US5808315A
Expired / Lapsed
US
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Thin film transistor having transparent conductive film
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1996-12-19
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Granted: 1998-09-15
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Expires: 2016-12-19
Abstract
Abstract According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200° C.
Inventors
- 👤 Akane Murakami
- 👤 Baochun Cui
- 👤 Minoru Miyazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:58
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; H10F; H10F71/00; H10F71/138; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
111 words
A semiconductor device comprising: a transistor comprising a pair of impurity regions and a crystalline channel semiconductor region therebetween over an insulating substrate and a gate electrode adjacent to said channel semiconductor region; an interlayer insulator provided over said transistor; a transparent conductive oxide film provided on said interlayer insulator; and a first conductive layer connecting one of said impurity regions of said transistor with said transparent conductive oxide film, said first conductive layer comprising aluminum, wherein a second conductive layer comprising a different material from said first conductive layer is interposed between said first conductive layer and said transparent conductive oxide film in order to prevent a direct contact therebetween.
Claim 2
Dependent Claim
111 words
A semiconductor device comprising: a transistor comprising a pair of impurity regions and a crystalline channel semiconductor region therebetween over an insulating substrate and a gate electrode adjacent to said channel semiconductor region; an interlayer insulator provided over said transistor; a transparent conductive oxide film provided on said interlayer insulator; and a first conductive layer connecting one of said impurity regions of said transistor with said transparent conductive oxide film, said first conductive layer comprising aluminum, wherein a second conductive layer comprising a different material from said first conductive layer is interposed between said first conductive layer and said transparent conductive oxide film in order to prevent a direct contact therebetween.
Claim 3
Dependent Claim
28 words
The device of claim 1 wherein said transparent conductive oxide film comprises a material selected from the group consisting of indium tin oxide, zinc oxide and tin oxide.
Claim 4
Dependent Claim
23 words
The device of claim 1 wherein said second conductive layer comprises a material selected from the group consisting of chromium and titanium nitride.
Claim 5
Dependent Claim
21 words
The semiconductor device of claim 1 wherein said interlayer insulator has a leveled upper surface in contact with said pixel electrode.
Claim 6
Dependent Claim
13 words
The semiconductor device of claim 1 wherein said interlayer insulator comprises silicon oxide.
Claim 7
Dependent Claim
116 words
A semiconductor device comprising: a thin film transistor formed over a substrate, said transistor having source, drain and channel regions; an interlayer insulator formed over said thin film transistor; a pixel electrode formed on said interlayer insulator, said pixel electrode electrically connected to one of said source and drain regions through a contact hole in said interlayer insulator; a lead electrically connecting said one of the source and drain regions and said pixel electrode, said lead comprising aluminum; and a conductive layer interposed between said lead and said one of the source region and the drain region in order to prevent a direct contact therebetween, wherein said conductive layer comprises a different material from said lead.
Claim 8
Dependent Claim
116 words
A semiconductor device comprising: a thin film transistor formed over a substrate, said transistor having source, drain and channel regions; an interlayer insulator formed over said thin film transistor; a pixel electrode formed on said interlayer insulator, said pixel electrode electrically connected to one of said source and drain regions through a contact hole in said interlayer insulator; a lead electrically connecting said one of the source and drain regions and said pixel electrode, said lead comprising aluminum; and a conductive layer interposed between said lead and said one of the source region and the drain region in order to prevent a direct contact therebetween, wherein said conductive layer comprises a different material from said lead.
Claim 9
Dependent Claim
23 words
The semiconductor device of claim 6 wherein said conductive layer comprises a material selected from the group consisting of chromium and titanium nitride.
Claim 10
Dependent Claim
21 words
The semiconductor device of claim 6 wherein said interlayer insulator has a leveled upper surface in contact with said pixel electrode.
Claim 11
Dependent Claim
13 words
The semiconductor device of claim 6 wherein said interlayer insulator comprises silicon oxide.
Claim 12
Dependent Claim
113 words
A semiconductor device comprising: a thin film transistor having a crystalline semiconductor layer including channel, source and drain regions therein, formed over a substrate; an interlayer insulator formed over said thin film transistor; a pixel electrode comprising a transparent conductive oxide formed on said interlayer insulator; a lead formed on said interlayer insulator for electrically connecting one of said source and drain regions and said pixel electrode, said lead comprising aluminum; a conductive layer interposed between said lead and said pixel electrode and between said lead and said one of source and drain regions in order to prevent a direct contact therebetween, wherein said conductive layer comprises a different material from said lead.
Claim 13
Dependent Claim
113 words
A semiconductor device comprising: a thin film transistor having a crystalline semiconductor layer including channel, source and drain regions therein, formed over a substrate; an interlayer insulator formed over said thin film transistor; a pixel electrode comprising a transparent conductive oxide formed on said interlayer insulator; a lead formed on said interlayer insulator for electrically connecting one of said source and drain regions and said pixel electrode, said lead comprising aluminum; a conductive layer interposed between said lead and said pixel electrode and between said lead and said one of source and drain regions in order to prevent a direct contact therebetween, wherein said conductive layer comprises a different material from said lead.
Claim 14
Dependent Claim
23 words
The semiconductor device of claim 10 wherein said conductive layer comprises a material selected from the group consisting of chromium and titanium nitride.
Claim 15
Dependent Claim
21 words
The semiconductor device of claim 10 wherein said interlayer insulator has a leveled upper surface in contact with said pixel electrode.
Claim 16
Dependent Claim
13 words
The semiconductor device of claim 10 wherein said interlayer insulator comprises silicon oxide.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-09-14 | 2002-03-16 | 2002-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-14 | 2006-03-16 | 2006-09-15 | $3760.00 | Window Closed / Lapsed |
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