of claim 31 wherein said modulation doped silicate glass structure represents an insulating structure between a device layer of said wafer and a subsequently deposited metallization layer.

Claim 36

Dependent Claim 51 words

The method of claim 30 wherein said first doped-silicate glass is at least about 4.5 weight percent in boron and at least about 9 weight percent in phosphorous, said second doped silicate glass is at most about 3.5 weight percent in boron and at most about 3.5 weight percent in phosphorous.

Claim 37

Dependent Claim 25 words

The method of claim 30 wherein said first doped silicate glass is about 5 weight percent in boron and about 9 weight percent in phosphorous.

Claim 38

Dependent Claim 25 words

The method of claim 25 wherein said first dopant and second dopant are selected from the group consisting essentially of boron, phosphorous, arsenic, and germanium.

Claim 39

Dependent Claim 74 words

The method of claim 25 wherein said step of forming said modulation doped silicate glass structure is performed in a thermally activated chemical vapor deposition chamber, mass flow controllers in said thermally activated chemical vapor deposition chamber individually controlling as a function of time the flow of a source material for said first dopant and the flow of a source material for said second dopant to create a modulation effect in said alternating layers.

Claim 40

Dependent Claim 74 words

The method of claim 25 wherein said step of forming said modulation doped silicate glass structure is performed in a plasma activated chemical vapor deposition chamber, mass flow controllers in said plasma activated chemical vapor deposition chamber individually controlling as a function of time the flow of a source material for said first dopant and the flow of a source material for said second dopant to create a modulation effect in said alternating layers.

Claim 41

Dependent Claim 23 words

The method of claim 25 further comprising the step of forming a relatively chemically inert layer above said modulation doped silicate glass structure.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2001-06-22	2001-12-22	2002-06-23	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2005-06-22	2005-12-22	2006-06-23	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2009-06-22	2009-12-22	2010-06-23	$7700.00	Window Closed / Lapsed

Method for forming semiconductor structure using modulation doped silicate glasses

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