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US5286681A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for manufacturing semiconductor device having a self-planarizing film

Assignee: Alcan Tech Co Inc
•
Filing: 1992-06-19
•
Granted: 1994-02-15
•
Expires: 2012-06-19
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Abstract

Abstract The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a film used for flattening a substrate surface having unevenness in a manufacturing process of a semiconductor device, and has for its object to provide a method of manufacturing a semiconductor device for making it possible to flatten a film by processing at a lower temperature without deteriorating the film quality. The present invention is structured including a process of depositing a film composed of BPSG or PSG on a substrate surface having unevenness, a process of depositing a SiO 2 film or depositing a film composed of BPSG or PSG having concentration lower than phosphorus concentration or boron concentration in the film or a SiO 2 film on the film, and a process of melting and fluidizing these films so as to flatten them by applying heat treatment.

Inventors

  • 👤 Kazuo Maeda
  • 👤 Bunya Matsui
  • 👤 Yuko Nishimoto

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 09:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 97 words
A method for manufacturing a semiconductor device, consisting essentially of the steps of: forming a film having a self-flattening property on an uneven surface of a substrate; then directly depositing a SiO 2 film doped with impurities to cover said self-flattening film; then directly depositing a moisture resistant film to cover said doped SiO 2 film; and melting and fluidizing said self-flattening film, said doped SiO 2 film and said moisture resistant film by applying heat treatment so as to flatten the surface thereof, whereby the films flow into one another to form a unitary whole film.
Claim 2
Independent Claim 97 words
A method for manufacturing a semiconductor device, consisting essentially of the steps of: forming a film having a self-flattening property on an uneven surface of a substrate; then directly depositing a SiO 2 film doped with impurities to cover said self-flattening film; then directly depositing a moisture resistant film to cover said doped SiO 2 film; and melting and fluidizing said self-flattening film, said doped SiO 2 film and said moisture resistant film by applying heat treatment so as to flatten the surface thereof, whereby the films flow into one another to form a unitary whole film.
Claim 3
Dependent Claim 27 words
A method for manufacturing a semiconductor device according to claim 1, wherein said self-flattening film is formed by an atmospheric pressure CVD method utilizing TEOS/O 3 .
Claim 4
Dependent Claim 23 words
A method for manufacturing a semiconductor device according to claim 1, wherein said doped SiO 2 film is a PSG or BPSG film.
Claim 5
Dependent Claim 40 words
A method for manufacturing a semiconductor device according to claim 1, wherein said moisture resistant film is a SiO 2 film or a SiO 2 film doped with impurities having lower concentration than that of said doped SiO 2 film.
Claim 6
Dependent Claim 41 words
A method for manufacturing a semiconductor device according to claim 1, wherein after depositing said doped SiO 2 film, the step of depositing said moisture resistant film is effected in a state that the device is not exposed to the atmosphere.
Claim 7
Dependent Claim 29 words
A method for manufacturing a semiconductor device according to claim 1, wherein the thickness of said moisture resistant film is thinner than that of said doped SiO 2 film.

References Cited (Backward Citations)

US4985373A Cited
US4474831A Cited
US4743564A Cited
US4966865A Cited
EP0360992A2 Cited
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EP0421203A1 Cited
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US5094984A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-02-14 1997-08-16 1998-02-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-02-14 2001-08-16 2002-02-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-02-14 2005-08-16 2006-02-15 $7700.00 Window Closed / Lapsed

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