US5567966A
Expired / Lapsed
US
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Local thinning of channel region for ultra-thin film SOI MOSFET with elevated source/drain
Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1996-10-22
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Expires: 2015-06-07
Abstract
Abstract An elevated source/drain structure is described in which the channel region is thinned by local oxidation and wet etch while the source/drain region remained thick. This structure achieves source/drain resistances as small as 300 ohm-μm for NMOS, which makes possible high drive currents in deep submicron thin-film SOI/MOSFET.
Inventors
- 👤 Jeong-Mo Hwang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:09
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6757; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
116 words
A semiconductor-on-insulator transistor having elevated source/drain regions and a channel, said transistor comprising: a semiconductor substrate; an insulating layer situated on and abutting said semiconductor substrate; a semiconductor layer situated on and abutting said insulating layer, said semiconductor layer having a thin portion, thicker portions, and transition portions where the layer transitions from the thicker portions to the thinner portion; a gate structure insulatively disposed over said thin portion of said semiconductor layer; and wherein the channel is situated in said thin portion of said semiconductor layer, lightly doped diffusion regions are situated in said transition portions of said semiconductor layer, and said elevated source/drain regions are situated in said thicker portions of said semiconductor layer.
Claim 2
Dependent Claim
116 words
A semiconductor-on-insulator transistor having elevated source/drain regions and a channel, said transistor comprising: a semiconductor substrate; an insulating layer situated on and abutting said semiconductor substrate; a semiconductor layer situated on and abutting said insulating layer, said semiconductor layer having a thin portion, thicker portions, and transition portions where the layer transitions from the thicker portions to the thinner portion; a gate structure insulatively disposed over said thin portion of said semiconductor layer; and wherein the channel is situated in said thin portion of said semiconductor layer, lightly doped diffusion regions are situated in said transition portions of said semiconductor layer, and said elevated source/drain regions are situated in said thicker portions of said semiconductor layer.
Claim 3
Dependent Claim
19 words
The transistor of claim 1, wherein said elevated source/drain regions and said gate structure are at least partially silicided.
References Cited (Backward Citations)
US5124768A
Cited
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