US4972251A
Expired / Lapsed
US
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Multilayer glass passivation structure and method for forming the same
Assignee: National Semiconductor Corp
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Filing: 1985-08-14
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Granted: 1990-11-20
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Expires: 2005-08-14
Abstract
Abstract A thick glass passivation layer comprises an alternating sequence of structurally dissimilar but chemically compatible layers of material over the surface of a substrate, so as to provide sufficient elasticity to compensate for thermal expansion differences that would otherwise crack causing in thick monolithic films. A first layer comprises glass that has been deposited over the surface of the structure using chemical vapor deposition. A second layer of the passivating glass material is then provided on the substrate using a spinning technique. The chemical vapor deposition and spun layers continue to be applied in an alternating fashion until a film having the desired thickness is formed. Each chemical vapor deposition layer provides an elastic cushion for the subsequently spun layers. The spun layers allows a planar topography to be maintained without the need for high temperatures.
Inventors
- 👤 William I. Lehrer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 00:12
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/147; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
100 words
A semiconductor structure having a relatively thick layer of glass thereon to passivate the surface of the structure, wherein said thick layer of glass is comprised of a sequence of alternating first and second thin layers of glass with each of said thin layers of glass having substantially the same chemical identity as adjacent thin layers of glass and differing from said adjacent layers in that said first thin layers of glass function to provide a substantially planar topography to said relatively thick layer of glass and said second layers of glass have greater elasticity than said first thin layers.
Claim 2
Dependent Claim
100 words
A semiconductor structure having a relatively thick layer of glass thereon to passivate the surface of the structure, wherein said thick layer of glass is comprised of a sequence of alternating first and second thin layers of glass with each of said thin layers of glass having substantially the same chemical identity as adjacent thin layers of glass and differing from said adjacent layers in that said first thin layers of glass function to provide a substantially planar topography to said relatively thick layer of glass and said second layers of glass have greater elasticity than said first thin layers.
Claim 3
Dependent Claim
31 words
The semiconductor structure of claim 2 wherein the structure includes a semiconductor substrate having a patterned metal layer with a thickness of about 3,000-12,000 angstroms on the surface of said substrate.
Claim 4
Dependent Claim
27 words
The semiconductor structure of claim 1 wherein said alternating second and first thin layers of glass are respectively formed by chemical vapor deposition and spin coating processes.
Claim 5
Dependent Claim
92 words
A semiconductor structure, comprising: a semiconductor substrate; a patterned metal layer on the surface of said substrate; a first series of glass layers disposed over said substrate and said metal layer and providing a substantially planar surface; and a second series of glass layers respectively interposed between the layers of said first series, the glass layers of said second series having greater elasticity than the layers of said first series to compensate for differences in thermal expansion of the semiconductor substrate, the metal layer and the glass layers of the first series.
Claim 6
Dependent Claim
92 words
A semiconductor structure, comprising: a semiconductor substrate; a patterned metal layer on the surface of said substrate; a first series of glass layers disposed over said substrate and said metal layer and providing a substantially planar surface; and a second series of glass layers respectively interposed between the layers of said first series, the glass layers of said second series having greater elasticity than the layers of said first series to compensate for differences in thermal expansion of the semiconductor substrate, the metal layer and the glass layers of the first series.
Claim 7
Dependent Claim
28 words
The structure of claim 4 wherein one of the glass layers of said second series is disposed between the semiconductor substrate and the first series of glass layers.
Claim 8
Dependent Claim
21 words
The structure of claim 4 wherein the glass layers of said first and second series have essentially the same chemical identity.
Claim 9
Dependent Claim
30 words
The semiconductor structure of claim 4 wherein the glass layers in said first series are spun layers and the glass layers in said second series are chemical vapor deposition layers.
Claim 10
Dependent Claim
110 words
A semiconductor structure having a patterned metal layer and a passivated surface over said metal layer which is produced by the process of: forming a first layer of an oxide material on the surface of the semiconductor structure over said patterned metal layer; spin-coating a second layer of oxide material on said first layer; depositing a third layer of oxide material on said second layer by means other than a spin-coating process; spin-coating a fourth layer of oxide material on said second layer; and alternately repeating said depositing and spin-coating steps until a substantially planar surface is formed over said metal layer without affecting the pattern of said metal layer.
Claim 11
Dependent Claim
110 words
A semiconductor structure having a patterned metal layer and a passivated surface over said metal layer which is produced by the process of: forming a first layer of an oxide material on the surface of the semiconductor structure over said patterned metal layer; spin-coating a second layer of oxide material on said first layer; depositing a third layer of oxide material on said second layer by means other than a spin-coating process; spin-coating a fourth layer of oxide material on said second layer; and alternately repeating said depositing and spin-coating steps until a substantially planar surface is formed over said metal layer without affecting the pattern of said metal layer.
Claim 12
Dependent Claim
26 words
The semiconductor structure of claim 8 wherein at least one of said first and third layers is formed by means of a chemical vapor deposition process.
Claim 13
Dependent Claim
114 words
A semiconductor structure having a patterned metal layer and a relatively thick layer of glass on its surface and produced by the process of: (a) depositing a relatively thin layer of glass on the surface of the structure and over said metal layer by means of chemical vapor deposition; (b) coating said thin layer with a second layer of glass using a process other than chemical vapor deposition that ultimately provides said thick layer of glass with a substantially planar surface without affecting the pattern of said metal layer; and (c) sequentially repeating steps (a) and (b) as required to build alternating layers of glass to a planar topology having a desired cumulative thickness.
Claim 14
Dependent Claim
114 words
A semiconductor structure having a patterned metal layer and a relatively thick layer of glass on its surface and produced by the process of: (a) depositing a relatively thin layer of glass on the surface of the structure and over said metal layer by means of chemical vapor deposition; (b) coating said thin layer with a second layer of glass using a process other than chemical vapor deposition that ultimately provides said thick layer of glass with a substantially planar surface without affecting the pattern of said metal layer; and (c) sequentially repeating steps (a) and (b) as required to build alternating layers of glass to a planar topology having a desired cumulative thickness.
Claim 15
Dependent Claim
22 words
The semiconductor structure of claim 1 wherein the second layer is coated on the first layer by means of a spinning process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-19 | 1994-05-21 | 1994-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-19 | 1998-05-21 | 1998-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-19 | 2002-05-21 | 2002-11-20 | $7700.00 | Window Closed / Lapsed |