US3864217A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a semiconductor device
Assignee: NEC Corp
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Filing: 1974-01-21
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Granted: 1975-02-04
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Expires: 1994-01-21
Abstract
Abstract A method of fabricating a semiconductor device is disclosed, in which an insulating film is formed on one main surface of a semiconductor substrate and a plurality of openings are formed in the insulating film to permit connnection to the substrate surface. Thereafter, a thin film of the same semiconductor material as the material of the semiconductor substrate is deposited on the insulating film and on the exposed areas of the substrate surface. A metallic film is then deposited over the thin film of semiconductor material. The metallic film and the semiconductor thin film are then selectively converted to their respective oxides, through an anodic oxidation process to form insulating regions between the interconnections in said device. Thereafter, those portions of the metallic film and the semiconductor thin film which have not been converted to their oxides are alloyed with each other by heating the device to form the interconnections and ohmic contacts in the semiconductor device. In an alternative embodiment of the invention, the heating process is carried out prior to the process of selective anodic oxidation with an equally satisfactory result.
Inventors
- 👤 Koichiro Takahata
- 👤 Hiroshi Shiba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:15
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
127 words
A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WHICH DEVICE INCLUDES A SEMICONDUCTOR SUBSTRATE AND AN INSULATING FILM COVERING AT LEAST ONE MAJOR SURFACE OF SAID SUBSTRATE INCLUDING THE STEPS OF: FORMING OPENINGS IN SAID INSULATING FILM TO EXPOSE PORTIONS OF SAID MAJOR SURFACE OF SAID SUBSTRATE; FORMING A THIN FILM OF THE SAME SEMICONDUCTOR MATERIAL AS SAID SUBSTRATE OVER SAID INSULATING LAYER AND SAID EXPOSED PORTIONS OF SAID SUBSTRATE; FORMING A METALLIC FILM OVER SAID THIN FILM OF SEMICONDUCTOR METERIAL; SELECTIVELY CONVERTING AT LEAST A PORTION OF THE MATERIAL OF SAID METALLIC FILM AND SAID SEMICONDUCTOR THIN FILM INTO THE OXIDES OF THEIR RESPECTIVE MATERIALS BY ANODIC OXIDATION; AND HEATING SAID DEVICE TO ALLOY AT LEAST A PORTION OF SAID METALLIC FILM WITH SAID SEMICONDUCTOR THIN FILM.
Claim 2
Independent Claim
127 words
A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WHICH DEVICE INCLUDES A SEMICONDUCTOR SUBSTRATE AND AN INSULATING FILM COVERING AT LEAST ONE MAJOR SURFACE OF SAID SUBSTRATE INCLUDING THE STEPS OF: FORMING OPENINGS IN SAID INSULATING FILM TO EXPOSE PORTIONS OF SAID MAJOR SURFACE OF SAID SUBSTRATE; FORMING A THIN FILM OF THE SAME SEMICONDUCTOR MATERIAL AS SAID SUBSTRATE OVER SAID INSULATING LAYER AND SAID EXPOSED PORTIONS OF SAID SUBSTRATE; FORMING A METALLIC FILM OVER SAID THIN FILM OF SEMICONDUCTOR METERIAL; SELECTIVELY CONVERTING AT LEAST A PORTION OF THE MATERIAL OF SAID METALLIC FILM AND SAID SEMICONDUCTOR THIN FILM INTO THE OXIDES OF THEIR RESPECTIVE MATERIALS BY ANODIC OXIDATION; AND HEATING SAID DEVICE TO ALLOY AT LEAST A PORTION OF SAID METALLIC FILM WITH SAID SEMICONDUCTOR THIN FILM.
Claim 3
Dependent Claim
104 words
A method as claimed in claim 1 in which portions of the materials of said metallic film and said thin film are selectively converted into their respective oxides by the following additional steps: forming a porous alumina film over said metallic film by a first anodic oxidation process; forming a mask over selected portions of the surface of said metallic film, said mask having apertures in selected areas to expose portions of the surface of said metallic film; and converting those portions of said metallic film and said semiconductor film underlying said exposed surface portions into their respective oxides by a second oxidation process.
Claim 4
Dependent Claim
115 words
A method as claimed in claim 1 in which portions of said metallic film and said semiconductor thin film ar selectively converted into their respective oxides by the following additional steps: forming a porous alumina film over said metallic film by a first anodic oxidation process; forming a mask over selected portions of the surface of said metallic film, said mask having apertures in selected areas; forming non-porous alumina layers underlying said apertures by a second anodic oxidation process; removing said mask; and converting those areas of said metallic film and said semiconductor film lying beneath surface areas which had been covered by said mask into their respective oxides by a third anodic oxidation process.
Claim 5
Dependent Claim
66 words
A method as claimed in claim 1 in which said thin film of the same material as said substrate is deposited on said insulating layer and said exposed areas of said substrate to form a film of 10 to 1,000 angstroms in thickness and in which a metal is deposited on said thin film to form a metallic layer of at least 0.5 microns in thickness.
Claim 6
Independent Claim
119 words
A method of fabricating a semiconductor device which device includes a semiconductor substrate and an insulating film covering at least one major surface of said substrate including the steps of: forming openings in said insulating film to expose portions of said major surface of said substrate; forming a thin film of the same semiconductor material as said substrate over said insuLating layer and the said exposed portions of said substrate; forming a metallic film over said thin film of semiconductor material; heating said device to alloy at least a portion of said metallic film with said semiconductor to form an alloyed film; and selectively converting at least a portion of said alloyed film into an insulator by anodic oxidation.
Claim 7
Independent Claim
119 words
A method of fabricating a semiconductor device which device includes a semiconductor substrate and an insulating film covering at least one major surface of said substrate including the steps of: forming openings in said insulating film to expose portions of said major surface of said substrate; forming a thin film of the same semiconductor material as said substrate over said insuLating layer and the said exposed portions of said substrate; forming a metallic film over said thin film of semiconductor material; heating said device to alloy at least a portion of said metallic film with said semiconductor to form an alloyed film; and selectively converting at least a portion of said alloyed film into an insulator by anodic oxidation.
Claim 8
Independent Claim
124 words
A method of fabricating an interconnecting structure for a semiconductor device which device includes a surface to which connection is to be made including the steps of: forming at least one insulating layer over said surface; forming apertures in said at least one insulating layer to expose portions of said surface; forming a layer of semiconductor material over said at least one insulating layer and exposed portions of said surface; forming a metallic layer over said layer of semiconductor material; selectively converting at least a portion of material of said metallic layer and said semiconductor layer into the oxides of their respective materials by anodic oxidation; and heating said device to alloy at least a portion of said metallic layer and said semiconductor layer.
Claim 9
Independent Claim
124 words
A method of fabricating an interconnecting structure for a semiconductor device which device includes a surface to which connection is to be made including the steps of: forming at least one insulating layer over said surface; forming apertures in said at least one insulating layer to expose portions of said surface; forming a layer of semiconductor material over said at least one insulating layer and exposed portions of said surface; forming a metallic layer over said layer of semiconductor material; selectively converting at least a portion of material of said metallic layer and said semiconductor layer into the oxides of their respective materials by anodic oxidation; and heating said device to alloy at least a portion of said metallic layer and said semiconductor layer.
Claim 10
Dependent Claim
56 words
A method as claimed in claim 6 wherein said at least one insulating layer is formed by the steps of: forming an insulating alumina layer over said surface; depositing a silicon oxide film over said alumina layer; and forming apertures through both said alumina layer and said silicon oxide layer to expose portions of said surface.
Claim 11
Dependent Claim
65 words
A method as claimed in claim 7 wherein said layer of semiconductor material is formed by depositing a thin film of silicon having a thickness of about 200 angstroms over said silicon oxide layer and the exposed portions of said surface and wherein said metallic layer is formed by depositing an aluminum layer of about 1.5 microns in thickness over said thin film of silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-03 | 1978-08-05 | 1979-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-03 | 1982-08-05 | 1983-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-03 | 1986-08-05 | 1987-02-04 | $7700.00 | Window Closed / Lapsed |