US6166414A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electronic circuit
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1999-08-25
•
Granted: 2000-12-26
•
Expires: 2019-08-25
Abstract
Abstract An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
Inventors
- 👤 Minoru Miyazaki
- 👤 Akane Murakami
- 👤 Baochun Cui
- 👤 Mutsuo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; H10D86/00; H10D86/40; H10D86/441; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5524
Claims Analysis
Total Claims: 66
Claim 1
Independent Claim
234 words
A semiconductor device comprising: a peripheral circuit provided over a substrate; and an active matrix circuit provided over said substrate, said peripheral circuit comprising: a first semiconductor layer provided over said substrate in said peripheral circuit and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said active matrix circuit comprising: a second semiconductor layer provided over said substrate in said active matrix circuit and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween; and a pixel electrode provided over said substrate and connected with said second region being more conductive than said second lightly doped region, wherein said second lightly doped region does not overlap with said second gate electrode.
Claim 2
Dependent Claim
234 words
A semiconductor device comprising: a peripheral circuit provided over a substrate; and an active matrix circuit provided over said substrate, said peripheral circuit comprising: a first semiconductor layer provided over said substrate in said peripheral circuit and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said active matrix circuit comprising: a second semiconductor layer provided over said substrate in said active matrix circuit and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween; and a pixel electrode provided over said substrate and connected with said second region being more conductive than said second lightly doped region, wherein said second lightly doped region does not overlap with said second gate electrode.
Claim 3
Dependent Claim
236 words
A semiconductor device comprising: a driver thin film transistor provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate, said driver thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; and a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween, wherein said second lightly doped region does not overlap with said second gate electrode, and wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region.
Claim 4
Dependent Claim
236 words
A semiconductor device comprising: a driver thin film transistor provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate, said driver thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; and a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween, wherein said second lightly doped region does not overlap with said second gate electrode, and wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region.
Claim 5
Dependent Claim
260 words
A semiconductor device comprising: a driver comprising an n-channel thin film transistor and a p-channel thin film transistor which form a CMOS structure and are provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate; each of said n-channel thin film transistor and said p-channel thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; and a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween, wherein said second lightly doped region does not overlap with said second gate electrode, and wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region.
Claim 6
Dependent Claim
260 words
A semiconductor device comprising: a driver comprising an n-channel thin film transistor and a p-channel thin film transistor which form a CMOS structure and are provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate; each of said n-channel thin film transistor and said p-channel thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; and a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween, wherein said second lightly doped region does not overlap with said second gate electrode, and wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region.
Claim 7
Dependent Claim
263 words
A semiconductor device comprising: a driver comprising an n-channel thin film transistor and a p-channel thin film transistor which form a CMOS structure and are provided as an inverter over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate; each of said n-channel thin film transistor and said p-channel thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; and a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween, wherein said second lightly doped region does not overlap with said second gate electrode, and wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region.
Claim 8
Dependent Claim
263 words
A semiconductor device comprising: a driver comprising an n-channel thin film transistor and a p-channel thin film transistor which form a CMOS structure and are provided as an inverter over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate; each of said n-channel thin film transistor and said p-channel thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; and a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween, wherein said second lightly doped region does not overlap with said second gate electrode, and wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region.
Claim 9
Dependent Claim
308 words
A semiconductor device comprising: a driver thin film transistor provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate, said driver thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween; and a first contact being provided in contact with said first region being more conductive than said first lightly doped region, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween; and a second contact being provided in contact with said second region being more conductive than said second lightly doped region, wherein said second lightly doped region does not overlap with said second gate electrode, wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region through said second contact, and wherein at least one of said first contact and said second contact comprises a material selected from the group consisting of titanium, nickel, molybdenum, tungsten, platinum and palladium.
Claim 10
Dependent Claim
308 words
A semiconductor device comprising: a driver thin film transistor provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate, said driver thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween; and a first contact being provided in contact with said first region being more conductive than said first lightly doped region, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween; and a second contact being provided in contact with said second region being more conductive than said second lightly doped region, wherein said second lightly doped region does not overlap with said second gate electrode, wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region through said second contact, and wherein at least one of said first contact and said second contact comprises a material selected from the group consisting of titanium, nickel, molybdenum, tungsten, platinum and palladium.
Claim 11
Dependent Claim
275 words
A semiconductor device comprising: a driver thin film transistor provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate, said driver thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; and a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween, wherein said second lightly doped region does not overlap with said second gate electrode, wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region, and wherein said first region being more conductive than said first lightly doped region contains therein an element selected from the group consisting of phosphorus, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 .
Claim 12
Dependent Claim
275 words
A semiconductor device comprising: a driver thin film transistor provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate, said driver thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; and a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween, wherein said second lightly doped region does not overlap with said second gate electrode, wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region, and wherein said first region being more conductive than said first lightly doped region contains therein an element selected from the group consisting of phosphorus, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 .
Claim 13
Dependent Claim
275 words
A semiconductor device comprising: a driver thin film transistor provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate, said driver thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; and a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween, wherein said second lightly doped region does not overlap with said second gate electrode, wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region, and wherein said second region being more conductive than said second lightly doped region contains therein an element selected from the group consisting of phosphorus, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 .
Claim 14
Dependent Claim
275 words
A semiconductor device comprising: a driver thin film transistor provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate, said driver thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; and a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; and a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween, wherein said second lightly doped region does not overlap with said second gate electrode, wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region, and wherein said second region being more conductive than said second lightly doped region contains therein an element selected from the group consisting of phosphorus, arsenic and boron at a concentration of 1×10 19 to 1×10 21 /cm 3 .
Claim 15
Dependent Claim
18 words
The device of claim 1 wherein said region being more conductive than said lightly doped region comprises silicide.
Claim 16
Dependent Claim
18 words
The device of claim 2 wherein said region being more conductive than said lightly doped region comprises silicide.
Claim 17
Dependent Claim
18 words
The device of claim 4 wherein said region being more conductive than said lightly doped region comprises silicide.
Claim 18
Dependent Claim
18 words
The device of claim 5 wherein said region being more conductive than said lightly doped region comprises silicide.
Claim 19
Dependent Claim
18 words
The device of claim 6 wherein said region being more conductive than said lightly doped region comprises silicide.
Claim 20
Dependent Claim
39 words
The device of claim 4 wherein said electrode being in ohmic contact with said region being more conductive than said lightly doped region comprises a material selected from the group consisting of titanium, nickel, molybdenum, tungsten, platinum and palladium.
Claim 21
Dependent Claim
26 words
The device of claim 1 wherein said region being more conductive than said lightly doped region has the same conductivity type as said lightly doped region.
Claim 22
Dependent Claim
26 words
The device of claim 2 wherein said region being more conductive than said lightly doped region has the same conductivity type as said lightly doped region.
Claim 23
Dependent Claim
26 words
The device of claim 3 wherein said region being more conductive than said lightly doped region has the same conductivity type as said lightly doped region.
Claim 24
Dependent Claim
26 words
The device of claim 4 wherein said region being more conductive than said lightly doped region has the same conductivity type as said lightly doped region.
Claim 25
Dependent Claim
26 words
The device of claim 5 wherein said region being more conductive than said lightly doped region has the same conductivity type as said lightly doped region.
Claim 26
Dependent Claim
26 words
The device of claim 6 wherein said region being more conductive than said lightly doped region has the same conductivity type as said lightly doped region.
Claim 27
Dependent Claim
26 words
The device of claim 7 wherein said region being more conductive than said lightly doped region has the same conductivity type as said lightly doped region.
Claim 28
Dependent Claim
283 words
A semiconductor device comprising: a driver thin film transistor provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate, said driver thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween; and an electrode comprising a first layer comprising titanium, and a second layer comprising aluminum provided over said first layer, wherein said first layer is in contact with said first region being more conductive than said first lightly doped region, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween; and wherein said second lightly doped region does not overlap with said second gate electrode, and wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region through said first layer and said second layer.
Claim 29
Dependent Claim
283 words
A semiconductor device comprising: a driver thin film transistor provided over a substrate; a pixel thin film transistor provided over said substrate; and a pixel electrode provided over said substrate, said driver thin film transistor comprising: a first semiconductor layer provided over said substrate and having a first channel region, a first lightly doped region and a first region being more conductive than said first lightly doped region; a first gate electrode provided adjacent to said first channel region with a first gate insulating film therebetween; and an electrode comprising a first layer comprising titanium, and a second layer comprising aluminum provided over said first layer, wherein said first layer is in contact with said first region being more conductive than said first lightly doped region, wherein said first lightly doped region has a region overlapping with said first gate electrode and has a region not overlapping with said first gate electrode, and wherein said first region being more conductive than said first lightly doped region is provided on an opposite side of said first lightly doped region to said first channel region, and said pixel thin film transistor comprising: a second semiconductor layer provided over said substrate and having a second channel region, a second lightly doped region and a second region being more conductive than said second lightly doped region; a second gate electrode provided adjacent to said second channel region with a second gate insulating film therebetween; and wherein said second lightly doped region does not overlap with said second gate electrode, and wherein said pixel electrode is connected with said second region being more conductive than said second lightly doped region through said first layer and said second layer.
Claim 30
Dependent Claim
18 words
The device of claim 21 wherein said region being more conductive than said lightly doped region comprises silicide.
Claim 31
Dependent Claim
26 words
The device of claim 21 wherein said region being more conductive than said lightly doped region has the same conductivity type as said lightly doped region.
Claim 32
Dependent Claim
46 words
The device of claim 1 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said first region being more conductive than said first lightly doped region.
Claim 33
Dependent Claim
46 words
The device of claim 1 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said second region being more conductive than said second lightly doped region.
Claim 34
Dependent Claim
46 words
The device of claim 2 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said first region being more conductive than said first lightly doped region.
Claim 35
Dependent Claim
46 words
The device of claim 2 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said second region being more conductive than said second lightly doped region.
Claim 36
Dependent Claim
46 words
The device of claim 3 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said first region being more conductive than said first lightly doped region.
Claim 37
Dependent Claim
46 words
The device of claim 3 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said second region being more conductive than said second lightly doped region.
Claim 38
Dependent Claim
46 words
The device of claim 4 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said first region being more conductive than said first lightly doped region.
Claim 39
Dependent Claim
46 words
The device of claim 4 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said second region being more conductive than said second lightly doped region.
Claim 40
Dependent Claim
46 words
The device of claim 6 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said first region being more conductive than said first lightly doped region.
Claim 41
Dependent Claim
46 words
The device of claim 6 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said second region being more conductive than said second lightly doped region.
Claim 42
Dependent Claim
46 words
The device of claim 7 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said first region being more conductive than said first lightly doped region.
Claim 43
Dependent Claim
46 words
The device of claim 7 further comprising an electrode having a layer comprising a material selected from the group consisting of nickel, molybdenum, tungsten, platinum, and palladium, said layer being provided in contact with said second region being more conductive than said second lightly doped region.
Claim 44
Dependent Claim
15 words
The device of claim 2 wherein said pixel thin film transistor has an n-channel type.
Claim 45
Dependent Claim
15 words
The device of claim 3 wherein said pixel thin film transistor has an n-channel type.
Claim 46
Dependent Claim
15 words
The device of claim 4 wherein said pixel thin film transistor has an n-channel type.
Claim 47
Dependent Claim
15 words
The device of claim 5 wherein said pixel thin film transistor has an n-channel type.
Claim 48
Dependent Claim
15 words
The device of claim 6 wherein said pixel thin film transistor has an n-channel type.
Claim 49
Dependent Claim
15 words
The device of claim 7 wherein said pixel thin film transistor has an n-channel type.
Claim 50
Dependent Claim
15 words
The device of claim 21 wherein said pixel thin film transistor has an n-channel type.
Claim 51
Dependent Claim
13 words
The device of claim 1 wherein said pixel electrode comprises a transparent electrode.
Claim 52
Dependent Claim
13 words
The device of claim 2 wherein said pixel electrode comprises a transparent electrode.
Claim 53
Dependent Claim
13 words
The device of claim 3 wherein said pixel electrode comprises a transparent electrode.
Claim 54
Dependent Claim
13 words
The device of claim 4 wherein said pixel electrode comprises a transparent electrode.
Claim 55
Dependent Claim
13 words
The device of claim 5 wherein said pixel electrode comprises a transparent electrode.
Claim 56
Dependent Claim
13 words
The device of claim 6 wherein said pixel electrode comprises a transparent electrode.
Claim 57
Dependent Claim
13 words
The device of claim 7 wherein said pixel electrode comprises a transparent electrode.
Claim 58
Dependent Claim
13 words
The device of claim 21 wherein said pixel electrode comprises a transparent electrode.
Claim 59
Dependent Claim
11 words
The device of claim 43 wherein said transparent electrode comprises ITO.
Claim 60
Dependent Claim
11 words
The device of claim 44 wherein said transparent electrode comprises ITO.
Claim 61
Dependent Claim
11 words
The device of claim 45 wherein said transparent electrode comprises ITO.
Claim 62
Dependent Claim
11 words
The device of claim 46 wherein said transparent electrode comprises ITO.
Claim 63
Dependent Claim
11 words
The device of claim 47 wherein said transparent electrode comprises ITO.
Claim 64
Dependent Claim
11 words
The device of claim 48 wherein said transparent electrode comprises ITO.
Claim 65
Dependent Claim
11 words
The device of claim 49 wherein said transparent electrode comprises ITO.
Claim 66
Dependent Claim
11 words
The device of claim 50 wherein said transparent electrode comprises ITO.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-26 | 2004-06-26 | 2004-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-26 | 2008-06-26 | 2008-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-26 | 2012-06-26 | 2012-12-26 | $7700.00 | Window Closed / Lapsed |