US3741880A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming electrical connections in a semiconductor integrated circuit
Assignee: NEC Corp
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Filing: 1970-10-22
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Granted: 1973-06-26
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Expires: 1990-10-22
Abstract
Abstract A METHOD OF FORMING ELECTRICAL CONNECTION IN SEMICONDUCTOR INTEGRATED XCIRCUIT DEVICE IN WHICH AN ANODIZABLE METALLIC MATERIAL SUCH AS ALUMINUM IS FORMED ON A SUBSTRATE. ANODIC OXIDATION IS THEN PERFORMED TO FROM A THIN POROUS OXIDE FILM OF THE METALLIC MATERIAL. THE SURFACE OF THE POROUS OXIDE FILM IS THEN SELECTIVELY COVERED WITH A PHOTORESIT. THE EXPOSED SURFACE OF THE METALLIC MATERIAL IS THEN ANODIZED TO FROM A NON-POROUS METALLIC OXIDE FILM, WHICH THEREAFTER SEVES AS A MASK DURING THE
Inventors
- 👤 H Shiba
- 👤 H Tsunemitsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6324; C; C25; C25D; C25D11/00; C25D11/02; C25D11/022; C25D11/04; H10P14/6304; H10P14/6314; H10P14/66; H10P14/665; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P95/00; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-25 | 1976-12-25 | 1977-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-25 | 1980-12-25 | 1981-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-25 | 1984-12-25 | 1985-06-26 | $7700.00 | Window Closed / Lapsed |