US5677240A
Expired / Lapsed
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Method for forming a semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1995-05-26
•
Granted: 1997-10-14
•
Expires: 2015-05-26
Abstract
Abstract According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200° C.
Inventors
- 👤 Akane Murakami
- 👤 Baochun Cui
- 👤 Minoru Miyazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; H10F; H10F71/00; H10F71/138; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 81
Claim 1
Independent Claim
104 words
A method for forming a semiconductor device comprising the steps of: forming a transistor on an insulating substrate, said transistor having a pair of impurity regions as source and drain regions; forming a transparent conductive oxide film for an electro-optical device over said insulating substrate; and heating said transistor and said transparent conductive oxide film in a hydrogen containing atmosphere at a temperature not higher than 400° C. for annealing both said transparent conductive oxide film and said transistor, wherein said transparent conductive oxide film is electrically connected to one of said impurity regions by at least one conductive layer comprising titanium interposed therebetween.
Claim 2
Independent Claim
104 words
A method for forming a semiconductor device comprising the steps of: forming a transistor on an insulating substrate, said transistor having a pair of impurity regions as source and drain regions; forming a transparent conductive oxide film for an electro-optical device over said insulating substrate; and heating said transistor and said transparent conductive oxide film in a hydrogen containing atmosphere at a temperature not higher than 400° C. for annealing both said transparent conductive oxide film and said transistor, wherein said transparent conductive oxide film is electrically connected to one of said impurity regions by at least one conductive layer comprising titanium interposed therebetween.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said heating step is carried out at a temperature not higher than 380° C.
Claim 4
Dependent Claim
20 words
The method of claim 2 further comprising the step of patterning said transparent conductive oxide film before said heating step.
Claim 5
Dependent Claim
28 words
The method of claim 1 wherein said transparent conductive oxide film comprises a material selected from the group consisting of indium tin oxide, zinc oxide and tin oxide.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein said atmosphere comprises hydrogen at a concentration of 95% or more.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein said transistor is a thin film transistor comprising a non-single crystalline semiconductor.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein said heating step is performed for 30 minutes to 30 hours.
Claim 9
Dependent Claim
15 words
The method of claim 1 where said transparent conductive oxide film comprises a pixel electrode.
Claim 10
Independent Claim
97 words
A method for forming a semiconductor device comprising the steps of: forming a transistor comprising a crystalline semiconductor region on an insulating substrate and a gate insulating layer on said region and a gate electrode on said gate insulating layer, said gate electrode comprising aluminum; forming an interlayer insulator over said gate electrode; forming a transparent conductive oxide film for an electro-optical device over a part of said interlayer insulator; and annealing said transistor and said transparent conductive oxide film in a hydrogen containing atmosphere at a temperature higher than 200° C. and lower than 400° C.
Claim 11
Independent Claim
97 words
A method for forming a semiconductor device comprising the steps of: forming a transistor comprising a crystalline semiconductor region on an insulating substrate and a gate insulating layer on said region and a gate electrode on said gate insulating layer, said gate electrode comprising aluminum; forming an interlayer insulator over said gate electrode; forming a transparent conductive oxide film for an electro-optical device over a part of said interlayer insulator; and annealing said transistor and said transparent conductive oxide film in a hydrogen containing atmosphere at a temperature higher than 200° C. and lower than 400° C.
Claim 12
Dependent Claim
16 words
The method of claim 9 wherein said conductive oxide film is at least a single layer.
Claim 13
Dependent Claim
39 words
The method of claim 9 wherein said conductive oxide film comprises a lower layer comprising a material selected from the group consisting of chromium and titanium nitride, and an upper layer provided on said lower layer and comprising aluminum.
Claim 14
Dependent Claim
20 words
The method of claim 9 wherein said annealing is carried out at a temperature of 250° C. to 380° C.
Claim 15
Dependent Claim
28 words
The method of claim 9 wherein said transparent conductive oxide film comprises a material selected from the group consisting of indium tin oxide, zinc oxide and tin oxide.
Claim 16
Dependent Claim
17 words
The method of claim 9 wherein said annealing step is performed for 30 minutes to 30 hours.
Claim 17
Dependent Claim
15 words
The method of claim 9 where said transparent conductive oxide film comprises a pixel electrode.
Claim 18
Independent Claim
119 words
A method for manufacturing a semiconductor device comprising the steps of: providing a thin film transistor on a substrate, said transistor having a pair of impurity regions comprising silicon; forming a transparent conductive oxide electrode of an electro-optical device over said substrate, said electrode being electrically connected to one of said impurity regions of said thin film transistor and being formed by sputtering at a temperature of 0° C. to 100° C.; and heating said electrode at 200° C. to 400° C. in a hydrogen gas to increase the electrical conductivity thereof, wherein a conductive layer comprising titanium is interposed between said transparent conductive oxide electrode and said one of the impurity regions to prevent a direct contact therebetween.
Claim 19
Independent Claim
119 words
A method for manufacturing a semiconductor device comprising the steps of: providing a thin film transistor on a substrate, said transistor having a pair of impurity regions comprising silicon; forming a transparent conductive oxide electrode of an electro-optical device over said substrate, said electrode being electrically connected to one of said impurity regions of said thin film transistor and being formed by sputtering at a temperature of 0° C. to 100° C.; and heating said electrode at 200° C. to 400° C. in a hydrogen gas to increase the electrical conductivity thereof, wherein a conductive layer comprising titanium is interposed between said transparent conductive oxide electrode and said one of the impurity regions to prevent a direct contact therebetween.
Claim 20
Dependent Claim
12 words
The method of claim 16 wherein said heating is performed in hydrogen.
Claim 21
Dependent Claim
16 words
The method of claim 16 wherein said heating is performed at 250° C. to 380° C.
Claim 22
Dependent Claim
16 words
The method of claim 16 further comprising the step of patterning said electrode before said heating.
Claim 23
Dependent Claim
14 words
The method of claim 16 where said transparent conductive oxide comprises a pixel electrode.
Claim 24
Independent Claim
80 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor transistor on an insulating substrate, said transistor having a gate electrode comprising aluminum; forming a transparent conductive oxide fill for an electro-optical device over said insulating substrate; and heating said transistor and said transparent conductive oxide fill in a hydrogen containing atmosphere for 30 minutes to 30 hours to simultaneously neutralize dangling bonds within the transistor and enhance the conductivity of the transparent conductive oxide film.
Claim 25
Independent Claim
80 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor transistor on an insulating substrate, said transistor having a gate electrode comprising aluminum; forming a transparent conductive oxide fill for an electro-optical device over said insulating substrate; and heating said transistor and said transparent conductive oxide fill in a hydrogen containing atmosphere for 30 minutes to 30 hours to simultaneously neutralize dangling bonds within the transistor and enhance the conductivity of the transparent conductive oxide film.
Claim 26
Dependent Claim
20 words
The method of claim 21 wherein said heating step is carried out at a temperature not higher than 380° C.
Claim 27
Dependent Claim
20 words
The method of claim 22 further comprising the step of patterning said transparent conductive oxide film before said heating step.
Claim 28
Dependent Claim
28 words
The method of claim 21 wherein said transparent conductive oxide film comprises a material selected from the group consisting of indium tin oxide, zinc oxide and tin oxide.
Claim 29
Dependent Claim
17 words
The method of claim 21 wherein said atmosphere comprises hydrogen at a concentration of 95% or more.
Claim 30
Dependent Claim
17 words
The method of claim 21 wherein said transistor is a thin film transistor comprising a non-single-crystalline semiconductor.
Claim 31
Independent Claim
155 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor transistor on an insulating substrate, said transistor having a pair of impurity regions comprising silicon; forming a transparent conductive oxide film for an electro-optical device over said insulating substrate; electrically connecting said transparent conductive oxide film with one of said pair of impurity regions via at least first and second conductive films, said first and second conductive films comprising different materials; patterning said transparent conductive oxide film; and then heating said transistor and said transparent conductive oxide film to simultaneously neutralize dangling bonds within the transistor and enhance the conductivity of the transparent conductive oxide film, wherein said first conductive film comprising aluminum and said second conductive film is interposed between the first conductive film and the transparent conductive oxide film to prevent said first conductive film from directly contacting said transparent conductive oxide film, said second metal film comprising titanium.
Claim 32
Independent Claim
155 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor transistor on an insulating substrate, said transistor having a pair of impurity regions comprising silicon; forming a transparent conductive oxide film for an electro-optical device over said insulating substrate; electrically connecting said transparent conductive oxide film with one of said pair of impurity regions via at least first and second conductive films, said first and second conductive films comprising different materials; patterning said transparent conductive oxide film; and then heating said transistor and said transparent conductive oxide film to simultaneously neutralize dangling bonds within the transistor and enhance the conductivity of the transparent conductive oxide film, wherein said first conductive film comprising aluminum and said second conductive film is interposed between the first conductive film and the transparent conductive oxide film to prevent said first conductive film from directly contacting said transparent conductive oxide film, said second metal film comprising titanium.
Claim 33
Dependent Claim
20 words
The method of claim 27 wherein said heating step is carried out at a temperature not higher than 380° C.
Claim 34
Dependent Claim
28 words
The method of claim 27 wherein said transparent conductive oxide film comprises a material selected from the group consisting of indium tin oxide, zinc oxide and tin oxide.
Claim 35
Dependent Claim
17 words
The method of claim 27 wherein said atmosphere comprises hydrogen at a concentration of 95% or more.
Claim 36
Dependent Claim
17 words
The method of claim 27 wherein said transistor is a thin film transistor comprising a non-single-crystalline semiconductor.
Claim 37
Independent Claim
81 words
A method for forming a semiconductor device comprising the steps of: forming a transistor having a semiconductor layer on an insulating substrate and a gate electrode comprising aluminum adjacent to said semiconductor layer; forming a transparent conductive oxide film for an electro-optical device over said insulating substrate; and heating said transistor and said transparent conductive oxide film in a hydrogen containing atmosphere so that hydrogen enters the semiconductor layer at a temperature higher than 200° C. but lower than 400° C.
Claim 38
Independent Claim
81 words
A method for forming a semiconductor device comprising the steps of: forming a transistor having a semiconductor layer on an insulating substrate and a gate electrode comprising aluminum adjacent to said semiconductor layer; forming a transparent conductive oxide film for an electro-optical device over said insulating substrate; and heating said transistor and said transparent conductive oxide film in a hydrogen containing atmosphere so that hydrogen enters the semiconductor layer at a temperature higher than 200° C. but lower than 400° C.
Claim 39
Dependent Claim
20 words
The method of claim 32 wherein said heating step is carried out at a temperature not higher than 380° C.
Claim 40
Dependent Claim
20 words
The method of claim 33 further comprising the step of patterning said transparent conductive oxide film before said heating step.
Claim 41
Dependent Claim
28 words
The method of claim 32 wherein said transparent conductive oxide film comprises a material selected from the group consisting of indium tin oxide, zinc oxide and tin oxide.
Claim 42
Dependent Claim
17 words
The method of claim 32 wherein said atmosphere comprises hydrogen at a concentration of 95% or more.
Claim 43
Dependent Claim
16 words
The method of claim 32 wherein said transistor is a thin film comprising a non-single-crystalline semiconductor.
Claim 44
Independent Claim
102 words
A method for forming a semiconductor device comprising the steps of: forming a transistor comprising a crystalline semiconductor region on an insulating substrate and a gate insulating layer on said region and a gate electrode on said gate insulating layer; forming an interlayer insulator over said gate electrode; forming a transparent conductive oxide film for an electro-optical device over said interlayer insulator; patterning said transparent conductive oxide film; and then annealing said transistor and said transparent conductive oxide film in a hydrogen containing atmosphere at a temperature higher than 200° C. and lower than 400° C., wherein said gate electrode comprises aluminum.
Claim 45
Independent Claim
102 words
A method for forming a semiconductor device comprising the steps of: forming a transistor comprising a crystalline semiconductor region on an insulating substrate and a gate insulating layer on said region and a gate electrode on said gate insulating layer; forming an interlayer insulator over said gate electrode; forming a transparent conductive oxide film for an electro-optical device over said interlayer insulator; patterning said transparent conductive oxide film; and then annealing said transistor and said transparent conductive oxide film in a hydrogen containing atmosphere at a temperature higher than 200° C. and lower than 400° C., wherein said gate electrode comprises aluminum.
Claim 46
Dependent Claim
47 words
The method of claim 38 wherein a conductive layer connected to said transistor or the transparent conductive oxide film comprises a lower layer comprising a material selected from the group consisting of chromium and titanium nitride, and an upper layer comprising aluminum provided on said lower layer.
Claim 47
Dependent Claim
20 words
The method of claim 38 wherein said annealing is carried out at a temperature of 250° C. to 380° C.
Claim 48
Dependent Claim
28 words
The method of claim 38 wherein said transparent conductive oxide film comprises a material selected from the group consisting of indium tin oxide, zinc oxide and tin oxide.
Claim 49
Independent Claim
159 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor transistor comprising a crystalline semiconductor film on an insulating substrate and a gate electrode adjacent said semiconductor film with a gate insulating layer therebetween, said crystalline semiconductor film including a pair of impurity regions; forming an interlayer insulator over said transistor; forming a transparent conductive oxide film for an electro-optical device over said interlayer insulator; electrically connecting said transparent conductive oxide film to one of said pair of impurity regions; patterning said transparent conductive oxide film; and then annealing said transistor and said transparent conductive oxide film in a hydrogen for 30 minutes to 30 hours to simultaneously neutralize dangling bonds within the transistor and enhance the conductivity to the transparent conductive oxide film, wherein at least one conductive layer comprising titanium is interposed between said transparent conductive oxide film and said one of said pair of impurity regions to prevent a direct contact therebetween.
Claim 50
Independent Claim
159 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor transistor comprising a crystalline semiconductor film on an insulating substrate and a gate electrode adjacent said semiconductor film with a gate insulating layer therebetween, said crystalline semiconductor film including a pair of impurity regions; forming an interlayer insulator over said transistor; forming a transparent conductive oxide film for an electro-optical device over said interlayer insulator; electrically connecting said transparent conductive oxide film to one of said pair of impurity regions; patterning said transparent conductive oxide film; and then annealing said transistor and said transparent conductive oxide film in a hydrogen for 30 minutes to 30 hours to simultaneously neutralize dangling bonds within the transistor and enhance the conductivity to the transparent conductive oxide film, wherein at least one conductive layer comprising titanium is interposed between said transparent conductive oxide film and said one of said pair of impurity regions to prevent a direct contact therebetween.
Claim 51
Dependent Claim
47 words
The method of claim 42 wherein a conductive layer connected to said transistor or the transparent conductive oxide film comprises a lower layer comprising a material selected from the group consisting of chromium and titanium nitride, and an upper layer comprising aluminum provided on said lower layer.
Claim 52
Dependent Claim
20 words
The method of claim 42 wherein said annealing is carried out at a temperature of 250° C. to 380° C.
Claim 53
Dependent Claim
28 words
The method of claim 42 wherein said transparent conductive oxide film comprises a material selected from the group consisting of indium tin oxide, zinc oxide and tin oxide.
Claim 54
Independent Claim
191 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor transistor comprising a pair of impurity regions on an insulating substrate, a crystalline channel semiconductor region between said impurity regions and a gate insulating layer on said channel semiconductor region and a gate electrode on said gate insulating layer; forming an interlayer insulator over said gate electrode; forming a transparent conductive oxide film for an electro-optical device over said interlayer insulator; patterning said transparent conductive oxide film; electrically connecting said transparent conductive oxide film with one of said pair of impurity regions via at least first and second conductive films, said first and second conductive fills comprising different materials; and annealing said transistor and the patterned transparent conductive oxide film in a hydrogen gas to simultaneously neutralize dangling bonds within the transistor and enhance the conductivity of the transparent conductive oxide film, wherein said first conductive film comprises aluminum and said second conductive film is interposed between the first conductive film and the transparent conductive oxide film to prevent said first conductive film from directly contacting said transparent conductive oxide film, said second conductive film comprises titanium.
Claim 55
Independent Claim
191 words
A method for forming a semiconductor device comprising the steps of: forming a semiconductor transistor comprising a pair of impurity regions on an insulating substrate, a crystalline channel semiconductor region between said impurity regions and a gate insulating layer on said channel semiconductor region and a gate electrode on said gate insulating layer; forming an interlayer insulator over said gate electrode; forming a transparent conductive oxide film for an electro-optical device over said interlayer insulator; patterning said transparent conductive oxide film; electrically connecting said transparent conductive oxide film with one of said pair of impurity regions via at least first and second conductive films, said first and second conductive fills comprising different materials; and annealing said transistor and the patterned transparent conductive oxide film in a hydrogen gas to simultaneously neutralize dangling bonds within the transistor and enhance the conductivity of the transparent conductive oxide film, wherein said first conductive film comprises aluminum and said second conductive film is interposed between the first conductive film and the transparent conductive oxide film to prevent said first conductive film from directly contacting said transparent conductive oxide film, said second conductive film comprises titanium.
Claim 56
Dependent Claim
13 words
The method of claim 46 wherein said second conductive film comprises titanium nitride.
Claim 57
Dependent Claim
20 words
The method of claim 46 wherein said annealing is carried out at a temperature of 250° C. to 380° C.
Claim 58
Dependent Claim
28 words
The method of claim 46 wherein said transparent conductive oxide film comprises a material selected from the group consisting of indium tin oxide, zinc oxide and tin oxide.
Claim 59
Independent Claim
188 words
A method for forming a semiconductor device comprising the steps of: forming a transistor having a pair of impurity regions as source and drain of said transistor; forming an interlayer insulator over said transistor; forming a transparent conductive oxide fill for an electro-optical device over said interlayer insulator; electrically connecting said transparent conductive oxide film with one of said impurity regions via an interconnect, said interconnect comprising a first conductive film in direct contact with said transparent conductive oxide film, a second conductive film in direct contact with said one of the impurity regions, and a third conductive film interposed between said first and second conductive films; patterning said transparent conductive oxide film; and then annealing said transistor and said transparent conductive oxide film in a hydrogen containing atmosphere so that hydrogen enters the semiconductor layer at a temperature higher than 200° C. and lower than 400° C., wherein said third conductive film comprises aluminum, and said first and second conductive films comprise titanium and prevent said third conductive film from directly contacting with either of said transparent conductive oxide film and said one of said impurity regions.
Claim 60
Independent Claim
188 words
A method for forming a semiconductor device comprising the steps of: forming a transistor having a pair of impurity regions as source and drain of said transistor; forming an interlayer insulator over said transistor; forming a transparent conductive oxide fill for an electro-optical device over said interlayer insulator; electrically connecting said transparent conductive oxide film with one of said impurity regions via an interconnect, said interconnect comprising a first conductive film in direct contact with said transparent conductive oxide film, a second conductive film in direct contact with said one of the impurity regions, and a third conductive film interposed between said first and second conductive films; patterning said transparent conductive oxide film; and then annealing said transistor and said transparent conductive oxide film in a hydrogen containing atmosphere so that hydrogen enters the semiconductor layer at a temperature higher than 200° C. and lower than 400° C., wherein said third conductive film comprises aluminum, and said first and second conductive films comprise titanium and prevent said third conductive film from directly contacting with either of said transparent conductive oxide film and said one of said impurity regions.
Claim 61
Dependent Claim
15 words
The method of claim 50 wherein said first and third conductive films comprise titanium nitride.
Claim 62
Dependent Claim
20 words
The method of claim 50 wherein said annealing is carried out at a temperature of 250° C. to 380° C.
Claim 63
Dependent Claim
28 words
The method of claim 50 wherein said transparent conductive oxide film comprises a material selected from the group consisting of indium tin oxide, zinc oxide and tin oxide.
Claim 64
Independent Claim
91 words
A method for manufacturing a semiconductor device comprising the steps of: providing a thin film semiconductor transistor on a substrate; forming a transparent conductive oxide electrode of an electro-optical device over said substrate, said electrode being connected to said thin film transistor and being formed by sputtering, electron beam evaporation, or plasma chemical vapor deposition at a temperature of 0° C. to 100° C.; and simultaneously heating said transistor and said electrode for 30 minutes to 3 hours in a hydrogen gas, wherein said transistor has a gate electrode comprising aluminum.
Claim 65
Independent Claim
91 words
A method for manufacturing a semiconductor device comprising the steps of: providing a thin film semiconductor transistor on a substrate; forming a transparent conductive oxide electrode of an electro-optical device over said substrate, said electrode being connected to said thin film transistor and being formed by sputtering, electron beam evaporation, or plasma chemical vapor deposition at a temperature of 0° C. to 100° C.; and simultaneously heating said transistor and said electrode for 30 minutes to 3 hours in a hydrogen gas, wherein said transistor has a gate electrode comprising aluminum.
Claim 66
Dependent Claim
12 words
The method of claim 54 wherein said heating is performed in hydrogen.
Claim 67
Dependent Claim
16 words
The method of claim 54 wherein said heating is performed at 250° C. to 380° C.
Claim 68
Dependent Claim
16 words
The method of claim 54 further comprising the step of patterning said electrode before said heating.
Claim 69
Dependent Claim
14 words
The method of claim 54 where said transparent conductive oxide comprises a pixel electrode.
Claim 70
Independent Claim
99 words
A method for manufacturing a semiconductor device comprising the steps of: providing a semiconductor thin film transistor on a substrate; forming a transparent conductive oxide electrode of an electro-optical device over said substrate, said electrode being connected to said thin film transistor and being formed by sputtering, electron beam evaporation or plasma chemical vapor deposition at a temperature of 0° C. to 100° C.; and heating said electrode in a hydrogen gas to simultaneously neutralize dangling bonds within the transistor and enhance the conductivity of the transparent conductive oxide film, wherein said transistor has a gate electrode comprising aluminum.
Claim 71
Independent Claim
99 words
A method for manufacturing a semiconductor device comprising the steps of: providing a semiconductor thin film transistor on a substrate; forming a transparent conductive oxide electrode of an electro-optical device over said substrate, said electrode being connected to said thin film transistor and being formed by sputtering, electron beam evaporation or plasma chemical vapor deposition at a temperature of 0° C. to 100° C.; and heating said electrode in a hydrogen gas to simultaneously neutralize dangling bonds within the transistor and enhance the conductivity of the transparent conductive oxide film, wherein said transistor has a gate electrode comprising aluminum.
Claim 72
Dependent Claim
12 words
The method of claim 59 wherein said heating is performed in hydrogen.
Claim 73
Dependent Claim
16 words
The method of claim 59 wherein said heating is performed at 250° C. to 380° C.
Claim 74
Dependent Claim
16 words
The method of claim 59 further comprising the step of patterning said electrode before said heating.
Claim 75
Dependent Claim
14 words
The method of claim 59 where said transparent conductive oxide comprises a pixel electrode.
Claim 76
Independent Claim
93 words
A method for manufacturing a semiconductor device comprising the steps of: providing a thin film transistor having a semiconductor layer on a substrate; forming a transparent conductive oxide electrode of an electro-optical device over said substrate, said electrode being connected to said thin film transistor and being formed by sputtering, electron beam evaporation or plasma chemical vapor deposition at a temperature of 0° C. to 100° C.; and heating said transistor and said electrode at 200° C. to 400° C. in a hydrogen gas, wherein said transistor has a gate electrode comprising aluminum.
Claim 77
Independent Claim
93 words
A method for manufacturing a semiconductor device comprising the steps of: providing a thin film transistor having a semiconductor layer on a substrate; forming a transparent conductive oxide electrode of an electro-optical device over said substrate, said electrode being connected to said thin film transistor and being formed by sputtering, electron beam evaporation or plasma chemical vapor deposition at a temperature of 0° C. to 100° C.; and heating said transistor and said electrode at 200° C. to 400° C. in a hydrogen gas, wherein said transistor has a gate electrode comprising aluminum.
Claim 78
Dependent Claim
12 words
The method of claim 64 wherein said heating is performed in hydrogen.
Claim 79
Dependent Claim
16 words
The method of claim 64 wherein said heating is performed at 250° C. to 380° C.
Claim 80
Dependent Claim
16 words
The method of claim 64 further comprising the step of patterning said electrode before said heating.
Claim 81
Dependent Claim
14 words
The method of claim 64 where said transparent conductive oxide comprises a pixel electrode.
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