Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To dispense with a reflowing treatment by setting the CVD reaction temperature at a high temperature of 700-1,000 deg.C in the case of the manufacture of the insulating films consisting of borophosphate glass. CONSTITUTION:Insulating films 6 and 9 consisting of borophosphate glass are formed on a semiconductor substrate. At that time, the formation is performed by setting the CVD reaction temperature for growing the borophosphate glass to a temperature range of 700-1,000 deg.C. Whereupon, as the reaction temperature is high, a reflow of parts of these insulating films 6 and 9, which are grown at the same time as the deposition, that is, the growth is proceeded, is proceeded. Therefore, in the insulating film 6, a flattening of the insulating film 6 is contrived at the steep stepped parts on both sides of a gate electrode 4 by the reflow at well as the growth. Thus, to execute a reflowing treatment anew becomes unnecessary.

Inventors

• 👤 Hisayuki Kato
• 👤 久幸 加藤
• 👤 Hideo Sakai
• 👤 秀男 坂井
• 👤 Takeo Yoshimi
• 👤 吉見　武夫

Bibliographic Details