US5986301A
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Thin film capacitor with electrodes having a perovskite structure and a metallic conductivity
Assignee: Toshiba Corp
•
Filing: 1997-05-19
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Granted: 1999-11-16
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Expires: 2017-05-19
Abstract
Abstract A thin film capacitor comprises a dielectric thin film having a perovskite structure sandwiched between top and bottom electrodes. At least one of the top and bottom electrodes is made of a conductive oxide material having a perovskite structure represented with a general formula of ABO3 in which A represents A-site elements composed of at least two of alkaline-earth and rare earth metals, and B represents B-site elements composed of at least one of transition metals. The capacitors involve a small leakage current, occupy a small area, and provide large capacitance. Accordingly, the capacitors realize a high integration semiconductor memory such as a DRAM of gigabit order.
Inventors
- 👤 Noburu Fukushima
- 👤 Takashi Kawakubo
- 👤 Tatsuo Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:24
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/201; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10B; H10B53/00; H10B53/30; H10D1/692; H10D1/696; H10B12/00; H10B12/30; H10B12/31; H10B12/37
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
100 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprising an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material consists of A 1 B 1 O 3 , in which A 1 represents Ca and at least one element of rare-earth elements other than La, and B, consisting of at least one element of Fe, Mn, Cr, and Ru.
Claim 2
Dependent Claim
100 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprising an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material consists of A 1 B 1 O 3 , in which A 1 represents Ca and at least one element of rare-earth elements other than La, and B, consisting of at least one element of Fe, Mn, Cr, and Ru.
Claim 3
Dependent Claim
33 words
A thin film capacitor as claimed in claim 1, wherein said A 1 is represented by AE 1-x RE, (0.1≦x≦0.95), in which AE represents Ca and RE represents rare-earth elements other than La.
Claim 4
Dependent Claim
81 words
A thin film capacitor comprising: (a) a TiN barrier metal layer; (b) a first electrode formed on the TiN barrier metal layer; (c) a second electrode; and (d) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprising an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material is Sr 1-x Ba x RuO 3 (0.1≦x≦0.6).
Claim 5
Dependent Claim
81 words
A thin film capacitor comprising: (a) a TiN barrier metal layer; (b) a first electrode formed on the TiN barrier metal layer; (c) a second electrode; and (d) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprising an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material is Sr 1-x Ba x RuO 3 (0.1≦x≦0.6).
Claim 6
Dependent Claim
23 words
A thin film capacitor as claimed in claim 1, wherein said dielectric thin film comprises Sr 1-x Ba x TiO 3 (0≦x≦1) .
Claim 7
Dependent Claim
20 words
A thin film capacitor as claimed in claim 1, wherein said thin film capacitor is formed on a semiconductor substrate.
Claim 8
Dependent Claim
34 words
A semiconductor device comprising a transistor formed on a substrate and said thin film capacitor according to claim 1, the thin film capacitor is formed on the same substrate and connected to the transistor.
Claim 9
Dependent Claim
119 words
A semiconductor memory device comprising: a) a substrate; b) a semiconductor active region formed at the surface of the substrate; c) first and second main electrode regions separately formed from each other at the surface of the semiconductor active region; d) a gate insulation film formed on the surface of the active region between the first and second main electrode regions; e) a gate electrode formed on the surface of the gate insulation film; f) a word line connected to the gate electrode; g) a bit line connected to the first main electrode region; and h) a storage capacitor connected to the second main electrode region, wherein the storage capacitor comprises said thin film capacitor according to claim 1.
Claim 10
Dependent Claim
133 words
A semiconductor memory device comprising: a) a semiconductor substrate of a first conductivity type; b) a semiconductor region of a second conductivity type formed at the surface of the substrate; c) first and second main electrode regions of the first conductivity type separately formed from each other at the surface of the semiconductor region; d) a gate insulation film formed on the surface of the semiconductor region between the first and second main electrode regions; e) a gate electrode formed on the surface of the gate insulation film; f) a word line connected to the gate electrode; g) a bit line connected to the first main electrode region; and h) a storage capacitor connected to the second main electrode region, wherein the storage capacitor comprises said thin film capacitor according to claim 1.
Claim 11
Dependent Claim
124 words
A semiconductor memory device comprising: a) an insulation layer formed on a support substrate; b) a channel region formed at the top of the insulation layer; c) first and second main electrode regions separately formed from each other at the surface of the channel region; d) a gate insulation film formed on the surface of the channel region between the first and second main electrode regions; e) a gate electrode formed on the surface of the gate insulation film; f) a word line connected to the gate electrode; g) a bit line connected to the first main electrode region; and h) a storage capacitor connected to the second main electrode region, wherein the storage capacitor comprises said thin film capacitor according to claim 1.
Claim 12
Dependent Claim
33 words
A semiconductor memory device as claimed in claim 7, wherein the first electrode is in contact with the second main electrode region through an electrode region formed on the second main electrode region.
Claim 13
Dependent Claim
19 words
A semiconductor memory device as claimed in claim 10, wherein the second electrode is connected to a plate electrode.
Claim 14
Dependent Claim
110 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprising an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein a surface of the electric conductive oxide material facing to the dielectric thin film consists of A 1 B 1 O 3 , in which A 1 represents Ca and at least one element of rare-earth elements other than La, and B 1 consists of at least one element of Fe, Mn, Cr, and Ru.
Claim 15
Dependent Claim
110 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprising an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein a surface of the electric conductive oxide material facing to the dielectric thin film consists of A 1 B 1 O 3 , in which A 1 represents Ca and at least one element of rare-earth elements other than La, and B 1 consists of at least one element of Fe, Mn, Cr, and Ru.
Claim 16
Dependent Claim
25 words
A thin film capacitor as claimed in claim 12, wherein said dielectric thin film is formed on the surface of said electric conductive oxide material.
Claim 17
Dependent Claim
94 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material consists of A 2 CoO 3 , in which A 2 comprises at least one element of alkaline-earth elements and at least one element selected from the group of Nd, Sm, Pr and Eu.
Claim 18
Dependent Claim
94 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material consists of A 2 CoO 3 , in which A 2 comprises at least one element of alkaline-earth elements and at least one element selected from the group of Nd, Sm, Pr and Eu.
Claim 19
Dependent Claim
23 words
A thin film capacitor as claimed in claim 14, wherein said A 2 CoO 3 comprises Nd 1-x Sr x CoO 3 (0.05≦x≦0.5).
Claim 20
Dependent Claim
76 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material consists of W 1-x Re x O 3- δ (0<x<1), in which δ represents oxygen deficiency.
Claim 21
Dependent Claim
76 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material consists of W 1-x Re x O 3- δ (0<x<1), in which δ represents oxygen deficiency.
Claim 22
Dependent Claim
17 words
A thin film capacitor as claimed in claim 16, wherein said δ is about 0.1 or less.
Claim 23
Dependent Claim
78 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises A 3 NiO 3 , in which A 3 comprises at least one element of rare-earth elements.
Claim 24
Dependent Claim
78 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises A 3 NiO 3 , in which A 3 comprises at least one element of rare-earth elements.
Claim 25
Dependent Claim
147 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein a surface of the electric conductive oxide material facing to the dielectric thin film comprises at least one material selected from the group consisting of: i) A 2 CoO 3 , in which A 2 comprises at least one element of alkaline-earth elements and at least one element selected from the group of Nd, Sm, Pr and Eu; ii) A 3 NiO 3 , in which A 3 comprises at least one element of rare-earth elements; and iii) W 1-x Re x O 3- δ (0<x<1), in which δ represents oxygen deficiency.
Claim 26
Dependent Claim
147 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein a surface of the electric conductive oxide material facing to the dielectric thin film comprises at least one material selected from the group consisting of: i) A 2 CoO 3 , in which A 2 comprises at least one element of alkaline-earth elements and at least one element selected from the group of Nd, Sm, Pr and Eu; ii) A 3 NiO 3 , in which A 3 comprises at least one element of rare-earth elements; and iii) W 1-x Re x O 3- δ (0<x<1), in which δ represents oxygen deficiency.
Claim 27
Dependent Claim
97 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x TiO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, RE consists of at least one element of rare-earth elements, and O having a substantially stoichiometric composition, without intentionally introducing oxygen deficiency.
Claim 28
Dependent Claim
97 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x TiO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, RE consists of at least one element of rare-earth elements, and O having a substantially stoichiometric composition, without intentionally introducing oxygen deficiency.
Claim 29
Dependent Claim
86 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x CrO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, and RE consists of at least one element of rare-earth elements.
Claim 30
Dependent Claim
86 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x CrO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, and RE consists of at least one element of rare-earth elements.
Claim 31
Dependent Claim
86 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x R x MnO 3 (0.1≦x≦0.95), in which AE representing Sr or Ba, and RE consists of at least one element of rare-earth elements.
Claim 32
Dependent Claim
86 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x R x MnO 3 (0.1≦x≦0.95), in which AE representing Sr or Ba, and RE consists of at least one element of rare-earth elements.
Claim 33
Dependent Claim
86 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x FeO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, and RE consists of at least one element of rare-earth elements.
Claim 34
Dependent Claim
86 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x FeO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, and RE consists of at least one element of rare-earth elements.
Claim 35
Dependent Claim
89 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x CoO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, and RE consists of at least one element of rare-earth element other than La.
Claim 36
Dependent Claim
89 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x CoO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, and RE consists of at least one element of rare-earth element other than La.
Claim 37
Dependent Claim
89 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, wherein at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, and wherein the electric conductive oxide material is Sr 1-x Ba x RuO 3 (0<x<1), in which at least one of Sr and Ba is replaced by at least one of La and Nd.
Claim 38
Dependent Claim
89 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, wherein at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, and wherein the electric conductive oxide material is Sr 1-x Ba x RuO 3 (0<x<1), in which at least one of Sr and Ba is replaced by at least one of La and Nd.
Claim 39
Dependent Claim
87 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a perovskite high-dielectric-constant thin film not showing ferroelectric characteristics, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x CoO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, and RE consists of at least one element of rare-earth element.
Claim 40
Dependent Claim
87 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a perovskite high-dielectric-constant thin film not showing ferroelectric characteristics, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x CoO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, and RE consists of at least one element of rare-earth element.
Claim 41
Dependent Claim
86 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x CoO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, and RE consists of at least two elements of rare-earth elements.
Claim 42
Dependent Claim
86 words
A thin film capacitor comprising: (a) a first electrode; (b) a second electrode; and (c) a dielectric thin film having a perovskite structure, sandwiched between the first and second electrodes, at least one of the first and second electrodes comprises an electric conductive oxide material having a perovskite structure and showing a metallic conductivity, wherein the electric conductive oxide material comprises AE 1-x RE x CoO 3 (0.1≦x≦0.95), in which AE represents Sr or Ba, and RE consists of at least two elements of rare-earth elements.
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