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Thin film transistor having pixel electrode connected to a laminate structure

Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2002-07-12
•
Granted: 2003-08-19
•
Expires: 2022-07-12
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Abstract

Abstract An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

Inventors

  • 👤 Minoru Miyazaki
  • 👤 Akane Murakami
  • 👤 Baochun Cui
  • 👤 Mutsuo Yamamoto

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 19:48
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; H10D86/00; H10D86/40; H10D86/441; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5524

Claims Analysis

Total Claims: 119
Claim 1
Independent Claim 113 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium.
Claim 2
Dependent Claim 113 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium.
Claim 3
Dependent Claim 14 words
A display device according to claim 1 wherein the semiconductor layer comprises crystalline silicon.
Claim 4
Dependent Claim 15 words
A display device according to claim 1 wherein the first conductive layer comprises titanium nitride.
Claim 5
Dependent Claim 17 words
A display device according to claim 1 wherein the second conductive layer comprises aluminum containing 1% silicon.
Claim 6
Dependent Claim 15 words
A display device according to claim 1 wherein the third conductive layer comprises titanium nitride.
Claim 7
Dependent Claim 20 words
A display device according to claim 1 wherein the second conductive layer has a thickness of 2000 Å or more.
Claim 8
Dependent Claim 28 words
A display device according to claim 1 wherein the gate electrode comprises at least one selected from the group consisting of aluminum, silicon, titanium, tantalum, tungsten, and molybdenum.
Claim 9
Dependent Claim 17 words
A display device according to claim 1 wherein the gate electrode is formed over the semiconductor layer.
Claim 10
Dependent Claim 20 words
A display device according to claim 1 wherein the display device is an active matrix type liquid crystal display device.
Claim 11
Dependent Claim 112 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium.
Claim 12
Dependent Claim 112 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium.
Claim 13
Dependent Claim 14 words
A display device according to claim 10 wherein the semiconductor layer comprises crystalline silicon.
Claim 14
Dependent Claim 15 words
A display device according to claim 10 wherein the first conductive layer comprises titanium nitride.
Claim 15
Dependent Claim 17 words
A display device according to claim 10 wherein the second conductive layer comprises aluminum containing 1% silicon.
Claim 16
Dependent Claim 15 words
A display device according to claim 10 wherein the third conductive layer comprises titanium nitride.
Claim 17
Dependent Claim 20 words
A display device according to claim 10 wherein the second conductive layer has a thickness of 2000 Å or more.
Claim 18
Dependent Claim 28 words
A display device according to claim 10 wherein the gate electrode comprises at least one selected from the group consisting of aluminum, silicon, titanium, tantalum, tungsten, and molybdenum.
Claim 19
Dependent Claim 17 words
A display device according to claim 10 wherein the gate electrode is formed over the semiconductor layer.
Claim 20
Dependent Claim 20 words
A display device according to claim 10 wherein the display device is an active matrix type liquid crystal display device.
Claim 21
Dependent Claim 120 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium.
Claim 22
Dependent Claim 120 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium.
Claim 23
Dependent Claim 14 words
A display device according to claim 19 wherein the semiconductor layer comprises crystalline silicon.
Claim 24
Dependent Claim 15 words
A display device according to claim 19 wherein the first conductive layer comprises titanium nitride.
Claim 25
Dependent Claim 17 words
A display device according to claim 19 wherein the second conductive layer comprises aluminum containing 1% silicon.
Claim 26
Dependent Claim 15 words
A display device according to claim 19 wherein the third conductive layer comprises titanium nitride.
Claim 27
Dependent Claim 20 words
A display device according to claim 19 wherein the second conductive layer has a thickness of 2000 Å or more.
Claim 28
Dependent Claim 28 words
A display device according to claim 19 wherein the gate electrode comprises at least one selected from the group consisting of aluminum, silicon, titanium, tantalum, tungsten, and molybdenum.
Claim 29
Dependent Claim 17 words
A display device according to claim 19 wherein the gate electrode is formed over the semiconductor layer.
Claim 30
Dependent Claim 20 words
A display device according to claim 19 wherein the display device is an active matrix type liquid crystal display device.
Claim 31
Dependent Claim 121 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å or less, and the third conductive layer comprises titanium.
Claim 32
Dependent Claim 121 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å or less, and the third conductive layer comprises titanium.
Claim 33
Dependent Claim 14 words
A display device according to claim 28 wherein the semiconductor layer comprises crystalline silicon.
Claim 34
Dependent Claim 15 words
A display device according to claim 28 wherein the first conductive layer comprises titanium nitride.
Claim 35
Dependent Claim 17 words
A display device according to claim 28 wherein the second conductive layer comprises aluminum containing 1% silicon.
Claim 36
Dependent Claim 15 words
A display device according to claim 28 wherein the third conductive layer comprises titanium nitride.
Claim 37
Dependent Claim 20 words
A display device according to claim 28 wherein the second conductive layer has a thickness of 2000 Å or more.
Claim 38
Dependent Claim 28 words
A display device according to claim 28 wherein the gate electrode comprises at least one selected from the group consisting of aluminum, silicon, titanium, tantalum, tungsten, and molybdenum.
Claim 39
Dependent Claim 17 words
A display device according to claim 28 wherein the gate electrode is formed over the semiconductor layer.
Claim 40
Dependent Claim 20 words
A display device according to claim 28 wherein the display device is an active matrix type liquid crystal display device.
Claim 41
Dependent Claim 119 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium.
Claim 42
Dependent Claim 119 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium.
Claim 43
Dependent Claim 14 words
A display device according to claim 37 wherein the semiconductor layer comprises crystalline silicon.
Claim 44
Dependent Claim 15 words
A display device according to claim 37 wherein the first conductive layer comprises titanium nitride.
Claim 45
Dependent Claim 17 words
A display device according to claim 37 wherein the second conductive layer comprises aluminum containing 1% silicon.
Claim 46
Dependent Claim 15 words
A display device according to claim 37 wherein the third conductive layer comprises titanium nitride.
Claim 47
Dependent Claim 20 words
A display device according to claim 37 wherein the second conductive layer has a thickness of 2000 Å or more.
Claim 48
Dependent Claim 28 words
A display device according to claim 37 wherein the gate electrode comprises at least one selected from the group consisting of aluminum, silicon, titanium, tantalum, tungsten, and molybdenum.
Claim 49
Dependent Claim 17 words
A display device according to claim 37 wherein the gate electrode is formed over the semiconductor layer.
Claim 50
Dependent Claim 20 words
A display device according to claim 37 wherein the display device is an active matrix type liquid crystal display device.
Claim 51
Dependent Claim 120 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å or less, and the third conductive layer comprises titanium.
Claim 52
Dependent Claim 120 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å or less, and the third conductive layer comprises titanium.
Claim 53
Dependent Claim 14 words
A display device according to claim 46 wherein the semiconductor layer comprises crystalline silicon.
Claim 54
Dependent Claim 15 words
A display device according to claim 46 wherein the first conductive layer comprises titanium nitride.
Claim 55
Dependent Claim 17 words
A display device according to claim 46 wherein the second conductive layer comprises aluminum containing 1% silicon.
Claim 56
Dependent Claim 15 words
A display device according to claim 46 wherein the third conductive layer comprises titanium nitride.
Claim 57
Dependent Claim 20 words
A display device according to claim 46 wherein the second conductive layer has a thickness of 2000 Å or more.
Claim 58
Dependent Claim 28 words
A display device according to claim 46 wherein the gate electrode comprises at least one selected from the group consisting of aluminum, silicon, titanium, tantalum, tungsten, and molybdenum.
Claim 59
Dependent Claim 17 words
A display device according to claim 46 wherein the gate electrode is formed over the semiconductor layer.
Claim 60
Dependent Claim 20 words
A display device according to claim 46 wherein the display device is an active matrix type liquid crystal display device.
Claim 61
Dependent Claim 128 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å or less, and the third conductive layer comprises titanium.
Claim 62
Dependent Claim 128 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å or less, and the third conductive layer comprises titanium.
Claim 63
Dependent Claim 14 words
A display device according to claim 55 wherein the semiconductor layer comprises crystalline silicon.
Claim 64
Dependent Claim 15 words
A display device according to claim 55 wherein the first conductive layer comprises titanium nitride.
Claim 65
Dependent Claim 17 words
A display device according to claim 55 wherein the second conductive layer comprises aluminum containing 1% silicon.
Claim 66
Dependent Claim 15 words
A display device according to claim 55 wherein the third conductive layer comprises titanium nitride.
Claim 67
Dependent Claim 20 words
A display device according to claim 55 wherein the second conductive layer has a thickness of 2000 Å or more.
Claim 68
Dependent Claim 28 words
A display device according to claim 55 wherein the gate electrode comprises at least one selected from the group consisting of aluminum, silicon, titanium, tantalum, tungsten, and molybdenum.
Claim 69
Dependent Claim 17 words
A display device according to claim 55 wherein the gate electrode is formed over the semiconductor layer.
Claim 70
Dependent Claim 20 words
A display device according to claim 55 wherein the display device is an active matrix type liquid crystal display device.
Claim 71
Dependent Claim 127 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å or less, and the third conductive layer comprises titanium.
Claim 72
Dependent Claim 127 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å or less, and the third conductive layer comprises titanium.
Claim 73
Dependent Claim 14 words
A display device according to claim 64 wherein the semiconductor layer comprises crystalline silicon.
Claim 74
Dependent Claim 15 words
A display device according to claim 64 wherein the first conductive layer comprises titanium nitride.
Claim 75
Dependent Claim 17 words
A display device according to claim 64 wherein the second conductive layer comprises aluminum containing 1% silicon.
Claim 76
Dependent Claim 15 words
A display device according to claim 64 wherein the third conductive layer comprises titanium nitride.
Claim 77
Dependent Claim 20 words
A display device according to claim 64 wherein the second conductive layer has a thickness of 2000 Å or more.
Claim 78
Dependent Claim 28 words
A display device according to claim 64 wherein the gate electrode comprises at least one selected from the group consisting of aluminum, silicon, titanium, tantalum, tungsten, and molybdenum.
Claim 79
Dependent Claim 17 words
A display device according to claim 64 wherein the gate electrode is formed over the semiconductor layer.
Claim 80
Dependent Claim 20 words
A display device according to claim 64 wherein the display device is an active matrix type liquid crystal display device.
Claim 81
Dependent Claim 101 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor region, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor region through an electrode, the electrode comprising a first layer in contact with the semiconductor region, a second layer formed on the first layer, and a third layer formed on the second layer and in contact with the pixel electrode, wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium.
Claim 82
Dependent Claim 101 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor region, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor region through an electrode, the electrode comprising a first layer in contact with the semiconductor region, a second layer formed on the first layer, and a third layer formed on the second layer and in contact with the pixel electrode, wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium.
Claim 83
Dependent Claim 15 words
A display device according to claim 73 , wherein the semiconductor region comprises crystalline silicon.
Claim 84
Dependent Claim 14 words
A display device according to claim 73 wherein the first layer comprises titanium nitride.
Claim 85
Dependent Claim 16 words
A display device according to claim 73 wherein the second layer comprises aluminum containing 1% silicon.
Claim 86
Dependent Claim 14 words
A display device according to claim 73 wherein the third layer comprises titanium nitride.
Claim 87
Dependent Claim 19 words
A display device according to claim 73 wherein the second layer has a thickness of 2000 Å or more.
Claim 88
Dependent Claim 28 words
A display device according to claim 73 wherein the gate electrode comprises at least one selected from the group consisting of aluminum, silicon, titanium, tantalum, tungsten, and molybdenum.
Claim 89
Dependent Claim 17 words
A display device according to claim 73 wherein the gate electrode is formed over the semiconductor region.
Claim 90
Dependent Claim 20 words
A display device according to claim 73 wherein the display device is an active matrix type liquid crystal display device.
Claim 91
Dependent Claim 100 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor region, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising indium tin oxide electrically connected to the semiconductor region through an electrode, the electrode comprising a first layer in contact with the semiconductor region, a second layer formed on the first layer, and a third layer formed on the second layer and in contact with the pixel electrode, wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium.
Claim 92
Dependent Claim 100 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a semiconductor region, and a gate electrode with a gate insulating film interposed therebetween; and a pixel electrode comprising indium tin oxide electrically connected to the semiconductor region through an electrode, the electrode comprising a first layer in contact with the semiconductor region, a second layer formed on the first layer, and a third layer formed on the second layer and in contact with the pixel electrode, wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium.
Claim 93
Dependent Claim 14 words
A display device according to claim 82 wherein the semiconductor region comprises crystalline silicon.
Claim 94
Dependent Claim 14 words
A display device according to claim 82 wherein the first layer comprises titanium nitride.
Claim 95
Dependent Claim 16 words
A display device according to claim 82 wherein the second layer comprises aluminum containing 1% silicon.
Claim 96
Dependent Claim 14 words
A display device according to claim 82 wherein the third layer comprises titanium nitride.
Claim 97
Dependent Claim 19 words
A display device according to claim 82 wherein the second layer has a thickness of 2000 Å or more.
Claim 98
Dependent Claim 28 words
A display device according to claim 82 wherein the gate electrode comprised at least one selected from the group consisting of aluminum, silicon, titanium, tantalum, tungsten, and molybdenum.
Claim 99
Dependent Claim 17 words
A display device according to claim 82 wherein the gate electrode is formed over the semiconductor region.
Claim 100
Dependent Claim 20 words
A display device according to claim 82 wherein the display device is an active matrix type liquid crystal display device.
Claim 101
Dependent Claim 119 words
A displat device comprising: a thin film transistor over a substrate, the thin film transistor comprising a source region and a drain region which comprise silicon; and a pixel electrode comprising a conductive oxide film electricallly connected to one of the source region and the drain region through an electrode, the electrode comprising a first layer in contact with the one of the source region and the drain region, a second layer formed on the first layer, and a third layer formed on the second layer, wherein the pixel electrode is in contact with an upper surface of the third layer, and wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium.
Claim 102
Dependent Claim 119 words
A displat device comprising: a thin film transistor over a substrate, the thin film transistor comprising a source region and a drain region which comprise silicon; and a pixel electrode comprising a conductive oxide film electricallly connected to one of the source region and the drain region through an electrode, the electrode comprising a first layer in contact with the one of the source region and the drain region, a second layer formed on the first layer, and a third layer formed on the second layer, wherein the pixel electrode is in contact with an upper surface of the third layer, and wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium.
Claim 103
Dependent Claim 18 words
A display device according to claim 91 wherein the source region and the drain region comprise crystalline silicon.
Claim 104
Dependent Claim 14 words
A display device according to claim 91 wherein the first layer comprises titanium nitride.
Claim 105
Dependent Claim 16 words
A display device according to claim 91 wherein the second layer comprises aluminum containing 1% silicon.
Claim 106
Dependent Claim 14 words
A display device according to claim 91 wherein the third layer comprises titanium nitride.
Claim 107
Dependent Claim 19 words
A display device according to claim 91 wherein the second layer has a thickness of 2000 Å or more.
Claim 108
Dependent Claim 20 words
A display device according to claim 91 wherein the thin film transistor is a top gate type thin film transistor.
Claim 109
Dependent Claim 20 words
A display device according to claim 91 wherein the display device is an active matrix type liquid crystal display device.
Claim 110
Dependent Claim 118 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a source region and a drain region which comprise silicon; and a pixel electrode comprising indium tin oxide electrically connected to one of the source region and the drain region through an electrode, the electrode comprising a first layer in contact with the one of the source region and the drain region, a second layer formed on the first layer, and a third layer formed on the second layer, wherein the pixel electrode is in contact with an upper surface of the third layer, and wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium.
Claim 111
Dependent Claim 118 words
A display device comprising: a thin film transistor over a substrate, the thin film transistor comprising a source region and a drain region which comprise silicon; and a pixel electrode comprising indium tin oxide electrically connected to one of the source region and the drain region through an electrode, the electrode comprising a first layer in contact with the one of the source region and the drain region, a second layer formed on the first layer, and a third layer formed on the second layer, wherein the pixel electrode is in contact with an upper surface of the third layer, and wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium.
Claim 112
Dependent Claim 18 words
A display device according to cliam 99 wherein the source region and the drain region comprise crystalline silicon.
Claim 113
Dependent Claim 18 words
A display device according to cliam 99 wherein the source region and the drain region comprise crystalline silicon.
Claim 114
Dependent Claim 14 words
A display device according to claim 99 wherein the first layer comprises titanium nitride.
Claim 115
Dependent Claim 16 words
A display device according to claim 99 wherein the second layer comprises aluminum containing 1% silicon.
Claim 116
Dependent Claim 14 words
A display device according to claim 99 wherein the third layer comprises titanium nitride.
Claim 117
Dependent Claim 19 words
A. display device according to claim 99 wherein the second layer has a thickness of 2000 Å or more.
Claim 118
Dependent Claim 20 words
A display device according to claim 99 wherein the thin film transistor is a top gate type thin film transistor.
Claim 119
Dependent Claim 20 words
A display device according to claim 99 wherein the display device is an active matrix type liquid crystal display device.

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Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
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