← Back to Patent Explorer
US4171242A Expired / Lapsed US ⏱️ 0.0 years remaining

Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass

Assignee: International Business Machines Corp
•
Filing: 1978-03-08
•
Granted: 1979-10-16
•
Expires: 1998-03-08
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A silicon etchant is disclosed composed of an aqueous solution of a fluoride ion and oxygen maintained at a substantially neutral pH. The etchant eliminates the problems of stripping organic photoresists, maintaining silicon/phosphosilicate glass selectively, silicon surface pitting, oxide residues, and insoluble reaction products.

Inventors

  • 👤 Cheng-Yih Liu

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 06:04
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; C; C09; C09K; C09K13/00; C09K13/04; C09K13/08; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P50/20; H10P50/28; H10P50/282; H10P50/283

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 60 words
A method for preferentially etching a silicon workpiece in the presence of a phosphosilicate glass structure, comprising the steps of: applying to the surface of said silicon workpiece in the presence of said phosphosilicate glass structure, an aqueous solution of fluoride ions and oxygen atoms produced by an oxygen atom donor, maintained at a pH of between 6 and 8.2.
Claim 2
Independent Claim 60 words
A method for preferentially etching a silicon workpiece in the presence of a phosphosilicate glass structure, comprising the steps of: applying to the surface of said silicon workpiece in the presence of said phosphosilicate glass structure, an aqueous solution of fluoride ions and oxygen atoms produced by an oxygen atom donor, maintained at a pH of between 6 and 8.2.
Claim 3
Dependent Claim 45 words
The method of claim 1, wherein fluoride ions are in the form of a quaternary ammonium hydrofluoride compound having the generalized formula R 4 NH y F y-1 where y equals 0 or 1 and R can be an organic radical or a hydrogen radical.
Claim 4
Dependent Claim 33 words
The method of claim 1, wherein said fluoride ion compound comprises: a quaternary ammonium fluoride of the general description R 4 NF where R can be an organic radical or a hydrogen radical.
Claim 5
Dependent Claim 14 words
The method of claim 1, wherein said fluoride ion containing compound is hydrofluoric acid.
Claim 6
Dependent Claim 34 words
The method of claim 1, wherein said fluoride ion containing compound is a fluorine salt of the general description A p F q where p and q are integers and A is a cation.
Claim 7
Dependent Claim 14 words
The method of claim 1, wherein said oxygen atoms are produced by hydrogen peroxide.
Claim 8
Dependent Claim 16 words
The method of claim 1, wherein said oxygen atoms are derived from gaseous oxygen or ozone.
Claim 9
Dependent Claim 141 words
The method of claim 1, wherein said oxygen atoms are derived from oxygen containing compounds selected from the group consisting of: H 2 bo 3 - , ch 3 coo - , h 2 aso 4 - , hasO 4 2- , AsO 4 3- , NO 2 - , SO 3 2- , H 2 PO 4 - , HPO 4 2- , PO 4 3- , SO 4 2- , CO 3 2- , HCO 3 - , HCOO - , ClO 4 - , OCl - , C 6 H 5 COO - , MnO 4 - , Cr 2 O 7 - , IO 3 - , BrO 3 - , H 2 -citrate - , H-citrate 2- , citrate 3- , oxalate 2- , tartrate 2- , malonate 2- , succinate 2- , phthalate 2- .
Claim 10
Dependent Claim 29 words
The method of claim 1, wherein a buffering agent is added to said solution to control the pH of the etching solution between a value of 6 and 8.2.
Claim 11
Dependent Claim 13 words
The method of claim 9, wherein said buffering agent is ammonium hydrogen phosphate.
Claim 12
Dependent Claim 44 words
The method of claim 1, wherein the relative proportion of the constituents are substantially one part by volume of 40 percent by weight concentrated ammonium fluoride, one part by volume of 30 percent by weight hydrogen peroxide, and one part by volume of water.
Claim 13
Dependent Claim 27 words
The method of claim 11, wherein monobasic ammonium phosphate is added to the solution to reduce the small pH value and enhance the etching rate of silicon.
Claim 14
Dependent Claim 76 words
The method of claim 12, wherein the relative proportion of the constituents is one part by volume of 40 percent by weight concentrated ammonium fluoride, one part by volume of 30 percent by weight hydrogen peroxide, and one half part by volume of a solution consisting of X percent by volume of an aqueous solution of 23 grams of monobasic ammonium phosphate per 100 ml of water and Y percent by volume of water, where X+Y-100.
Claim 15
Dependent Claim 19 words
The method of claim 9, wherein said buffering agent is a solution of ammonium hydrogen phosphate and ammonium hydroxide.

References Cited (Backward Citations)

US2847287A Cited
US3041258A Cited
US3194703A Cited
US3434896A Cited
US3497407A Cited
US3930870A Cited
US4052253A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1982-10-15 1983-04-16 1983-10-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1986-10-15 1987-04-16 1987-10-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1990-10-15 1991-04-16 1991-10-16 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag