EP0499488A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
Assignee: Canon Inc
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Filing: 1992-02-14
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Granted: —
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Expires: 2012-02-14
Abstract
Abstract A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.
Inventors
- 👤 Kiyofumi C/O Canon Kabushiki Kaisha Sakaguchi
- 👤 Takao C/O Canon Kabushiki Kaisha Yonehara
- 👤 Nobuhiko C/O Canon Kabushiki Kaisha Sato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 05:40
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P90/12; H10P90/15; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 56
Claim 1
Independent Claim
12 words
A chemical etching solution for porous Si comprising hydrofluoric acid as etchant.
Claim 2
Dependent Claim
18 words
A chemical etching solution for porous Si comprising a mixture of hydrofluoric acid and an alcohol as etchant.
Claim 3
Dependent Claim
18 words
A chemical etching solution for porous Si comprising a mixture of hydrofluoric acid and hydrogen peroxide as etchant.
Claim 4
Dependent Claim
20 words
A chemical etching solution for porous Si comprising a mixture of hydrofluoric acid, an alcohol and hydrogen peroxide as etchant.
Claim 5
Dependent Claim
13 words
A chemical etching solution for porous Si comprising buffered hydrofluoric acid as etchant.
Claim 6
Dependent Claim
19 words
A chemical etching solution for porous Si comprising a mixture of buffered hydrofluoric acid and an alcohol as etchant.
Claim 7
Dependent Claim
19 words
A chemical etching solution for porous Si comprising a mixture of buffered hydrofluoric acid and hydrogen peroxide as etchant.
Claim 8
Dependent Claim
21 words
A chemical etching solution for porous Si comprising a mixture of buffered hydrofluoric acid, an alcohol and hydrogen peroxide as etchant.
Claim 9
Dependent Claim
14 words
A chemical etching method for porous Si, which comprises using hydrofluoric acid as etchant.
Claim 10
Dependent Claim
20 words
A chemical etching method for porous Si, which comprises using a mixture of hydrofluoric acid and an alcohol as etchant.
Claim 11
Dependent Claim
20 words
A chemical etching method for porous Si, which comprises using a mixture of hydrofluoric acid and hydrogen peroxide as etchant.
Claim 12
Dependent Claim
22 words
A chemical etching method for porous Si, which comprises using a mixture of hydrofluoric acid, an alcohol and hydrogen peroxide as etchant.
Claim 13
Dependent Claim
15 words
A chemical etching method for porous Si, which comprises using buffered hydrofluoric acid as etchant.
Claim 14
Dependent Claim
21 words
A chemical etching method for porous Si, which comprises using a mixture of buffered hydrofluoric acid and an alcohol as etchant.
Claim 15
Dependent Claim
21 words
A chemical etching method for porous Si, which comprises using a mixture of buffered hydrofluoric acid and hydrogen peroxide as etchant.
Claim 16
Dependent Claim
23 words
A chemical etching method for porous Si, which comprises using a mixture of buffered hydrofluoric acid, an alcohol and hydrogen peroxide as etchant.
Claim 17
Independent Claim
54 words
A method for preparing a semiconductor member, which comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of said monocrystalline layer; and etching to remove said porous silicon layer by immersing in hydrofluoric acid.
Claim 18
Independent Claim
60 words
A method for preparing a semiconductor member, which comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of said monocrystalline layer; and etching to remove said porous silicon layer by immersing in a mixture of hydrofluoric acid and an alcohol.
Claim 19
Independent Claim
59 words
A method for preparing a semiconductor member, which comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface of an insulating material to the surface of said monocrystalline layer; and etching to remove said porous silicon layer by immersing in a mixture of hydrofluoric acid and hydrogen peroxide.
Claim 20
Independent Claim
62 words
A method for preparing a semiconductor member, which comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of said monocrystalline layer; and etching to remove said porous silicon layer by immersing in a mixture of hydrofluoric acid, an alcohol and hydrogen peroxide.
Claim 21
Independent Claim
55 words
A method for preparing a semiconductor member, which comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of said monocrystalline layer; and etching to remove said porous silicon layer by immersing in buffered hydrofluoric acid.
Claim 22
Independent Claim
61 words
A method for preparing a semiconductor member, which comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of said monocrystalline layer; and etching to remove said porous silicon layer by immersing in a mixture of buffered hydrofluoric acid and an alcohol.
Claim 23
Independent Claim
61 words
A method for preparing a semiconductor member, which comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of said monocrystalline layer; and etching to remove said porous silicon layer by immersing in a mixture of buffered hydrofluoric acid and hydrogen peroxide.
Claim 24
Independent Claim
63 words
A method for preparing a semiconductor member, which comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of said monocrystalline layer; and etching to remove said porous silicon layer by immersing in a mixture of buffered hydrofluoric acid, an alcohol and hydrogen peroxide.
Claim 25
Independent Claim
65 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; bonding a light-transmissive glass substrate to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in hydrofluoric acid.
Claim 26
Independent Claim
72 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the silicon substrate made porous; bonding another silicon substrate having an insulating layer on the surface thereof to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in hydrofluoric acid.
Claim 27
Independent Claim
86 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding a light-transmissive substrate to the surface of said oxide layer; and chemically etching to remove said silicon substrate made porous by immersing in hydrofluoric acid after coating the surfaces other than the surface of said silicon substrate made porous with a protecting material.
Claim 28
Independent Claim
82 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding another silicon substrate having an insulating material on the surface thereof to the surface of said oxide layer on said non-porous silicon monocrystalline layer; and chemically etching to remove said silicon substrate made porous by immersing in hydrofluoric acid.
Claim 29
Independent Claim
71 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; bonding a light-transmissive glass substrate to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of hydrofluoric acid and an alcohol.
Claim 30
Independent Claim
78 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the silicon substrate made porous; bonding another silicon substrate having an insulating layer on the surface thereof to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of hydrofluoric acid and an alcohol.
Claim 31
Independent Claim
92 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding a light-transmissive substrate to the surface of said oxide layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture of hydrofluoric acid and an alcohol after coating the surfaces other than the surface of said silicon substrate made porous with a protecting material.
Claim 32
Independent Claim
88 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding another silicon substrate having an insulating material on the surface thereof to the surface of said oxide layer on said non-porous silicon monocrystalline layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture of hydrofluoric acid and an alcohol.
Claim 33
Independent Claim
71 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; bonding a light-transmissive glass substrate to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of hydrofluoric acid and hydrogen peroxide.
Claim 34
Independent Claim
78 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the silicon substrate made porous; bonding another silicon substrate having an insulating layer on the surface thereof to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of hydrofluoric acid and hydrogen peroxide.
Claim 35
Independent Claim
93 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding a light-transmissive substrate to the surface of said oxide layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture comprising of hydrofluoric acid and hydrogen peroxide after coating the surfaces other than the surface of said silicon substrate made porous with a protecting material.
Claim 36
Independent Claim
88 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding another silicon substrate having an insulating material on the surface thereof to the surface of said oxide layer on said non-porous silicon monocrystalline layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture of hydrofluoric acid and hydrogen peroxide.
Claim 37
Independent Claim
73 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; bonding a light-transmissive glass substrate to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of hydrofluoric acid, an alcohol and hydrogen peroxide.
Claim 38
Independent Claim
80 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the silicon substrate made porous; bonding another silicon substrate having an insulating layer on the surface thereof to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of hydrofluoric acid, an alcohol and hydrogen peroxide.
Claim 39
Independent Claim
94 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding a light-transmissive substrate to the surface of said oxide layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture of hydrofluoric acid, an alcohol and hydrogen peroxide after coating the surfaces other than the surface of said silicon substrate made porous with a protecting material.
Claim 40
Independent Claim
90 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding another silicon substrate having an insulating material on the surface thereof to the surface of said oxide layer on said non-porous silicon monocrystalline layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture of hydrofluoric acid, an alcohol and hydrogen peroxide.
Claim 41
Independent Claim
66 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; bonding a light-transmissive glass substrate to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in buffered hydrofluoric acid.
Claim 42
Independent Claim
73 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the silicon substrate made porous; bonding another silicon substrate having an insulating layer on the surface thereof to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in buffered hydrofluoric acid.
Claim 43
Independent Claim
87 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding a light-transmissive substrate to the surface of said oxide layer; and chemically etching to remove said silicon substrate made porous by immersing in buffered hydrofluoric acid after coating the surfaces other than the surface of said silicon substrate made porous with a protecting material.
Claim 44
Independent Claim
83 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding another silicon substrate having an insulating material on the surface thereof to the surface of said oxide layer on said non-porous silicon monocrystalline layer; and chemically etching to remove said silicon substrate made porous by immersing in buffered hydrofluoric acid.
Claim 45
Independent Claim
72 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; bonding a light-transmissive glass substrate to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of buffered hydrofluoric acid and an alcohol.
Claim 46
Independent Claim
79 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the silicon substrate made porous; bonding another silicon substrate having an insulating layer on the surface thereof to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of buffered hydrofluoric acid and an alcohol.
Claim 47
Independent Claim
93 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding a light-transmissive substrate to the surface of said oxide layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture of buffered hydrofluoric acid and an alcohol after coating the surfaces other than the surface of said silicon substrate made porous with a protecting material.
Claim 48
Independent Claim
89 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding another silicon substrate having an insulating material on the surface thereof to the surface of said oxide layer on said non-porous silicon monocrystalline layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture of buffered hydrofluoric acid and an alcohol.
Claim 49
Independent Claim
72 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; bonding a light-transmissive glass substrate to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of buffered hydrofluoric acid and hydrogen peroxide.
Claim 50
Independent Claim
79 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the silicon substrate made porous; bonding another silicon substrate having an insulating layer on the surface thereof to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of buffered hydrofluoric acid and hydrogen peroxide.
Claim 51
Independent Claim
93 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding a light-transmissive substrate to the surface of said oxide layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture comprising buffered hydrofluoric acid and hydrogen peroxide after coating the surfaces other than the surface of said silicon substrate made porous with a protecting material.
Claim 52
Independent Claim
89 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding another silicon substrate having an insulating material on the surface thereof to the surface of said oxide layer on said non-porous silicon monocrystalline layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture of buffered hydrofluoric acid and hydrogen peroxide.
Claim 53
Independent Claim
74 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; bonding a light-transmissive glass substrate to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of buffered hydrofluoric acid, an alcohol and hydrogen peroxide.
Claim 54
Independent Claim
81 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the silicon substrate made porous; bonding another silicon substrate having an insulating layer on the surface thereof to the surface of said non-porous silicon monocrystalline layer; and selectively etching porous silicon by chemically etching to remove porous silicon by immersing said silicon substrate made porous in a mixture of buffered hydrofluoric acid, an alcohol and hydrogen peroxide.
Claim 55
Independent Claim
95 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding a light-transmissive substrate to the surface of said oxide layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture of buffered hydrofluoric acid, an alcohol and hydrogen peroxide after coating the surfaces other than the surface of said silicon substrate made porous with a protecting material.
Claim 56
Independent Claim
91 words
A method for preparing a semiconductor member, which comprises the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said silicon substrate made porous; forming an oxide layer on the surface of said non-porous silicon monocrystalline layer; bonding another silicon substrate having an insulating material on the surface thereof to the surface of said oxide layer on said non-porous silicon monocrystalline layer; and chemically etching to remove said silicon substrate made porous by immersing in a mixture comprising buffered hydrofluoric acid, an alcohol and hydrogen peroxide.
References Cited (Backward Citations)
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