Manufacture of thin-film semiconductor device

Abstract

Abstract PURPOSE:To obtain excellent electrical connection through an opening in a transparent conductive film by forming an silicon nitride film onto the transparent conductive film through a protective insulating film, shaping the opening section to the pattern of a gentle cross section and selectively applying and forming a conductive metallic film from the upper section of the silicon nitride film. CONSTITUTION:Chemical dry etching is conducted, using an insulating film 13 having an etching rate slower than a nitride film as a protective insulating film between a transparent conductive film 2 and an silicon nitride film 4. The silicon nitride 4 as an upper layer film progresses at a faster rate in etching, and etching advances in an isotropic manner because of chemical etching, thus acquiring the opening 8 of a wide-mouthed sectional pattern having a gentle inclination. Etching selectively progresses in response to substances in chemical etching, thus resulting in no damage to the transparent conductive film 2. Accordingly, the inside of the opening 8 is filled with the material of a conductive metallic film 17 for an interelectrode wiring optionally deposited and shaped from the upper section of the silicon nitride film 4 without any trouble, and the film 17 can be employed as an effective connection section to the transparent conductive film 2.

Inventors

• 👤 Satoko Ookawano
• 👤 大川野　里子
• 👤 Yoshiya Takeda
• 👤 悦矢 武田
• 👤 Yutaka Minamino
• 👤 裕 南野

Bibliographic Details