US3853650A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stress sensor diaphragms over recessed substrates
Assignee: Honeywell Inc
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Filing: 1973-02-12
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Granted: 1974-12-10
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Expires: 1993-02-12
Abstract
Abstract A semiconductor layer to serve as a diaphragm is provided over a substrate having recesses therein. The recesses are formed after the semiconductor layer has been provided by differential etching. A convenient semiconductor layer is an epitaxially grown layer in which sensing elements are provided.
Inventors
- 👤 J Hartlaub
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:02
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/50; H10P; H10P50/00; H10P50/69; H10P50/691; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/051; Y10S148/135; Y10S148/159; Y10S438/00; Y10S438/914; Y10S438/924
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
120 words
A METHOD FOR PROVIDING A SEMICONDUCTOR MATERIAL DIAPHRAGM CONSTRAINED BY A BASE, THE METHOD COMPRISING: PROVIDING A RAPID ETCH REGION IN A SUBSTRATE OF A FIRST MATERIAL; PROVIDING A FIRST LAYER OF A SECOND MATERIAL TO BOUND IN PART SAID RAPID ETCH REGION, SAID FIRST LAYER HAVING AN EXPOSED OUTER MAJOR SURFACE OPPOSITE RAPID ETCH REGION WITH SAID SECOND MATERIAL BEING A SEMICONDUCTOR OF A FIRST CONDUCTIVITY TYPE, SAID RAPID ETCH REGION BEING CAPABLE OF BEING ETCHED AWAY AT A SUBSTANTIALLY GREATER RATE THAN BOTH SAID FIRST LAYER AND REMAINING PORTIONS OF SAID SUBSTRATE ADJOINING SAID RAPID ETCH REGION; PROVIDING AN ACCESS TO SAID RAPID ETCH REGION FROM A FIRST MAJOR SURFACE OF SAID SUBSTRATE OPPOSITE SAID FIRST LAYER. AND
Claim 2
Independent Claim
120 words
A METHOD FOR PROVIDING A SEMICONDUCTOR MATERIAL DIAPHRAGM CONSTRAINED BY A BASE, THE METHOD COMPRISING: PROVIDING A RAPID ETCH REGION IN A SUBSTRATE OF A FIRST MATERIAL; PROVIDING A FIRST LAYER OF A SECOND MATERIAL TO BOUND IN PART SAID RAPID ETCH REGION, SAID FIRST LAYER HAVING AN EXPOSED OUTER MAJOR SURFACE OPPOSITE RAPID ETCH REGION WITH SAID SECOND MATERIAL BEING A SEMICONDUCTOR OF A FIRST CONDUCTIVITY TYPE, SAID RAPID ETCH REGION BEING CAPABLE OF BEING ETCHED AWAY AT A SUBSTANTIALLY GREATER RATE THAN BOTH SAID FIRST LAYER AND REMAINING PORTIONS OF SAID SUBSTRATE ADJOINING SAID RAPID ETCH REGION; PROVIDING AN ACCESS TO SAID RAPID ETCH REGION FROM A FIRST MAJOR SURFACE OF SAID SUBSTRATE OPPOSITE SAID FIRST LAYER. AND
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein said providing of said first layer is followed by providing a First impurity in said first layer at said outer major surface to form a first impurity region.
Claim 4
Dependent Claim
34 words
The method of claim 1 wherein said etching within said access differentially is followed by providing a first impurity in said first layer at said outer major surface to form a first impurity region.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein said providing of said first layer is accomplished by growing said first layer epitaxially on said substrate.
Claim 6
Dependent Claim
17 words
The method of claim 2 wherein said first material is a semiconductor of a second conductivity type.
Claim 7
Dependent Claim
59 words
The method of claim 2 wherein said providing of said first impurity is accompanied by: providing an oxide layer over said outer major surface, opening said oxide layer to expose a portion of said first impurity region, and depositing a first metal to provide an interconnection network having an electrical contact to said first impurity region through said opening.
Claim 8
Dependent Claim
23 words
The method of claim 2 wherein said providing of said first layer is accomplished by growing said first layer epitaxially on said substrate.
Claim 9
Dependent Claim
59 words
The method of claim 3 wherein said providing of said first impurity is accompanied by: providing an oxide layer over said outer major surface, opening said oxide layer to expose a portion of said first impurity region, and depositing a first metal to provide an interconnection network having an electrical contact to said first impurity region through said opening.
Claim 10
Dependent Claim
23 words
The method of claim 3 wherein said providing of said first layer is accomplished by growing said first layer epitaxially on said substrate.
Claim 11
Dependent Claim
17 words
The method of claim 4 wherein said first material is a semiconductor of a second conductivity type.
Claim 12
Dependent Claim
35 words
The method of claim 7 wherein said first material is a semiconductor of a second conductivity type and said providing of said rapid etch region is accomplished by diffusing a second impurity into said substrate.
Claim 13
Dependent Claim
22 words
The method of claim 7 wherein said providing of said rapid etch region is accomplished by subjecting said substrate to particle bombardment.
Claim 14
Dependent Claim
17 words
The method of claim 9 wherein said first material is a semiconductor of a second conductivity type.
Claim 15
Dependent Claim
47 words
The method of claim 11 wherein said providing of said access is accomplished by: depositing a second metal on said first major surface, exposing a portion of said first major surface opposite said rapid etch region, and etching chemically through said substrate to said rapid etch region.
Claim 16
Dependent Claim
55 words
The method of claim 11 wherein said providing of said access is accomplished by: providing a second metal on said first major surface, providing a photoresist layer over said second metal, exposing a portion of said first major surface opposite said rapid etch region, and etching chemically through said substrate to said rapid etch region.
Claim 17
Dependent Claim
47 words
The method of claim 11 wherein said providing of said access is accomplished by: providing a photoresist layer on said first major surface, exposing a portion of said first major surface opposite said rapid etch region, and etching chemically through said substrate to said rapid etch region.
Claim 18
Dependent Claim
76 words
The method of claim 11 wherein said providing of said access and said etching within said access differentially are accomplished by: depositing a second metal on said first major surface, exposing a portion of said first major surface opposite said rapid etch region, contacting said second metal to provide a contacted device, placing said contacted device in an etching bath, and applying a voltage between said contacted device and an electrode immersed in said etching bath.
Claim 19
Dependent Claim
84 words
The method of claim 11 wherein said providing of said access and said etching within said access differentially are accomplished by: providing a second metal on said first major surface, providing a photoresist layer over said second metal, exposing a portion of said first major surface opposite said rapid etch regioN, contacting said second metal to provide a contacted device, placing said contacted device in an etching bath, and applying a voltage between said contacted device and an electrode immersed in said etching bath.
Claim 20
Dependent Claim
77 words
The method of claim 11 wherein said providing of said access and said etching within said access differentially are accomplished by: providing a photoresist layer on said first major surface, exposing a portion of said first major surface opposite said rapid etch region, contacting said first major surface to provide a contacted device, placing said contacted device in an etching bath, and applying a voltage between said contacted device and an electrode immersed in said etching bath.
Claim 21
Dependent Claim
48 words
The method of claim 14 wherein said etching within said access differentially is accomplished by: contacting said second metal to provide a contacted device, placing said contacted device in an etching bath, and applying a voltage between said contacted device and an electrode immersed in said etching bath.
Claim 22
Dependent Claim
48 words
The method of claim 15 wherein said etching within said access differentially is accomplished by: contacting said second metal to provide a contacting device, placing said contacted device in an etching bath, and applying a voltage between said contacted device and an electrode immersed in said etching bath.
Claim 23
Dependent Claim
49 words
The method of claim 16 wherein said etching within said access differentially is accomplished by: contacting said first major surface to provide a contacted device, placing said contacted device in an etching bath, and applying a voltage between said contacted device and an electrode immersed in said etching bath.
Claim 24
Dependent Claim
56 words
The method of claim 16 wherein said diffusing of said second impurity is accomplished by diffusing boron with said second conductivity type being p type conductivity, said first material being doped silicon, said first conductivity type being n type conductivity, said first layer being doped silicon, and said outer major surface being in the (100) orientation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-09 | 1978-06-10 | 1978-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-09 | 1982-06-10 | 1982-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-09 | 1986-06-10 | 1986-12-10 | $7700.00 | Window Closed / Lapsed |