US6184044B1
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US
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Thin film capacitor including perovskite-type oxide layers having columnar structure and granular structure
Assignee: Renesas Electronics Corp
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Filing: 1998-12-10
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Granted: 2001-02-06
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Expires: 2018-12-10
Abstract
Abstract The present invention relates to a thin film capacitor that may be used as a stacked capacitor in a memory cell. In a thin film capacitor including a high dielectric constant layer sandwiched by two electrode layers, the high dielectric constant layer includes at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure.
Inventors
- 👤 Shuji Sone
- 👤 Yoshitake Kato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6544
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
46 words
A thin film capacitor comprising: two electrode layers; and a high dielectric constant layer, sandwiched by said electrode layers, said high dielectric constant layer comprising at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure.
Claim 2
Dependent Claim
46 words
A thin film capacitor comprising: two electrode layers; and a high dielectric constant layer, sandwiched by said electrode layers, said high dielectric constant layer comprising at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure.
Claim 3
Dependent Claim
53 words
The capacitor as set forth in claim 1 , wherein said high dielectric constant layer is made of: A m B n O 3 where A includes at least one of metals belonging to II-group or Pb; B includes at least one metal belonging to IV-group; and m and n are positive values.
Claim 4
Dependent Claim
34 words
The capacitor as set forth in claim 2 , wherein a ratio m/n in A m B n O 3 of said perovskite-type oxide layer having said granular structure is about 1.1 to 1.5.
Claim 5
Dependent Claim
51 words
The capacitor as set forth in claim 3 , wherein a ratio m/n in A m B n O 3 of said perovskite-type oxide layer having said columnar structure is smaller than the ratio m/n in A m B n O 3 of said perovskite-type oxide layer having said granular structure.
Claim 6
Dependent Claim
69 words
A thin film capacitor comprising: two electrode layers; and a high dielectric constant layer, sandwiched by said electrode layers, said high dielectric constant layer comprising at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure, said high dielectric constant layer is made of (Ba, Sr) m Ti n O 3 , where m and n are positive values.
Claim 7
Dependent Claim
69 words
A thin film capacitor comprising: two electrode layers; and a high dielectric constant layer, sandwiched by said electrode layers, said high dielectric constant layer comprising at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure, said high dielectric constant layer is made of (Ba, Sr) m Ti n O 3 , where m and n are positive values.
Claim 8
Dependent Claim
34 words
The capacitor as set forth in claim 5 wherein a ratio m/n in (Ba, Sr) m Ti n O 3 of said perovskite-type oxide layer having said granular structure is about 1.1 to 1.5.
Claim 9
Dependent Claim
53 words
The capacitor as set forth in claim 6 , wherein a ratio m/n in (Ba, Sr) m Ti n O 3 of said perovskite-type oxide layer having said columnar structure is smaller than the ratio m/n in (Ba, Sr) m Ti n O 3 of said perovskite-type oxide layer having said granular structure.
Claim 10
Dependent Claim
27 words
The capacitor as set forth in claim 5 , wherein a ratio of Ba/(Ba+Sr) in (Ba, Sr) m Ti n O 3 is less than about 0.5.
Claim 11
Dependent Claim
108 words
A thin film capacitor comprising: a monocrystalline silicon substrate; an insulating layer formed on said monocrystalline silicon substrate, a contact hole being perforated in said insulating layer; a polycrystalline silicon plug buried in said contact hole of said insulating layer; a barrier layer formed on said polycrystalline silicon plug; a lower electrode layer formed on said barrier layer; a high dielectric constant layer, formed on said lower electrode layer, said high dielectric constant layer comprising at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure; and an upper electrode layer formed on said high dielectric constant layer.
Claim 12
Dependent Claim
108 words
A thin film capacitor comprising: a monocrystalline silicon substrate; an insulating layer formed on said monocrystalline silicon substrate, a contact hole being perforated in said insulating layer; a polycrystalline silicon plug buried in said contact hole of said insulating layer; a barrier layer formed on said polycrystalline silicon plug; a lower electrode layer formed on said barrier layer; a high dielectric constant layer, formed on said lower electrode layer, said high dielectric constant layer comprising at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure; and an upper electrode layer formed on said high dielectric constant layer.
Claim 13
Dependent Claim
53 words
The capacitor as set forth in claim 9 , wherein said high dielectric constant layer is made of: A m B n O 3 where A includes at least one of metals belonging to II-group or Pb; B includes at least one metal belonging to IV-group; and m and n are positive values.
Claim 14
Dependent Claim
34 words
The capacitor as set forth in claim 10 , wherein a ratio m/n in A m B n O 3 of said perovskite-type oxide layer having said granular structure is about 1.1 to 1.5.
Claim 15
Dependent Claim
51 words
The capacitor as set forth in claim 11 , wherein a ratio m/n in A m B n O 3 of said perovskite-type oxide layer having said columnar structure is smaller than the ratio m/n in A m B n O 3 of said perovskite-type oxide layer having said granular structure.
Claim 16
Dependent Claim
131 words
A thin film capacitor comprising: a monocrystalline silicon substrate; an insulating layer formed on said monocrystalline silicon substrate, a contact hole being perforated in said insulating layer; a polycrystalline silicon plug buried in said contact hole of said insulating layer; a barrier layer formed on said polycrystalline silicon plug; a lower electrode layer formed on said barrier layer; a high dielectric constant layer, formed on said lower electrode layer, said high dielectric constant layer comprising at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure; and an upper electrode layer formed on said high dielectric constant layer, said high dielectric constant layer is made of (Ba, Sr) m Ti n O 3 , where m and n are positive values.
Claim 17
Dependent Claim
131 words
A thin film capacitor comprising: a monocrystalline silicon substrate; an insulating layer formed on said monocrystalline silicon substrate, a contact hole being perforated in said insulating layer; a polycrystalline silicon plug buried in said contact hole of said insulating layer; a barrier layer formed on said polycrystalline silicon plug; a lower electrode layer formed on said barrier layer; a high dielectric constant layer, formed on said lower electrode layer, said high dielectric constant layer comprising at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure; and an upper electrode layer formed on said high dielectric constant layer, said high dielectric constant layer is made of (Ba, Sr) m Ti n O 3 , where m and n are positive values.
Claim 18
Dependent Claim
35 words
The capacitor as set forth in claim 13 , wherein a ratio m/n in (Ba, Sr) m Ti n O 3 of said perovskite-type oxide layer having said granular structure is about 1.1 to 1.5.
Claim 19
Dependent Claim
53 words
The capacitor as set forth in claim 14 , wherein a ratio m/n in (Ba, Sr) m Ti n O 3 of said perovskite-type oxide layer having said columnar structure is smaller than the ratio m/n in (Ba, Sr) m Ti n O 3 of said perovskite-type oxide layer having said granular structure.
Claim 20
Dependent Claim
27 words
The capacitor as set forth in claim 13 , wherein a ratio of Ba/(Ba+Sr) in (Ba, Sr) m Ti n O 3 is less than about 0.5.
Claim 21
Independent Claim
130 words
A method for manufacturing a thin film capacitor including two electrode layers and a high dielectric constant layer, sandwiched by said electrode layers, said high dielectric constant layer comprising at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure, comprising the steps of: forming an amorphous A m B n O 3 layer; and annealing said amorphous A m B n O 3 layer in a nitrogen atmosphere to crystallize said amorphous A m B n O 3 layer, thus forming said perovskite-type oxide layer having said granular structure, wherein A includes at least one of metals belonging to II-group or Pb; B includes at least one of metals belonging to IV-group; and m and n are positive values.
Claim 22
Independent Claim
130 words
A method for manufacturing a thin film capacitor including two electrode layers and a high dielectric constant layer, sandwiched by said electrode layers, said high dielectric constant layer comprising at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure, comprising the steps of: forming an amorphous A m B n O 3 layer; and annealing said amorphous A m B n O 3 layer in a nitrogen atmosphere to crystallize said amorphous A m B n O 3 layer, thus forming said perovskite-type oxide layer having said granular structure, wherein A includes at least one of metals belonging to II-group or Pb; B includes at least one of metals belonging to IV-group; and m and n are positive values.
Claim 23
Dependent Claim
33 words
The method as set forth in claim 17 , wherein said amorphous A m B n O 3 layer forming step is carried out by an electron cyclotron resonance chemical vapor deposition process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-02-06 | 2004-08-07 | 2005-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-02-06 | 2008-08-07 | 2009-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-02-06 | 2012-08-07 | 2013-02-06 | $7700.00 | Window Closed / Lapsed |