US4198263A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mask for soft X-rays and method of manufacture
Assignee: Toshiba Corp
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Filing: 1977-03-29
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Granted: 1980-04-15
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Expires: 1997-03-29
Abstract
Abstract A mask for soft X-rays comprising a silicon film which permits the penetration of soft X-rays, a soft X-ray mask pattern deposited on one surface of the silicon film, and a supporting member composed of silicon layers and disposed marginally on the other surface of the silicon film, the silicon film being formed on the supporting member by epitaxial growth or impurity diffusion. A method of making a mask for soft X-rays which comprises the steps of successively forming a first and a second layer on a silicon substrate by epitaxial growth or the like, the first and second layers having different impurity concentrations; forming a soft X-ray mask pattern on the second layer; etching the silicon substrate selectively to remove the silicon substrate except its marginal region; and etching the first layer.
Inventors
- 👤 Takashi Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 07:11
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/22; H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613; H10P50/64; H10P50/642; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
191 words
A method for forming a mask for soft X-ray exposure, comprising the steps of: (a) forming a first silicon layer on a silicon substrate by epitaxial growth or impurity diffusion, the impurity concentration of said first layer being different than said substrate; (b) forming a second silicon layer on said first layer by epitaxial growth or impurity diffusion, the thickness of said second layer permitting penetration of soft X-rays and being less than said first layer and the impurity concentration of said second layer being different than said first layer; (c) forming a mask pattern impenetrable to soft X-rays on said second layer by depositing a film of resist material on said second layer, etching a pattern in said film, plating a soft X-ray masking material on said second layer and removing said resist material pattern; (d) removing said silicon substrate except for its marginal region with an etching solution having an etching rate for said substrate higher than for said first layer; and (e) removing said first layer except for its marginal region with an etching solution having an etching rate for said first layer higher than said second layer.
Claim 2
Independent Claim
191 words
A method for forming a mask for soft X-ray exposure, comprising the steps of: (a) forming a first silicon layer on a silicon substrate by epitaxial growth or impurity diffusion, the impurity concentration of said first layer being different than said substrate; (b) forming a second silicon layer on said first layer by epitaxial growth or impurity diffusion, the thickness of said second layer permitting penetration of soft X-rays and being less than said first layer and the impurity concentration of said second layer being different than said first layer; (c) forming a mask pattern impenetrable to soft X-rays on said second layer by depositing a film of resist material on said second layer, etching a pattern in said film, plating a soft X-ray masking material on said second layer and removing said resist material pattern; (d) removing said silicon substrate except for its marginal region with an etching solution having an etching rate for said substrate higher than for said first layer; and (e) removing said first layer except for its marginal region with an etching solution having an etching rate for said first layer higher than said second layer.
Claim 3
Dependent Claim
69 words
A method as claimed in claim 1 wherein a silicon wafer having an impurity concentration of not greater than 10 18 /CC is used as said silicon substrate, a silicon layer having an impurity concentration of not less than 2×10 19 /CC is formed as said first layer, and a silicon layer having an impurity concentration of not greater than 5×10 15 /CC is formed as said second layer.
Claim 4
Dependent Claim
69 words
A method as claimed in claim 1 wherein a silicon wafer having an impurity concentration of not greater than 10 18 /CC is employed as said silicon substrate, a silicon layer having an impurity concentration of not greater then 5×10 15 /CC is formed as said first layer, and a silicon layer having an impurity concentration of not less than 2×10 19 /CC is formed as said second layer.
Claim 5
Dependent Claim
45 words
A method as claimed in claim 1 further including the step of, subsequently to the formation of said mask pattern, depositing a supporting member on such a region of the mask pattern-bearing surface of said second layer as is not covered by said mask pattern.
Claim 6
Dependent Claim
57 words
A method as claimed in claim 1 wherein the selective etching of said silicon substrate is interrupted at an intermediate stage, the etched surface of said silicon substrate is covered with an etching-resistant protective coating to a width greater than that of said marginal region, and the selective etching of said silicon substrate is carried on again.
Claim 7
Dependent Claim
37 words
A method as claimed in claim 1 wherein the etching of said first layer is carried out after the marginal region of the exposed surface of said first layer has been covered with an etching-resistant protective coating.
Claim 8
Dependent Claim
49 words
A method as claimed in claim 1 wherein the etching of said first layer is carried out after the marginal region of the exposed surface of said first layer and such another region thereof as does not overlap said mask pattern have been covered with an etching-resistant protective coating.
Claim 9
Dependent Claim
35 words
A method as claimed in claim 1 wherein the selective etching of said silicon substrate is carried out after the mask pattern-bearing surface of said second layer has been covered with an etching-resistant protective coating.
Claim 10
Dependent Claim
56 words
A method as claimed in claim 1 wherein the step of forming said mask pattern includes the step of depositing a chrome layer on said second layer to a thickness which substantially permits the penetration of soft X-rays and then forming said resist material pattern and plating said soft X-ray masking material on said chrome layer.
Claim 11
Dependent Claim
14 words
The method as in claim 9 wherein said soft x-ray masking material is gold.
Claim 12
Dependent Claim
14 words
The method as in claim 1 wherein said soft X-ray masking material is gold.
Claim 13
Dependent Claim
27 words
A method as claimed in claim 1 wherein the etching of said silicon substrate is carried out while said silicon substrate is being both rotated and revolved.
Claim 14
Dependent Claim
26 words
A method as claimed in claim 1 wherein the etching of said first layer is carried out while said first layer being both rotated and revolved.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-15 | 1983-10-15 | 1984-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-15 | 1987-10-15 | 1988-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-15 | 1991-10-15 | 1992-04-15 | $7700.00 | Window Closed / Lapsed |