US6493497B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electro-optic structure and process for fabricating same
Assignee: NXP USA Inc
•
Filing: 2000-09-26
•
Granted: 2002-12-10
•
Expires: 2020-09-26
Abstract
Abstract High quality epitaxial layers of oxide can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous intermediate layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous intermediate layer. Waveguides may be formed of high quality monocrystalline material atop the monocrystalline buffer layer. The waveguides can suitably be formed to modulate the wave. Monolithic integration of oxide based electro-optic devices with III-V based photonics and Si circuitry is fully realized.
Inventors
- 👤 Jamal Ramdani
- 👤 Lyndee Hilt
- 👤 Ravindranath Droopad
- 👤 William Jay Ooms
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:23
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/02; G02B6/10; G02B6/12; G02B6/12004; G02B6/13; G02B6/131; G02F; G02F1/00; G02F1/01; G02F1/03; G02F1/035; G02F1/0338
Claims Analysis
Total Claims: 48
Claim 1
Independent Claim
34 words
A waveguide structure comprising: a monocrystalline semiconductor substrate; a monocrystalline oxide layer formed overlying the substrate; a core layer formed atop the oxide layer; and a cladding layer formed adjacent to the core layer.
Claim 2
Dependent Claim
34 words
A waveguide structure comprising: a monocrystalline semiconductor substrate; a monocrystalline oxide layer formed overlying the substrate; a core layer formed atop the oxide layer; and a cladding layer formed adjacent to the core layer.
Claim 3
Dependent Claim
13 words
The structure of claim 1 wherein the monocrystal line semiconductor substrate comprises silicon.
Claim 4
Dependent Claim
22 words
The structure of claim 1 wherein the oxide layer comprises an oxide selected form the group consisting of alkali earth metal titantates.
Claim 5
Dependent Claim
23 words
The structure of claim 3 wherein the oxide layer comprises Sr z Ba 1−z TiO 3 where z ranges from 0 to 1.
Claim 6
Dependent Claim
15 words
The structure of claim 1 wherein the core layer comprises monocrystalline strontium barium niobate (SBN).
Claim 7
Dependent Claim
11 words
The structure of claim 5 wherein the core layer comprises SBN:75.
Claim 8
Dependent Claim
14 words
The structure of claim 5 wherein the cladding layer comprises monocrystalline magnesium oxide (MgO).
Claim 9
Dependent Claim
15 words
The structure of claim 1 wherein the cladding layer comprises monocrystalline strontium barium niobate (SBN).
Claim 10
Dependent Claim
11 words
The structure of claim 8 wherein the cladding layer comprises SBN:60.
Claim 11
Dependent Claim
14 words
The structure of claim 1 wherein the cladding layer comprises a second cladding layer.
Claim 12
Dependent Claim
9 words
The structure of claim 10 comprising a symetric configuration.
Claim 13
Dependent Claim
9 words
The structure of claim 10 comprising an antisymetric configuration.
Claim 14
Dependent Claim
18 words
The structure of claim 1 further comprising an amorphous layer formed between the substrate and the oxide layer.
Claim 15
Dependent Claim
12 words
The structure of claim 13 wherein the amorphous layer comprises an oxide.
Claim 16
Dependent Claim
12 words
The structure of claim 14 wherein the amorphous layer comprises silicon oxide.
Claim 17
Dependent Claim
10 words
The structure of claim 1 further comprising a wave modulator.
Claim 18
Dependent Claim
45 words
A wave modulation structure comprising: a monocrystalline semiconductor substrate; a monocrystalline oxide layer formed overlying the substrate; a monocrystalline core layer formed atop the oxide layer; a monocrystalline cladding layer formed adjacent to the core layer; and an electrode in electrical communication with the core.
Claim 19
Dependent Claim
45 words
A wave modulation structure comprising: a monocrystalline semiconductor substrate; a monocrystalline oxide layer formed overlying the substrate; a monocrystalline core layer formed atop the oxide layer; a monocrystalline cladding layer formed adjacent to the core layer; and an electrode in electrical communication with the core.
Claim 20
Dependent Claim
10 words
The structure of claim 17 wherein the substrate comprises silicon.
Claim 21
Dependent Claim
25 words
The structure of claim 18 further comprising an electrical device at least partially in the substrate wherein the device is electrically coupled to the electrode.
Claim 22
Dependent Claim
12 words
The structure of claim 19 wherein the device comprises a silicon-based device.
Claim 23
Dependent Claim
11 words
The structure of claim 20 wherein the device comprises a CMOS.
Claim 24
Dependent Claim
22 words
The structure of claim 17 wherein the oxide layer comprises an oxide selected form the group consisting of alkali earth metal titantates.
Claim 25
Dependent Claim
23 words
The structure of claim 22 wherein the oxide layer comprises Sr z Ba 1−z TiO 3 where z ranges from 0 to 1.
Claim 26
Dependent Claim
9 words
The structure of claim 17 comprising a symetric configuration.
Claim 27
Dependent Claim
9 words
The structure of claim 17 comprising an antisymetric configuration.
Claim 28
Dependent Claim
23 words
The structure of claim 17 further comprising an amorphous oxide layer at the interface of the monocrystalline substrate and the monocrystalline oxide layer.
Claim 29
Dependent Claim
44 words
A process for fabricating a waveguide structure comprising the steps of: providing a monocrystalline semiconductor substrate; forming a monocrystalline oxide layer overlying the substrate; forming a core layer atop the oxide layer; and forming a cladding layer at least partially around the core layer.
Claim 30
Dependent Claim
44 words
A process for fabricating a waveguide structure comprising the steps of: providing a monocrystalline semiconductor substrate; forming a monocrystalline oxide layer overlying the substrate; forming a core layer atop the oxide layer; and forming a cladding layer at least partially around the core layer.
Claim 31
Dependent Claim
42 words
The process of claim 27 wherein the step of forming a monocrystalline oxide layer comprises epitaxially growing the oxide layer by a process selected from the group consisting of molecular beam epitaxy, chemical vapor deposition, physical vapor deposition, and pulsed laser deposition.
Claim 32
Dependent Claim
42 words
The process of claim 28 wherein the step of forming a cladding layer comprises: forming a bottom cladding layer atop the oxide layer; and forming a top cladding layer atop the core layer, whereby the cladding layers substantially surround the core layer.
Claim 33
Dependent Claim
17 words
The process of claim 29 wherein forming a top cladding layer further comprises forming a symetric structure.
Claim 34
Dependent Claim
35 words
The process of claim 27 wherein the step of forming a monocrystalline oxide layer comprises epitaxially growing a layer comprising layer comprising Sr z Ba 1−z TiO 3 where z ranges from 0 to 1.
Claim 35
Dependent Claim
14 words
The process of claim 27 further comprising the step of forming a symetric waveguide.
Claim 36
Dependent Claim
14 words
The process of claim 27 further comprising the step of forming an antisymetric waveguide.
Claim 37
Dependent Claim
22 words
The process of claim 27 wherein the step of forming a core layer comprises depositing a layer of strontium barium niobate (SBN).
Claim 38
Dependent Claim
35 words
The process of claim 34 wherein the step of depositing is by a process selected from the group consisting of metal organic chemical vapor deposition, pulsed laser deposition, chemical vapor deposition and molecular beam epitaxy.
Claim 39
Dependent Claim
26 words
The process of claim 34 wherein the step of forming a core layer further comprises axis orientating to lattice match the core layer and underlying layer.
Claim 40
Dependent Claim
22 words
The process of claim 27 wherein the step of forming a cladding layer comprises depositing a layer of strontium barium niobate (SBN).
Claim 41
Dependent Claim
19 words
The process of claim 27 wherein the step of forming a cladding layer comprises forming a monocrystalline cladding layer.
Claim 42
Dependent Claim
21 words
The process of claim 27 further comprising the step of forming a wave modulator in electrical communication with the core layer.
Claim 43
Dependent Claim
18 words
The process of claim 39 wherein the step of forming a wave modulator comprises forming a Mach-Zehnder interferometer.
Claim 44
Dependent Claim
52 words
The process of claim 39 wherein the step of forming a wave modulator comprises: etching back the layers to expose the substrate to form a mesa, wherein the mesa comprises the core and cladding layers; depositing a dielectric material in the etched back area; and forming an electrode atop the dielectric material.
Claim 45
Dependent Claim
22 words
The process of claim 41 wherein the step of depositing a dielectric material comprises depositing one of silicon oxide or silicon nitride.
Claim 46
Dependent Claim
28 words
The process of claim 41 further comprising the steps of: forming an electrical device at least partially in the substrate; and electrically coupling the device to the electrode.
Claim 47
Dependent Claim
22 words
The process of claim 43 wherein the step of forming comprises forming a silicon-based integrated circuit at least partially in the substrate.
Claim 48
Dependent Claim
19 words
The proces of claim 27 wherein the step of forming a core layer comprises forming a monocrystaline core layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-12-09 | 2006-06-10 | 2006-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-12-09 | 2010-06-10 | 2010-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-12-09 | 2014-06-10 | 2014-12-10 | $7700.00 | Window Closed / Lapsed |