US3041258A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of etching and etching solution for use therewith
Assignee: Individual
•
Filing: 1960-06-24
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Granted: 1962-06-26
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Expires: 1980-06-24
Abstract
No abstract record available.
Inventors
- 👤 Thomas V Sikina
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:36
CPC Classifications
C; C25; C25F; C25F3/00; C25F3/02; C25F3/12
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
140 words
A METHOD OF PRODUCING ETCHED CAVITIES IN PRESELECTED SURFACE AREAS OF A SILICON SEMICONDUCTOR MATERIAL COMPRISING THE STEPS OF IMPINGING AN ELECTROLYTIC ETCHANT SOLUTION AGAINST SAID PRESELECTED SURFACE AREAS IN THE FORM OF A JET STREAM, SAID ETCHANT SOLUTION CONSISTING ESSENTIALLY OF THE FOLLOWING INGREDIENTS, PER LITER OF WATER, SODIUM FLUORIDE 8.4 GMS., AMMONIUM BIFLUORIDE 4.0 GMS., SODIUM FERROCYANIDE 2.0 GMS., HYDROFLUORIC ACID SUFFICIENT TO ADJUST THE PH THEREOF TO 3.5 APPLYING AN ELECTRIC CURRENT THROUGH SAID JET STREAM IN CONDUCT WITH SAID PRESELECTED SURFACE AREAS AT A CURRENT DENSITY OF FROM ABOUT 75 TO 130 AMPERS PER SQUARE INCH IN ORDER TO ELECTROLYTICALLY ETCH SAID SURFACE AREAS, CONTINUING SAID ELECTROLYTIC ETCHING ACTION FOR A PERIOD OF TIME SUFFICIENT TO PRODUCE PREDETERMINED DIMENSION IN SAID ETCHED AREAS, TERMINATING SAID ETCHING ACTION ABD REMOVING SAID ETCHING SOLUTION FROM SAID SURFACE AREAS.
Claim 2
Independent Claim
140 words
A METHOD OF PRODUCING ETCHED CAVITIES IN PRESELECTED SURFACE AREAS OF A SILICON SEMICONDUCTOR MATERIAL COMPRISING THE STEPS OF IMPINGING AN ELECTROLYTIC ETCHANT SOLUTION AGAINST SAID PRESELECTED SURFACE AREAS IN THE FORM OF A JET STREAM, SAID ETCHANT SOLUTION CONSISTING ESSENTIALLY OF THE FOLLOWING INGREDIENTS, PER LITER OF WATER, SODIUM FLUORIDE 8.4 GMS., AMMONIUM BIFLUORIDE 4.0 GMS., SODIUM FERROCYANIDE 2.0 GMS., HYDROFLUORIC ACID SUFFICIENT TO ADJUST THE PH THEREOF TO 3.5 APPLYING AN ELECTRIC CURRENT THROUGH SAID JET STREAM IN CONDUCT WITH SAID PRESELECTED SURFACE AREAS AT A CURRENT DENSITY OF FROM ABOUT 75 TO 130 AMPERS PER SQUARE INCH IN ORDER TO ELECTROLYTICALLY ETCH SAID SURFACE AREAS, CONTINUING SAID ELECTROLYTIC ETCHING ACTION FOR A PERIOD OF TIME SUFFICIENT TO PRODUCE PREDETERMINED DIMENSION IN SAID ETCHED AREAS, TERMINATING SAID ETCHING ACTION ABD REMOVING SAID ETCHING SOLUTION FROM SAID SURFACE AREAS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-06-25 | 1965-12-25 | 1966-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-06-25 | 1969-12-25 | 1970-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-06-25 | 1973-12-25 | 1974-06-26 | $7700.00 | Window Closed / Lapsed |