US5466631A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing semiconductor articles
Assignee: Canon Inc
•
Filing: 1995-02-23
•
Granted: 1995-11-14
•
Expires: 2015-02-23
Abstract
Abstract A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.
Inventors
- 👤 Takeshi Ichikawa
- 👤 Takao Yonehara
- 👤 Masaru Sakamoto
- 👤 Yasuhiro Naruse
- 👤 Jun Nakayama
- 👤 Kenji Yamagata
- 👤 Kiyofumi Sakaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 03:50
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1914; H10W10/011; H10W10/014; H10W10/021; H10W10/17; H10W10/20; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S438/00; Y10S438/96; Y10S438/977
Claims Analysis
Total Claims: 56
Claim 1
Independent Claim
105 words
A method for producing a semiconductor article, comprising, in sequence, the steps of: (i) preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region; (ii) forming unevenness on the surface at the side of said semiconductor layer of said first substrate; (iii) bonding the surface of said first substrate having said unevenness formed thereon to the surface of a second substrate so as to be in contact with each other; and (iv) removing said porous semiconductor such that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.
Claim 2
Independent Claim
105 words
A method for producing a semiconductor article, comprising, in sequence, the steps of: (i) preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region; (ii) forming unevenness on the surface at the side of said semiconductor layer of said first substrate; (iii) bonding the surface of said first substrate having said unevenness formed thereon to the surface of a second substrate so as to be in contact with each other; and (iv) removing said porous semiconductor such that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.
Claim 3
Dependent Claim
44 words
The method according to claim 1, wherein said first substrate is prepared by converting a portion at the surface side of a substrate comprising the semiconductor into the porous region and then forming a monocrystalline semiconductor layer on the surface of said porous region.
Claim 4
Dependent Claim
24 words
The method according to claim 1, wherein said first substrate is prepared by forming a monocrystalline semiconductor layer on a substrate of porous semiconductor.
Claim 5
Dependent Claim
31 words
The method according to claim 1, wherein said first substrate is prepared by converting the portion other than the surface-side portion of a substrate of monocrystalline semiconductor into a porous member.
Claim 6
Dependent Claim
22 words
The method according to claim 1, wherein said first substrate has an insulating layer on the surface side of said semiconductor layer.
Claim 7
Dependent Claim
14 words
The method according to claim 1, wherein said second substrate has an insulating surface.
Claim 8
Dependent Claim
16 words
The method according to claim 1, wherein said second substrate has an insulating film provided thereon.
Claim 9
Dependent Claim
12 words
The method according to claim 1, wherein said second substrate is light-transmissive.
Claim 10
Dependent Claim
20 words
The method according to claim 1, wherein the step of removing said porous semiconductor is carried out by wet etching.
Claim 11
Dependent Claim
24 words
The method according to claim 1, wherein the step of removing said porous semiconductor includes a mechanical polishing step and a wet etching step.
Claim 12
Independent Claim
15 words
The method according to any one of claims 1-10, wherein said semiconductor layer comprises silicon.
Claim 13
Independent Claim
21 words
The method according to any one of claims 1-6 and 8-10, wherein said second substrate is made of quartz or glass.
Claim 14
Independent Claim
33 words
The method according to any one of claims 1-6 and 8-10, wherein said semiconductor layer of said first substrate is made of silicon and said second substrate is made of quartz or glass.
Claim 15
Independent Claim
37 words
The method according to any one of claims 1-7, 9, and 10, wherein said semiconductor layer of said first substrate is made of silicon, and said second substrate has an insulating layer formed on a silicon substrate.
Claim 16
Independent Claim
23 words
The method according to any one of claims 1-10, wherein said porous semiconductor region is formed by anodization using a hydrofluoric acid solution.
Claim 17
Independent Claim
21 words
The method according to any one of claims 1-10, wherein said semiconductor layer is a monocrystalline semiconductor formed by epitaxial growth.
Claim 18
Independent Claim
37 words
The method according to any one of claims 1-10, wherein said semiconductor layer is a monocrystalline semiconductor as epitaxially grown by a method-selected from bias sputtering, molecular beam epitaxy, plasma-assisted CVD, photo-assisted CVD, and liquid phase epitaxy.
Claim 19
Independent Claim
22 words
The method according to any one of claims 1-10, wherein the thickness of said semiconductor layer is not more than 100 μm.
Claim 20
Independent Claim
31 words
The method according to any one of claims 1-10, wherein said unevenness includes a groove formed through said semiconductor layer and through said porous semiconductor region to reach an underlying region.
Claim 21
Independent Claim
58 words
The method according to any one of claims 1-10, wherein said unevenness includes a groove formed through said semiconductor layer and through said porous semiconductor region to reach an underlying region, and the step of removing said porous semiconductor region includes the steps of polishing said underlying region until said groove is reached and then performing wet etching.
Claim 22
Independent Claim
61 words
The method according to any one of claims 1-10, wherein said unevenness includes a groove formed through said semiconductor layer and through said porous semiconductor region to reach an underlying region, and the step of removing said porous semiconductor includes the steps of covering the back surface of said second substrate with an etching preventing film and then performing wet etching.
Claim 23
Independent Claim
31 words
The method according to any one of claims 1-10, wherein said unevenness includes a groove formed through said semiconductor layer to reach at least a portion of said porous semiconductor region.
Claim 24
Independent Claim
27 words
The method according to any one of claims 1-10, wherein said unevenness is formed with an insulating layer formed in a selected pattern on said semiconductor layer.
Claim 25
Independent Claim
53 words
The method according to any one of claims, 1-10, wherein the step of bonding is carried out after steps of providing an insulating layer of a selected pattern on said semiconductor layer, forming said unevenness and then converting the exposed portion of said semiconductor layer thorough said insulating layer into an insulating material.
Claim 26
Independent Claim
23 words
The method according to any one of claims 1-10, wherein said semiconductor layer comprises a plurality of island portions separated from each other.
Claim 27
Independent Claim
23 words
The method according to any one of claims 1-10, further comprising the step of forming a semiconductor element using said transferred semiconductor layer.
Claim 28
Independent Claim
103 words
A method for producing a semiconductor article, comprising the steps of: preparing a substrate having a non-porous semiconductor layer on a porous semiconductor region; bonding the surface at the side of said semiconductor layer to the surface of an insulating substrate so as to be in contact with each other; removing said porous semiconductor region under the state that said semiconductor layer is bonded to said insulating substrate to thereby transfer said semiconductor layer to said insulating substrate from said substrate; separating said transferred semiconductor layer into island regions; and heat treating said semiconductor layer separated into island regions on said insulating substrate.
Claim 29
Independent Claim
103 words
A method for producing a semiconductor article, comprising the steps of: preparing a substrate having a non-porous semiconductor layer on a porous semiconductor region; bonding the surface at the side of said semiconductor layer to the surface of an insulating substrate so as to be in contact with each other; removing said porous semiconductor region under the state that said semiconductor layer is bonded to said insulating substrate to thereby transfer said semiconductor layer to said insulating substrate from said substrate; separating said transferred semiconductor layer into island regions; and heat treating said semiconductor layer separated into island regions on said insulating substrate.
Claim 30
Dependent Claim
25 words
The method according to claim 27, wherein said step of bonding includes a step of heat treatment at a temperature not higher than 600° C.
Claim 31
Dependent Claim
43 words
The method according to claim 27, wherein said substrate is prepared by converting a portion at the surface side of a substrate comprising the semiconductor into the porous region and then forming a monocrystalline semiconductor layer on the surface of said porous region.
Claim 32
Dependent Claim
23 words
The method according to claim 27, wherein said substrate is prepared by forming a monocrystalline semiconductor layer on a substrate of porous semiconductor.
Claim 33
Dependent Claim
30 words
The method according to claim 27, wherein said substrate is prepared by converting the portion other than the surface-side portion of a substrate of monocrystalline semiconductor into the porous region.
Claim 34
Dependent Claim
21 words
The method according to claim 27, wherein said substrate has an insulating layer on the surface side of said semiconductor layer.
Claim 35
Dependent Claim
12 words
The method according to claim 27, wherein said insulating substrate is light-transmissive.
Claim 36
Dependent Claim
20 words
The method according to claim 27, wherein the step of removing said porous semiconductor is carried out by wet etching.
Claim 37
Dependent Claim
24 words
The method according to claim 27, wherein the step of removing said porous semiconductor includes a mechanical polishing step and a wet etching step.
Claim 38
Dependent Claim
27 words
The method according to claim 27, wherein said semiconductor layer of said substrate is made of silicon and said second substrate is made of quartz or glass.
Claim 39
Dependent Claim
19 words
The method according to claim 27, wherein the thickness of said semiconductor layer is not more than 2 μm.
Claim 40
Dependent Claim
19 words
The method according to claim 27, further comprising the step of forming a semiconductor element in said island regions.
Claim 41
Independent Claim
104 words
A method for producing a semiconductor article, comprising the steps of: preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region; separating said semiconductor layer into a plurality of island regions isolated with a dielectric region; bonding the surface at the side of said plurality of island regions of said first substrate to the surface of a second substrate so as to be in contact with each other; removing said porous semiconductor region under the state that said plurality of island regions are bonded to said second substrate to thereby transfer said plurality of island regions onto said second substrate.
Claim 42
Independent Claim
104 words
A method for producing a semiconductor article, comprising the steps of: preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region; separating said semiconductor layer into a plurality of island regions isolated with a dielectric region; bonding the surface at the side of said plurality of island regions of said first substrate to the surface of a second substrate so as to be in contact with each other; removing said porous semiconductor region under the state that said plurality of island regions are bonded to said second substrate to thereby transfer said plurality of island regions onto said second substrate.
Claim 43
Dependent Claim
44 words
The method according to claim 39, wherein said first substrate is prepared by converting a portion at the surface side of a substrate comprising the semiconductor into the porous region and then forming a monocrystalline semiconductor layer on the surface of said porous member.
Claim 44
Dependent Claim
24 words
The method according to claim 39, wherein said first substrate is prepared by forming a monocrystalline semiconductor layer on a substrate of porous semiconductor.
Claim 45
Dependent Claim
31 words
The method according to claim 39, wherein said first substrate is prepared by converting the portion other than the surface-side portion of a substrate of monocrystalline semiconductor into a porous member.
Claim 46
Dependent Claim
22 words
The method according to claim 39, wherein said first substrate has an insulating layer on the surface side of said semiconductor layer.
Claim 47
Dependent Claim
14 words
The method according to claim 39, wherein said second substrate has an insulating surface.
Claim 48
Dependent Claim
16 words
The method according to claim 39, wherein said second substrate has an insulating film provided thereon.
Claim 49
Dependent Claim
12 words
The method according to claim 39, wherein said second substrate is light-transmissive.
Claim 50
Dependent Claim
20 words
The method according to claim 39, wherein the step of removing said porous semiconductor is carried out by wet etching.
Claim 51
Dependent Claim
24 words
The method according to claim 39, wherein the step of removing said porous semiconductor includes a mechanical polishing step and a wet etching step.
Claim 52
Dependent Claim
21 words
The method according to claim 39, further comprising the step of forming a semiconductor element in said plurality of island regions.
Claim 53
Independent Claim
102 words
A method for producing a semiconductor article, comprising the steps of: preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region; bonding the surface at the side of said semiconductor layer of said first substrate to a second substrate so as to be in contact with each other; removing said porous semiconductor region under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer onto said second substrate from said first substrate; and separating said semiconductor layer into a plurality of island regions before or after said step of bonding.
Claim 54
Independent Claim
102 words
A method for producing a semiconductor article, comprising the steps of: preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region; bonding the surface at the side of said semiconductor layer of said first substrate to a second substrate so as to be in contact with each other; removing said porous semiconductor region under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer onto said second substrate from said first substrate; and separating said semiconductor layer into a plurality of island regions before or after said step of bonding.
Claim 55
Dependent Claim
26 words
The method according to claim 28, wherein the temperature in said heat treating step is higher than that in the heat treatment in said bonding step.
Claim 56
Dependent Claim
19 words
The method according to claim 51, wherein the temperature in said heat treating step is 800° C. or higher.
References Cited (Backward Citations)
US3756877A
Cited
US3997381A
Cited
US3962052A
Cited
US4198263A
Cited
JPS5345675A
Cited
US4171242A
Cited
US4177094A
Cited
US4142925A
Cited
JPS5516464A
Cited
US4380865A
Cited
JPS61183940A
Cited
US4806996A
Cited
JPS63237408A
Cited
US4771016A
Cited
US4897362A
Cited
EP0312466A1
Cited
US4878957A
Cited
US4939101A
Cited
US5204282A
Cited
US4962051A
Cited
US4891329A
Cited
JPH02267949A
Cited
JPH03109731A
Cited
US5013681A
Cited
WO1991009420A1
Cited
JPH0479209A
Cited
US5091330A
Cited
EP0499488A2
Cited
US5110748A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-11-13 | 1999-05-15 | 1999-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-13 | 2003-05-15 | 2003-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-13 | 2007-05-15 | 2007-11-14 | $7700.00 | Window Closed / Lapsed |