Patent US2359366A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4618878A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device having a multilayer wiring structure using a polyimide resin

Assignee: Toshiba Corp
•
Filing: 1984-06-15
•
Granted: 1986-10-21
•
Expires: 2004-06-15
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A semiconductor device having a multilayer wiring structure which comprises a semiconductor substrate, a first wiring layer deposited on said substrate, and a second wiring layer deposited on said first wiring layer with insulating layers disposed therebetween, wherein the insulating interlayer consists of an inorganic insulating layer and a polyimide-based resin film overlying the inorganic insulating layer. The thickness ratio of the polyimide-based resin film to the inorganic insulating film ranges from 0.1 to 0.5. A method of manufacturing a semiconductor device of a multilayer wiring structure wherein an opening is formed in the insulating interlayer to have a small step.

Inventors

  • 👤 Masaharu Aoyama
  • 👤 Masahiro Abe
  • 👤 Takashi Ajima
  • 👤 Toshio Yonezawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 17:45
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 105 words
A semiconductor device having a multilayer wiring structure which comprises a semiconductor substrate, a first wiring layer deposited on said substrate, and a second wiring layer deposited on said first wiring layer with an insulating interlayer disposed therebetween, wherein said insulating interlayer consisting essentially of an inorganic insulating layer as an underlying layer and a polyimide-based resin film as an overlying layer, wherein said inorganic insulating film has a thickness falling within a range between 0.5 μm and 1.5 μm, the ratio of a thickness of said polyimide-based resin film to that of said inorganic insulating film falling within a range between 0.1 and 0.5.
Claim 2
Dependent Claim 105 words
A semiconductor device having a multilayer wiring structure which comprises a semiconductor substrate, a first wiring layer deposited on said substrate, and a second wiring layer deposited on said first wiring layer with an insulating interlayer disposed therebetween, wherein said insulating interlayer consisting essentially of an inorganic insulating layer as an underlying layer and a polyimide-based resin film as an overlying layer, wherein said inorganic insulating film has a thickness falling within a range between 0.5 μm and 1.5 μm, the ratio of a thickness of said polyimide-based resin film to that of said inorganic insulating film falling within a range between 0.1 and 0.5.
Claim 3
Dependent Claim 34 words
A device according to claim 1, wherein said inorganic insulating film comprises a film selected from the group consisting of a silicon nitride film, a nitride-containing silicon oxide film, and a multilayer film thereof.
Claim 4
Dependent Claim 17 words
A device according to claim 2, wherein said inorganic insulating film comprises a chemical vapor deposition film.
Claim 5
Dependent Claim 18 words
A device according to claim 2, wherein said inorganic insulating film comprises a plasma chemical vapor deposition film.
Claim 6
Dependent Claim 24 words
A device according to claim 1, wherein said inorganic insulating film has a thickness falling within a range between 0.5 μm and 1.5 μm.
Claim 7
Dependent Claim 29 words
A device according to claim 1, wherein the ratio of a thickness of said polyimide-based resin film to that of said inorganic insulating film ranges between 0.2 and 0.4.
Claim 8
Dependent Claim 20 words
A device according to claim 1, wherein the polymide-based resin has a thermal decomposition temperature of 450° C. or more.

References Cited (Backward Citations)

US3926914A Cited
DE2401613A1 Cited
GB2027273A Cited
US4472726A Cited
US4507333A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-10-20 1990-04-21 1990-10-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-10-20 1994-04-21 1994-10-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-10-20 1998-04-21 1998-10-21 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag